Substrate processing method

Patent metadata

Field	Value
Publication number	US-12546000-B2
Application number	US-202418913070-A
Country	US
Kind code	B2
Filing date	Oct 11, 2024
Priority date	Oct 16, 2023
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

Provided is a method of forming a conformal film on a recess of a substrate in a reaction chamber by repeating a cycle comprising forming a first film comprising supplying a silicon source and a reactant and applying a first power from a power supply unit to the reaction chamber while supplying the silicon source and the reactant, treating the first film by applying a second power from the power supply unit to the reaction chamber while supplying the reactant, wherein the first power is applied in a pulsed mode, wherein the power supply unit comprises a matching network comprising electronically variable capacitors.

First claim

The invention claimed is:

1 . A method of forming a film comprising:
loading a substrate comprising a recess into a reaction chamber, wherein a gas supply unit is connected to the reaction chamber; forming a first film on the substrate by supplying a silicon source from a source vessel and a reactant to the substrate simultaneously through the gas supply unit while applying a first power from a power supply unit to the reaction chamber; and treating the first film by applying a second power from the power supply unit to the reaction chamber while supplying the reactant;
wherein forming the first film and treating the first film are repeated a plurality of times;
wherein the power supply unit comprises a matching network comprising a plurality of electronically variable discrete capacitors to match an impedance between the power supply unit and the reaction chamber; and
wherein the second power is greater than the first power.

2 . The method of claim 1 , wherein the silicon source is supplied for 0.1 seconds or less.

3 . The method of claim 1 , wherein a matching time between the power supply unit and the reaction chamber is 5 milliseconds or less, while supplying the first power and supplying the second power.

4 . The method of claim 1 , further comprising purging the reaction chamber after forming the first film and before treating the first film.

5 . The method of claim 4 , wherein the reaction chamber is purged for 0.2 seconds or less.

6 . The method of claim 1 , wherein the first power is a high frequency power of between about 20 W and about 500 W.

7 . The method of claim 1 , wherein the first power is applied in a pulsed mode.

8 . The method of claim 7 , wherein a duty ratio of the first power is between about 5% and about 50%.

9 . The method of claim 8 , wherein a duty ratio of the first power is between about 10% and about 30%.

10 . The method of claim 7 , wherein a pulsing frequency of the first power is between about 100 Hz and about 3,000 Hz.

11 . The method of claim 10 , wherein a pulsing frequency of the first power is between about 300 Hz and about 1,000 Hz.

12 . The method of claim 1 , wherein the first power is applied for 0.1 seconds or less.

13 . The method of claim 1 , wherein the second power is applied in a continuous mode in dual frequencies.

14 . The method of claim 13 , wherein the second power comprises a high frequency power and a low frequency power.

15 . The method of claim 14 , wherein the high frequency power is between about 1,000 W and about 2,000 W.

16 . The method of claim 14 , wherein the low frequency power is between about 100 W and about 800 W.

17 . The method of claim 1 , wherein the second power is applied for 0.2 seconds or less.

18 . The method of claim 1 , wherein the source vessel is maintained at 50° C. or less.

19 . The method of claim 1 , wherein a thickness of the gas supply unit is 10 mm or less.

20 . The method of claim 1 , further comprising forming a second film on the first film by repeating a cycle comprising:
supplying the silicon source to the reaction chamber; and applying a third power to the reaction chamber to form the second film, wherein the reactant is supplied throughout the cycle.

21 . The method of claim 20 , wherein forming the first film and forming the second film comprise a super cycle, wherein the super cycle is repeated a plurality of times.

22 . The method of claim 20 , wherein the first film is thicker in an upper portion of the recess and the second film formed on the first film is thicker in a lower portion of the recess, wherein the film comprising the first film and the second film is conformal from the upper portion to the lower portion of the recess.

23 . The method of claim 20 , wherein the third power comprises a high frequency power and a low frequency power.

24 . The method of claim 23 , wherein the high frequency power is between about 500 W and about 1,500 W.

25 . The method of claim 23 , wherein the low frequency power is between about 500 W and about 1,500 W.

26 . The method of claim 20 , wherein the first film and the second film comprise at least one of silicon oxide, silicon carbon oxide, silicon nitride, silicon carbon nitride, silicon carbon oxynitride, or a combination thereof.

27 . The method of claim 20 , wherein the silicon source comprises at least one of: TSA, (SiH 3 ) 3 N; DSO, (SiH 3 ) 2 ; DSMA, (SiH 3 ) 2 NMe; DSEA, (SiH 3 ) 2 NEt; DSIPA, (SiH 3 ) 2 N(iPr); DSTBA, (SiH 3 ) 2 N(tBu); DEAS, SiH 3 NEt 2 ; DTBAS, SiH 3 N(tBu) 2 ; BDEAS, SiH 2 (NEt 2 ) 2 ; BDMAS, SiH 2 (NMe 2 ) 2 ; BTBAS, SiH 2 (NHtBu) 2 ; BITS, SiH 2 (NHSiMe 3 ) 2 ; DIPAS, SiH 3 N(iPr) 2 ; TEOS, Si(OEt) 4 ; SiCl 4 ; HCD, Si 2 Cl 6 ; 3DMAS, SiH(N(Me) 2 ) 3 ; BEMAS, SiH 2 [N(Et)(Me)] 2 ; AHEAD, Si 2 (NHEt) 6 ; TEAS, Si(NHEt) 4 ; Si 3 H 8 ; DCS, SiH 2 Cl 2 ; SiHI 3 ; SiH 2 I 2 ; or a mixture thereof.

28 . The method of claim 20 , wherein the reactant comprises at least one of O 2 , O 3 , CO 2 , H 2 O, NO 2 , N 2 O, N 2 , NH 3 , NH 4 , N 2 H 2 , N 2 H 4 , radicals thereof; or a mixture thereof.

Assignees

• Asm Ip Holding Bv

Inventors

• Chun SeungJu
• Han Seongmin

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title