Systems and methods for power module for inverter for electric vehicle

Patent metadata

Field	Value
Publication number	US-12537442-B2
Application number	US-202318344347-A
Country	US
Kind code	B2
Filing date	Jun 29, 2023
Priority date	Sep 28, 2022
Publication date	Jan 27, 2026
Grant date	Jan 27, 2026

Abstract

A system includes: an inverter configured to convert DC power to AC power, wherein the inverter includes: a power module including: a first substrate, a second substrate including a source plane and a gate plane separated from the source plane by a full trench, the source plane including a step trench, and the gate plane including an electrical connection through the second substrate to a gate input connection of the power module, a semiconductor die disposed between the first substrate and the second substrate, the step trench formed in a portion of the source plane corresponding to an edge of the semiconductor die, and the semiconductor die including a gate connected to the gate plane, and a sinter element disposed between the semiconductor die and the second substrate to connect the semiconductor die to the second substrate; a battery; and a motor.

First claim

What is claimed is:

1 . A system comprising:
an inverter configured to convert DC power to AC power, wherein the inverter includes:
a power module including:
a first substrate,
a second substrate including a source plane and a gate plane separated from the source plane by a full trench, the source plane including a step trench, and the gate plane including an electrical connection through the second substrate to a gate input connection of the power module,
a semiconductor die disposed between the first substrate and the second substrate, the step trench formed in a portion of the source plane corresponding to an edge of the semiconductor die, and the semiconductor die including a gate connected to the gate plane, and
a sinter element disposed between the semiconductor die and the second substrate to connect the semiconductor die to the second substrate;

a battery configured to supply the DC power to the inverter; and a motor configured to receive the AC power from the inverter to drive the motor.

2 . The system of claim 1 , wherein a thickness of the sinter element is in a range from approximately 25 μm to approximately 50 μm.

3 . The system of claim 2 , wherein the power module is configured to exhibit a drain to source isolation voltage of at least 1200 volts.

4 . A power module comprising:
a first substrate having a first outer layer and a first inner layer; a semiconductor die coupled to a surface of the first inner layer; a second substrate having a second outer layer and a second inner layer, the semiconductor die coupled to a surface of the second inner layer; and a sinter element disposed between the semiconductor die and the second inner layer, wherein the second inner layer includes a body, the body including a source plane and a gate plane separated from the source plane by a full trench, and wherein the body includes a step trench in a portion of the body corresponding to an edge of the semiconductor die.

5 . The power module of claim 4 , wherein a thickness of the sinter element is in a range from approximately 25 μm to approximately 50 μm.

6 . The power module of claim 4 , wherein a thickness of the sinter element is approximately 25 μm.

7 . The power module of claim 4 , wherein a depth of the step trench from a surface of the sinter element attached to the second inner layer to a bottom of the step trench is in a range from approximately 50 μm to approximately 75 μm.

8 . The power module of claim 4 , wherein a depth from a surface of the semiconductor die attached to the sinter element to a bottom surface of the step trench as defined by the body of the second inner layer is in a range from approximately 75 μm to approximately 100 μm.

9 . The power module of claim 4 , wherein the step trench is in the portion of the body corresponding to the edge of the semiconductor die so that a line extending from the edge of the semiconductor die to the body, in a direction orthogonal to the surface of the second inner layer, intersects the step trench.

10 . The power module of claim 4 , wherein a width of the step trench is in a range from approximately 400 μm to approximately 500 μm.

11 . The power module of claim 4 , wherein:
the full trench extends through the body to an insulating layer of the second substrate, and the step trench has a depth that is less than a thickness of the body.

12 . The power module of claim 4 , wherein the step trench is disposed in the source plane and the gate plane.

13 . The power module of claim 4 , wherein the semiconductor die includes a source connection, wherein the source connection is coupled to the source plane of the second inner layer of the second substrate.

14 . The power module of claim 4 , wherein the second substrate further includes a middle layer between the second inner layer and the second outer layer,
wherein the middle layer includes a ceramic, wherein the second outer layer includes a metal, and wherein the second inner layer includes a direct bond copper metallization layer.

15 . The power module of claim 14 , wherein the step trench is in the direct bond copper metallization layer.

16 . An inverter comprising the power module of claim 4 .

17 . A vehicle comprising the inverter of claim 16 .

18 . A power module, comprising:
a first substrate; a second substrate including a first trench extending through a conducting body of the second substrate to an insulating body of the second substrate, and the second substrate including a second trench extending from a surface of the second substrate into the conducting body of the second substrate at a depth less than a thickness of the conducting body; a semiconductor die disposed between the first substrate and the second substrate, the semiconductor die having a drain connection coupled to the first substrate and a source connection coupled to the second substrate; and a sinter element disposed between the semiconductor die and the second substrate, the sinter element having a thickness in a range of 25 μm to 50 μm; wherein the surface of the second substrate is attached to the sinter element.

19 . The power module of claim 18 , wherein the second trench is etched into the conducting body of the second substrate in a portion of the second substrate corresponding to an edge of the semiconductor die.

20 . The power module of claim 18 , wherein a width of the second trench is in a range of 400 μm to 500 μm.

Assignees

• Borgwarner Us Tech Llc

Inventors

• Gertiser Kevin M
• Fruth Chris

Classifications

• H10D64/018

  Spacers formed inside holes at the prospective gate locations, e.g. holes left by removing dummy gates · CPC title

• H05K2201/10166

  Transistor · CPC title

• H05K2201/042

  Stacked spaced PCBs; Planar parts of folded flexible circuits having mounted components in between or spaced from each other · CPC title

• H05K7/2039

  characterised by the heat transfer by conduction from the heat generating element to a dissipating body (arrangements for increasing/decreasing heat-transfer, e.g. fins details, F28F13/00) · CPC title

• H05K5/0247

  Electrical details of casings, e.g. terminals, passages for cables or wiring · CPC title