Substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-12537170-B2
Application number	US-202418442594-A
Country	US
Kind code	B2
Filing date	Feb 15, 2024
Priority date	Jan 7, 2011
Publication date	Jan 27, 2026
Grant date	Jan 27, 2026

Abstract

There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10 . The focus ring 25 includes an inner focus ring 25 a and an outer focus ring 25 b . Here, the inner focus ring 25 a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25 b is placed so as to surround the inner focus ring 25 a and configured not to be cooled. Further, a block member 25 c is provided in a gap between the inner focus ring 25 a and the outer focus ring 25 b.

First claim

We claim:

1 . A substrate processing apparatus comprising:
a chamber; a substrate support disposed in the chamber; a side protection member surrounding the substrate support; an inner ring having an inwardly protruded portion and an outwardly protruded portion, the inner ring being disposed so as to surround a substrate on the substrate support; an outer ring disposed on a top surface of the side protection member and having an inwardly protruded portion, the inwardly protruded portion of the outer ring vertically overlapping with the outwardly protruded portion of the inner ring, the outer ring being disposed so as to surround the inner ring; and a lifter configured to lift up the inner ring away from the outer ring.

2 . The substrate processing apparatus according to claim 1 , wherein the inwardly protruded portion of the outer ring is disposed below the outwardly protruded portion of the inner ring.

3 . The substrate processing apparatus according to claim 2 , wherein at least one of the inner ring and the outer ring comprises Si or SiC.

4 . The substrate processing apparatus according to claim 1 , wherein
the substrate support includes a susceptor, the side protection member is disposed so as to surround the susceptor, and the inner ring is disposed on the susceptor so that the inner ring surrounds the substrate on the susceptor.

5 . The substrate processing apparatus according to claim 1 , wherein the side protection member comprises a dielectric material.

6 . The substrate processing apparatus according to claim 4 , wherein the susceptor includes an electrostatic chuck.

7 . The substrate processing apparatus according to claim 1 , wherein the lifter is configured to lift the inner ring up to a level to make a bottom surface of the inner ring higher than a top surface of the outer ring.

8 . The substrate processing apparatus according to claim 1 , wherein the inwardly protruded portion of the inner ring faces an exposed rear surface of the substrate placed on the substrate support.

9 . The substrate processing apparatus according to claim 1 , wherein
the substrate support includes a susceptor connected to a first high-frequency power supply.

10 . The substrate processing apparatus according to claim 9 , wherein
the susceptor is further connected to a second high-frequency power supply having a frequency higher than that of the first high-frequency power supply.

11 . The substrate processing apparatus according to claim 1 , wherein
the substrate support includes a susceptor, and the susceptor includes: a step-shaped portion formed at a periphery of the susceptor; and a central portion protruding upward.

12 . The substrate processing apparatus according to claim 11 , wherein
the inner ring is provided on the step-shaped portion of the susceptor.

13 . The substrate processing apparatus according to claim 12 , wherein
the lifter is configured to protrude from the step-shaped portion of the susceptor.

14 . The substrate processing apparatus according to claim 6 , wherein
an upper surface of the outer ring is positioned higher than an upper surface of the electrostatic chuck.

15 . The substrate processing apparatus according to claim 1 , wherein the inner ring and the outer ring overlap the top surface of the side protection member in a vertical direction.

16 . The substrate processing apparatus according to claim 1 , further comprising an exhaust plate that partitions the inside of the chamber into an upper portion and a lower portion,
wherein the upper portion includes the substrate support, the inner ring and the outer ring.

17 . The substrate processing apparatus according to claim 16 , wherein the exhaust plate includes multiple through holes.

18 . The substrate processing apparatus according to claim 1 , wherein the inner ring is disposed on the top surface of the side protection member.

Assignees

• Tokyo Electron Ltd

Inventors

• Yamawaku Jun
• Koshimizu Chishio

Classifications

• H01L21/3065

  Electricity · mapped topic

• H01J37/32385

  Treating the edge of the workpieces · CPC title

• C23F4/00

  Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 · CPC title

• C09K13/00

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title

• B08B9/286

  the gas being ionized · CPC title