Chip resistor and method for producing same

Patent metadata

Field	Value
Publication number	US-12537119-B2
Application number	US-202118247704-A
Country	US
Kind code	B2
Filing date	Oct 4, 2021
Priority date	Oct 6, 2020
Publication date	Jan 27, 2026
Grant date	Jan 27, 2026

Abstract

A chip resistor includes an insulating substrate, a resistance element, and an electrode. The resistance element includes Cr, Si, and N and is disposed on the insulating substrate. The electrode includes at least one refractory metal and is disposed on the resistance element. An atomic ratio of Si to Cr in the resistance element is greater than or equal to ⅔ and less than or equal to 4 at least at a center of the resistance element in a thickness direction defined with respect to the resistance element. An atom percentage of N in the resistance element is lower than or equal to 50 atom % at least at the center of the resistance element in the thickness direction.

First claim

The invention claimed is:

1 . A chip resistor comprising:
an insulating substrate; a resistance element including Cr, Si, and N and disposed on the insulating substrate; an electrode including at least one refractory metal and disposed on the resistance element, the at least one refractory metal being a metal having a melting point of 800° C. or higher; and a surface oxynitride layer made of an oxynitride film including Si, Cr and Al, wherein: an atomic ratio of Si to Cr in the resistance element is greater than or equal to ⅔ and less than or equal to 4 at least at a center of the resistance element in a thickness direction defined with respect to the resistance element, an atomic percentage of N in the resistance element being is lower than or equal to 50 atom % at least at the center of the resistance element in the thickness direction, and an atomic percentage of Si in the surface oxynitride layer is greater than a sum of an atomic percentage of Cr and an atomic percentage of Al in the surface oxynitride layer.

2 . The chip resistor of claim 1 , wherein
the resistance element further includes O, and an atomic percentage of O in the resistance element is lower than or equal to 10 atom % at least at the center of the resistance element in the thickness direction.

3 . The chip resistor of claim 1 , wherein
a specific resistance of the resistance element is greater than or equal to 500 μΩ·cm and less than or equal to 20000 μΩ·cm.

4 . A chip resistor of claim 1 , wherein
a temperature coefficient of resistance of the resistance element is higher than or equal to −25 ppm/° C. and lower than or equal to +25 ppm/° C.

5 . The chip resistor of claim 1 , wherein
the surface oxynitride layer is disposed on a portion of a surface on an opposite side of the resistance element from the insulating substrate except for a portion where the electrode is formed.

6 . A method for producing the chip resistor of claim 1 , the method comprising:
an electrode forming step of forming the electrode on the resistance element by sputtering; and a patterning step of patterning the electrode on the resistance element by etching.

7 . The method of claim 6 further comprising a heat treatment step of performing heat treatment on the resistance element and the electrode formed on the resistance element.

8 . The method of claim 7 , wherein
in the heat treatment step, a heat treatment temperature is higher than or equal to 500° C. and lower than or equal to 800° C.

9 . A method for producing the chip resistor of claim 1 , the method comprising an electrode forming step of forming the electrode on the resistance element by masked sputtering and patterning the electrode.

10 . A chip resistor comprising:
an insulating substrate; a resistance element including Cr, Si, N, and Al and disposed on the insulating substrate; an electrode including at least one refractory metal and disposed on the resistance element, the at least one refractory metal being a metal having a melting point of 800° C. or higher; and a surface oxynitride layer made of an oxynitride film including Si, Cr and Al, wherein: an atomic ratio of Si to Cr in the resistance element is greater than or equal to ⅔ and less than or equal to 4 at least at a center of the resistance element in a thickness direction defined with respect to the resistance element, an atomic percentage of N in the resistance element is lower than or equal to 50 atom % at least at the center of the resistance element in the thickness direction, an atomic percentage of Al in the resistance element is lower than or equal to 30 atom % at least at the center of the resistance element in the thickness direction, and an atomic percentage of Si is greater than a sum of an atomic percentage of Cr and an atomic percentage of Al in the surface oxynitride layer.

11 . The chip resistor of claim 10 , wherein
the resistance element further includes O, and an atomic percentage of O in the resistance element is lower than or equal to 10 atom % at least at the center of the resistance element in the thickness direction.

12 . The chip resistor of claim 10 , wherein
a specific resistance of the resistance element is greater than or equal to 500 μΩ·cm and less than or equal to 20000 μΩ·cm.

13 . A chip resistor of claims 10 , wherein
a temperature coefficient of resistance of the resistance element is higher than or equal to −25 ppm/° C. and lower than or equal to +25 ppm° C.

14 . The chip resistor of claim 10 , wherein the surface oxynitride layer is disposed on a portion of a surface on an opposite side of the resistance element from the insulating substrate except for a portion where the electrode is formed.

15 . A method for producing the chip resistor of claim 10 , the method comprising:
an electrode forming step of forming the electrode on the resistance element by sputtering; and a patterning step of patterning the electrode on the resistance element by etching.

16 . The method of claim 15 , further comprising a heat treatment step of performing heat treatment on the resistance element and the electrode formed on the resistance element.

17 . The method of claim 16 , wherein
in the heat treatment step, a heat treatment temperature is higher than or equal to 500° C. and lower than or equal to 800° C.

18 . A method for producing the chip resistor of claim 10 , the method comprising an electrode forming step of forming the electrode on the resistance element by masked sputtering and patterning the electrode.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Suetsugu Daisuke
• Noguchi Norimichi
• Urakawa Tatsuya
• Oda Hiroki
• Ueyama Daisuke

Classifications

• H01C17/288

  by thin film techniques · CPC title

• H01C17/12

  by sputtering · CPC title

• H01C17/006

  adapted for manufacturing resistor chips · CPC title

• H01C7/006

  Thin film resistors · CPC title

• H01C1/142 Primary

  the terminals or tapping points being coated on the resistive element · CPC title