Device and method for generating a dielectric barrier discharge

US12532402B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12532402-B2
Application numberUS-202118043689-A
CountryUS
Kind codeB2
Filing dateSep 15, 2021
Priority dateSep 16, 2020
Publication dateJan 20, 2026
Grant dateJan 20, 2026

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

In an embodiment a device includes a thermoelectric component, an electrode arranged opposite the thermoelectric component and a high voltage source configured to generate a high voltage between the thermoelectric component and the electrode sufficient to ignite a dielectric barrier discharge.

First claim

Opening claim text (preview).

The invention claimed is: 1 . A device for generating a dielectric barrier discharge, the device comprising: a thermoelectric component; an electrode arranged opposite the thermoelectric component; and a high voltage source configured to generate a high voltage between the thermoelectric component and the electrode sufficient to ignite the dielectric barrier discharge, wherein an area of the thermoelectric component is larger than an area of the electrode. 2 . The device according to claim 1 , wherein the thermoelectric component comprises two or more thermoelectric elements, and metal bridges connecting the thermoelectric elements, and wherein the thermoelectric component further comprises a first ceramic plate covering the metal bridges on an upper surface of the thermoelectric component facing the electrode, and a second ceramic plate covering the metal bridges at a bottom side of the thermoelectric component. 3 . The device according to claim 2 , wherein the first ceramic plate comprises aluminum oxide and/or aluminum nitride. 4 . The device according to claim 2 , wherein the first ceramic plate has an insulating region so that an electric field does not penetrate and/or a conductive region along which the electric field is guided. 5 . The device according to claim 2 , wherein the thermoelectric elements are arranged in a row, and wherein two thermoelectric elements adjacent to each other are connected to each other in a meandering manner on their upper side or on their lower side by a metal bridge. 6 . The device according to claim 2 , wherein the thermoelectric elements are arranged in a two-dimensional matrix structure, wherein the metal bridges connect the thermoelectric elements in a two-dimensional meander shape, and wherein thermoelectric elements adjacent to each other along the two-dimensional meander shape are connected to each other at their upper side or at their lower side by a metal bridge. 7 . The device according to claim 2 , wherein the metal bridges are each separated by a non-metallized surface, wherein a maximum extension of the non-metallized surfaces, between two adjacent metal bridges, is smaller than a thickness of the first ceramic plate. 8 . The device according to claim 2 , wherein the metal bridges and the first ceramic plate are dimensioned such that the following inequality is satisfied: D>U ignition /U operation ×ε 2 /ε 1 ×A , and wherein D indicates a thickness of the first ceramic plate, U ignition indicates an ignition voltage above which plasma ignitions occur between the metal bridges, U operation indicates an operating voltage applied to the device, ε 2 indicates a dielectric constant of the first ceramic plate, ε 1 indicates a dielectric constant of air, and A indicates a distance from adjacent metal bridges. 9 . The device according to claim 2 , further comprising a weakly conductive layer disposed on an inner side of the first ceramic plate facing the metal bridges. 10 . The device according to claim 9 , wherein the weakly conductive layer is a layer deposited on the first ceramic plate using thin film technology. 11 . The device according to claim 9 , wherein the first ceramic plate has a multilayer structure, the weakly conductive layer being formed as a sublayer of the first ceramic plate. 12 . The device according to claim 9 , wherein the weakly conductive layer has a resistance that is greater by at least a factor of 100 than a resistance of a meander-shaped connection of the thermoelectric elements via the metal bridges. 13 . The device according to claim 9 , wherein the weakly conductive layer comprises at least one conductive element comprising Cr or Ni, and/or at least one semiconductive element comprising B or Si, and/or at least one insulating material comprising SiO 2 or Al 2 O 3 . 14 . The device according to claim 2 , further comprising a conductive structure, which is arranged between the second ceramic plate and the metal bridges arranged at bottom sides of the thermoelectric elements, and which is connected to ground potential. 15 . The device according to claim 14 , where the conductive structure is reticular. 16 . The device according to claim 2 , wherein the thermoelectric component is a Peltier element, and wherein the thermoelectric elements comprise a semiconductor material or semiconducting ceramic material. 17 . The device according to claim 2 , wherein the thermoelectric elements comprise a thermoelectric ceramic material. 18 . The device according to claim 17 , wherein the thermoelectric ceramic material comprises a calcium-manganese oxide being partially doped with Fe atoms at sites of Mn atoms, or wherein the thermoelectric ceramic material comprises a material described by the general formula Ca 1-x-y ISO x DON y Mn 1-z Fe z O n , where ISO denotes a divalent element capable of replacing Ca 2+ in a crystal lattice, DON denotes an element that is able to replace Ca 2+ in the crystal lattice and provides electrons for electrical conductivity, and where 0≤x≤0.5, 0<y≤0.5, 0.0001≤z<0.2, n≥2, or wherein the thermoelectric ceramic material comprises a material based on the composition (Ca 3-x Na x )Co 4 O 9-δ , with 0.1≤x≤2.9 and 0<δ≤2. 19 . The device according to claim 1 , wherein the high voltage source is configured to apply a high voltage alternating potential to the electrode, and wherein the device comprises a DC voltage source configured to apply a low DC voltage to the thermoelectric component. 20 . The device according to claim 1 , wherein the device is configured to ignite the dielectric barrier discharge as a volume discharge between the thermoelectric component and the electrode. 21 . The device according to claim 1 , wherein the thermoelectric component has a metallization on a surface facing the electrode, wherein the high voltage source is configured to apply a high voltage potential to the thermoelectric component. 22 . The device according to claim 21 , wherein the metallization consists of a conductive material and/or of a semiconductive material comprising a mixture of bismuth and rhodium. 23 . The device according to claim 21 , wherein the metallization consists of a Mo/Mn paste baked in a hydrogen atmosphere or a W paste mixed with oxide coupling agents. 24 . The device according to claim 21 , wherein the device is configured to ignite the dielectric barrier discharge as a surface discharge on the metallization. 25 . The device according to claim 1 , wherein the thermoelectric component is configured to cool a process gas or heat the process gas, and/or wherein the thermoelectric component is configured to continuously change a temperature of the process gas in an operating cycle. 26 . The device according to claim 1 , wherein the electrode and/or the thermoelectric component are coated with a glassy layer. 27 . The device according to claim 1 , further comprising a controller configured to: operate the device in a cooling mode in which no dielectric barrier discharge is initiated and a surface of the device is cooled below a dew point of a process gas so that a water film is generated on the surface by condensation, and subsequently operate the device in a discharging mode in which the dielectric barrier discharge is generated on the water film. 28 . The devi

Assignees

Inventors

Classifications

  • Cooling arrangements · CPC title

  • Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00 · CPC title

  • Skin treatments, e.g. disinfection or wound treatment · CPC title

  • DC, AC or pulsed generators · CPC title

  • Surface discharges, e.g. air flow control · CPC title

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Frequently asked questions

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What does patent US12532402B2 cover?
In an embodiment a device includes a thermoelectric component, an electrode arranged opposite the thermoelectric component and a high voltage source configured to generate a high voltage between the thermoelectric component and the electrode sufficient to ignite a dielectric barrier discharge.
Who is the assignee on this patent?
Tdk Electronics Ag
What technology area does this patent fall under?
Primary CPC classification H05H1/2437. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 20 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).