Substrate processing apparatus, raw material cartridge, substrate processing method, and raw material cartridge manufacturing method

Patent metadata

Field	Value
Publication number	US-12529138-B2
Application number	US-202017773998-A
Country	US
Kind code	B2
Filing date	Oct 26, 2020
Priority date	Nov 5, 2019
Publication date	Jan 20, 2026
Grant date	Jan 20, 2026

Abstract

A substrate processing apparatus includes: a chamber; and a processing gas supply unit connected to the chamber via a processing gas supply flow path and configured to supply a processing gas. The processing gas supply unit includes a raw material cartridge that includes a raw material tank that accommodates a porous member containing a metal-organic framework adsorbed with gas molecules of a raw material of the processing gas; a main body configured to communicate the raw material tank and the processing gas supply flow path with each other when the raw material cartridge is attached; and a desorption mechanism configured to desorb the gas molecules of the raw material of the processing gas and allow the gas molecules to flow out as the processing gas to the processing gas supply flow path while the raw material cartridge is attached to the main body.

First claim

What is claimed is:

1 . A substrate processing apparatus comprising:
a chamber configured to accommodate a substrate; and a processing gas supply connected to the chamber via a flow path and configured to supply a processing gas for processing the substrate, wherein the processing gas supply includes: a raw material cartridge including a raw material tank that accommodates a porous member containing a metal-organic framework adsorbed with gas molecules of a raw material of the processing gas, the metal-organic framework having a structure in which nanometer-sized pores are regularly and three-dimensionally arranged; a main body including a container portion configured to allow the raw material cartridge to be installed thereon or removed therefrom and a cover portion that is connected to the flow path to communicate the raw material tank and the flow path with each other and closes an opening of the container portion when the raw material cartridge is installed; and a desorber configured to desorb the gas molecules of the raw material of the processing gas adsorbed onto the metal-organic framework and allow the gas molecules to flow out as the processing gas to the flow path while the raw material cartridge is installed on the main body, and wherein the raw material cartridge further includes a short pipe portion provided on an upper surface of the raw material tank and connected to the cover portion, and when the raw material cartridge is installed to the main body, the short pipe portion is connected to the flow path.

2 . The substrate processing apparatus according to claim 1 , wherein the raw material of the processing gas is a liquid or solid substance at normal temperature and normal pressure.

3 . The substrate processing apparatus according to claim 1 , wherein the desorber includes a porous member heater configured to heat the porous member in a raw material tank to desorb the gas molecules of the raw material of the processing gas.

4 . The substrate processing apparatus according to claim 1 , wherein the metal-organic framework is selected from the group consisting of metal-organic frameworks described in (a) to (c) below:
(a) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between an iron ion and 1,3,5-benzenetricarboxylic acid; (b) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a chromium ion and terephthalic acid; and (c) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a lanthanum ion and 1,3,5-tris(4-carboxyphenyl)benzene.

5 . The substrate processing apparatus according to claim 1 , wherein the flow path includes a flow rate regulator configured to regulate a flow rate of the processing gas.

6 . The substrate processing apparatus according to claim 1 , wherein the substrate processing apparatus is configured to supply the processing gas so as to form a film on the substrate, and the raw material of the processing gas is a metal halide.

7 . The substrate processing apparatus according to claim 6 , wherein the metal halide is selected from the metal halide group consisting of aluminum chloride, tungsten pentoxide, and titanium tetrachloride.

8 . The substrate processing apparatus according to claim 6 , further comprising:
a processing gas supply stop valve provided in the flow path and configured to supply and stop supplying the processing gas to the chamber; a reaction gas supply configured to supply a reaction gas that reacts with the processing gas to form the film and including a reaction gas supply stop valve configured to supply and stop supplying the reaction gas to the chamber; and a controller, wherein the controller is configured to control the processing gas supply stop valve and the reaction gas supply stop valve such that the processing gas and the reaction gas are alternately supplied to the chamber.

9 . The substrate processing apparatus according to claim 1 , wherein with respect to the metal-organic framework, the raw material of the processing gas is adsorbed so that one or more gas molecules of the raw material enter each of the nanometer-sized pores.

10 . A raw material cartridge installed on a substrate processing apparatus for manufacturing a semiconductor device and configured to supply a processing gas for processing the substrate, the raw material cartridge comprising:
a raw material tank that accommodates a porous member containing a metal-organic framework adsorbed with gas molecules of a raw material of the processing gas, the metal-organic framework having a structure in which nanometer-sized pores are regularly and three-dimensionally arranged, wherein the raw material cartridge is configured to perform a desorption operation, thereby desorbing the gas molecules of the raw material of the processing gas adsorbed onto the metal-organic framework and supplying a raw material gas of a film, and the metal-organic framework is selected from the group consisting of metal-organic frameworks described in (a) to (c) below: (a) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between an iron ion and 1,3,5-benzenetricarboxylic acid; (b) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a chromium ion and terephthalic acid; and (c) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a lanthanum ion and 1,3,5-tris(4-carboxyphenyl)benzene.

11 . The raw material cartridge according to claim 10 , wherein the raw material of the processing gas is a liquid or solid substance at normal temperature and normal pressure.

12 . The raw material cartridge according to claim 10 , wherein the desorption operation is an operation of heating the porous member in the raw material tank and desorbing the gas molecules of the raw material of the processing gas.

13 . A substrate processing method comprising:
installing a raw material cartridge including a raw material tank that accommodates a porous member containing a metal-organic framework in which gas molecules of a raw material of a processing gas for processing a substrate are adsorbed onto a container portion of a main body of a processing gas supply, the metal-organic framework having a structure in which nanometer-sized pores are regularly and three-dimensionally arranged, and the container portion being configured to allow the raw material cartridge to be installed thereon or removed therefrom; closing an opening of the container portion with a cover portion of the main body, the cover portion being connected to a flow path connected to a chamber of a substrate processing apparatus to communicate the raw material tank and the flow path with each other; desorbing the gas molecules of the raw material of the processing gas adsorbed onto the metal-organic framework in the processing gas supply, thereby obtaining the processing gas; and supplying the processing gas to a chamber in which the substrate is accommodated, wherein the raw material cartridge further includes a short pipe portion provided on an upper surface of the raw material tank and connected to the cover portion, and when the raw material cartridge is installed to the main body, the short pipe portion is connected to th

Assignees

• Tokyo Electron Ltd

Inventors

• Harada Muneo
• Okabe Tsuneyuki

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/303

  Nitrides · CPC title