Processing method and processing apparatus

Patent metadata

Field	Value
Publication number	US-12528153-B2
Application number	US-202117904297-A
Country	US
Kind code	B2
Filing date	Feb 4, 2021
Priority date	Feb 17, 2020
Publication date	Jan 20, 2026
Grant date	Jan 20, 2026

Abstract

A processing method of processing a substrate in a processing apparatus includes performing a first grinding processing on the substrate in a first grinder; performing a second grinding processing on the substrate in a second grinder; performing a first re-grinding processing on the substrate in the first grinder; and performing a second re-grinding processing on the substrate in the second grinder. The substrate is ground to a final thickness in the second re-grinding processing.

First claim

I claim:

1 . A processing method of processing a substrate in a processing apparatus, the processing method comprising:
performing a first grinding processing on the substrate in a first grinder; thereafter, performing a second grinding processing on the substrate in a second grinder; thereafter, measuring a thickness distribution of the substrate after being subjected to the second grinding processing: thereafter, performing a first re-grinding processing on the substrate in the first grinder without changing a relative inclination between a substrate holder configured to hold the substrate and the first grinder as in the first grinding processing; and thereafter, performing a second re-grinding processing on the substrate in the second grinder, the substrate being ground to a final thickness in the second re-grinding processing, wherein the second re-grinding processing is performed in a state that the substrate is maintained at a relative inclination between the substrate holder and the second grinder determined based on the measured thickness distribution.

2 . The processing method of claim 1 ,
wherein a grinding amount of the substrate in the first grinding processing is equal to a grinding amount of the substrate in the first re-grinding processing, and a grinding amount of the substrate in the second grinding processing is equal to a grinding amount of the substrate in the second re-grinding processing.

3 . The processing method of claim 1 , further comprising:
performing a rough grinding to reduce a thickness of the substrate, before the first grinding processing.

4 . The processing method of claim 3 ,
wherein a grinding amount of the substrate in the rough grinding is larger than the grinding amount of the substrate in the first grinding processing and is larger than the grinding amount of the substrate in the second grinding processing.

5 . The processing apparatus of claim 1 ,
wherein the controller controls the first grinder and the second grinder such that a grinding amount of the substrate in the first grinding processing is equal to a grinding amount of the substrate in first re-grinding processing, and such that a grinding amount of the substrate in the second grinding processing is equal to a grinding amount of the substrate in the second re-grinding processing.

6 . The processing apparatus of claim 1 ,
wherein: multiple substrates are successively processed, the controller is configured to control the thickness distribution measuring device to measure a final thickness distribution of the substrate, and the controller is configured to perform, on a first sheet of substrate held by the substrate holder, a re-grinding processing of the substrate by the first grinder and the second grinder, and the controller is configured to control the first grinder and the second grinder to perform, on a n th sheet of substrate (n is a natural number equal to or larger than 2) held by the substrate holder, a before-finishing grinding processing in the first grinder and a finishing grinding processing in the second grinder to finely grind the substrate to a final thickness, based on the final thickness distribution measured in a m th sheet of substrate (m is a natural number equal to or larger than 1 and equal to or less than n−1).

7 . The processing apparatus of claim 6 ,
wherein the controller is configured to control the first grinder and the second grinder such that a grinding amount of the substrate in the first re-grinding processing is equal to a grinding amount of the substrate in the before-finishing grinding processing, and such that a grinding amount of the substrate in the second re-grinding processing is equal to a grinding amount of the substrate in the finishing grinding processing.

8 . A processing method of processing a substrate in a processing apparatus, the processing method comprising:
processing multiple substrates successively in the processing apparatus; performing a first grinding processing on the substrate in a first grinder; performing a second grinding processing on the substrate in a second grinder; performing a first re-grinding processing on a first sheet of substrate held by a substrate holder in the first grinder; and performing a second re-grinding processing on the first sheet of substrate in the second grinder, wherein the first sheet of substrate is ground to a final thickness in the second re-grinding processing; measuring a final thickness distribution of the first sheet of substrate; and processing a n th sheet of substrate (n is a natural number equal to or larger than 2) held by the substrate holder without performing the first re-grinding processing and the second re-grinding processing, wherein the n th sheet of substrate is subjected to, based on the final thickness distribution measured in a m th sheet of substrate (m is a natural number equal to or larger than 1 and equal to or less than n−1), a before-finishing grinding processing in the first grinder and a finishing grinding processing in the second grinder to be finely ground to a final thickness.

9 . The processing method of claim 8 ,
wherein a grinding amount of the substrate in the first re-grinding processing is equal to a grinding amount of the substrate in the before-finishing grinding processing, and a grinding amount of the substrate in the second re-grinding processing is equal to a grinding amount of the substrate in the finishing grinding processing.

10 . A processing apparatus configured to perform a grinding processing on a substrate, comprising:
a first grinder configured to perform a first grinding processing on the substrate; a second grinder configured to perform a second grinding processing on the substrate; a substrate holder configured to hold the substrate; a thickness distribution measuring device configured to measure a thickness distribution of the substrate: an inclination adjusting device configured to adjust a relative inclination between the substrate holder and the second grinder; and a controller and a storage storing a computer program, wherein the storage and the computer program are configured, with the controller, to control the grinding processing of the substrate, wherein the controller is configured to control the processing apparatus to: perform the first grinding processing on the substrate in the first grinder, thereafter, perform the second grinding processing on the substrate in the second grinder, thereafter, measure a thickness distribution of the substrate after being subjected to the second grinding processing, thereafter, perform a first re-grinding processing on the substrate in the first grinder without changing a relative inclination between a substrate holder configured to hold the substrate and the first grinder as in the first grinding processing, and thereafter, perform a second re-grinding processing on the substrate in the second grinder to thereby finely grind the substrate to a final thickness in the second re-grinding processing, and wherein the second re-grinding processing is performed in a state that the substrate is maintained at a relative inclination between the substrate holder and the second grinder determined based on the measured thickness distribution.

11 . The processing apparatus of claim 10 , further comprising:
a rough grinding device configured to reduce a thickness of the substrate.

12 . The processing apparatus of claim 11 ,
wherein the controller is configured to control the rough grinding device such that a grinding amount of the substrate in the rough grinding device is larger than grinding amounts of the subst

Assignees

• Tokyo Electron Ltd

Inventors

• Sakaue Takashi

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• B24B51/00

  Arrangements for automatic control of a series of individual steps in grinding a workpiece (if applicable to other machine tools, G05B takes precedence) · CPC title

• B24B7/228

  for grinding thin, brittle parts, e.g. semiconductors, wafers (grinding edges of thin, brittle parts B24B9/065) · CPC title

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/7626

  characterised by the construction of the shaft · CPC title