Current limiting diode

Patent metadata

Field	Value
Publication number	US-12525792-B2
Application number	US-202217957273-A
Country	US
Kind code	B2
Filing date	Sep 30, 2022
Priority date	Oct 28, 2021
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

There is provided a current limiting diode comprising a gate, a source, and a drain electrically connected to the source by an n-channel or p-channel; wherein the source and the gate are electrically connected by a fill structure comprising a phase-change fill material, and wherein the phase-change fill material is configured to absorb heat from the n-channel or p-channel by changing phase.

First claim

The invention claimed is:

1 . A current limiting diode comprising a gate, a source, and a drain electrically connected to the source by an n-channel or p-channel; wherein the source and the gate are electrically connected by a fill structure comprising a phase-change fill material, and wherein the phase-change fill material is configured to absorb heat from the n-channel or p-channel by changing phase.

2 . The current limiting diode of claim 1 , wherein the phase-change fill material abuts the n-channel or p-channel for heat exchange therebetween.

3 . The current limiting diode of claim 1 , wherein the phase-change fill material comprises a material which is in a substantially solid phase at or about 125° C. but which transitions to a substantially liquid phase at a temperature which is greater than 125° C.

4 . The current limiting diode of claim 1 , wherein the fill structure further comprises a solid-phase fill material which is configured to remain in a solid phase as the phase-change fill material changes phase.

5 . The current limiting diode of claim 1 , wherein the drain and/or the source is provided with a heat sink comprising a phase-change heat sink material configured to absorb heat from the n-channel or p-channel via the drain and/or the source by changing phase.

6 . The current limiting diode of claim 5 , wherein the heat sink comprises a solid-phase heat sink material which is configured to remain in a solid phase as the phase-change heat sink material changes phase.

7 . The current limiting diode of claim 1 , wherein the phase-change heat sink material comprises a material which is in a substantially solid phase at or about 125° C. but which transitions to a substantially liquid phase at a temperature which is greater than 125° C.

8 . The current limiting diode of claim 1 , wherein the drain is electrically connected to the source by an n-channel.

9 . A bidirectional current limiting device comprising a first current limiting diode and a second current limiting diode, wherein:
each current limiting diode is in accordance with claim 1 ; and the source of the first current limiting diode is electrically connected to the source of the second current limiting diode.

10 . An electrical power system comprising:
the current limiting diode of claim 1 ; an electrical power source; and an electrical network, wherein the current limiting diode or the bidirectional current limiting device is configured to limit a fault current passing between the electrical power source and the electrical network in a fault condition.

11 . The electrical power system of claim 10 , further comprising a controllable circuit interruption device configured to interrupt the fault current in response to a determination that the electrical power system is in the fault condition.

12 . The electrical power system of claim 11 , wherein the electrical power source comprises a battery.

13 . The electrical power system of claim 10 , further comprising a power electronics converter.

14 . An aircraft power and propulsion system comprising the current limiting diode of claim 1 .

15 . An aircraft comprising the current limiting diode of claim 1 .

Assignees

• Rolls Royce Plc

Inventors

• Trainer David R
• Chivite Zabalza Francisco Javier
• Sweet Mark
• Incerpi Gian

Classifications

• H10D8/00 Primary

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• G05F3/242

  with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage · CPC title

• H10D62/117

  Shapes of semiconductor bodies · CPC title

• H02H9/025 Primary

  Current limitation using field effect transistors · CPC title