Interconnect line structures with metal chalcogenide cap materials

Patent metadata

Field	Value
Publication number	US-12525488-B2
Application number	US-202117560089-A
Country	US
Kind code	B2
Filing date	Dec 22, 2021
Priority date	Dec 22, 2021
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

Integrated circuit interconnect structures including an interconnect line metallization feature subjected to one or more chalcogenation techniques to form a cap may reduce line resistance. A top portion of a bulk line material may be advantageously crystallized into a metal chalcogenide cap with exceptionally large crystal structure. Accordingly, chalcogenation of a top portion of a bulk material can lower scattering resistance of an interconnect line relative to alternatives where the bulk material is capped with an alternative material, such as an amorphous dielectric or a fine grained metallic or graphitic material.

First claim

What is claimed is:

1 . An integrated circuit (IC) interconnect structure, comprising:
a via metallization within a dielectric material; and a line metallization over, and coupled to, the via metallization, wherein the line metallization comprises:
a bulk material comprising a first metal;
a liner material between a bottom of the bulk material and the dielectric material and adjacent to a sidewall of the bulk material, the liner material comprising a second metal; and
a cap material over the bulk material, but not over the liner material adjacent to the sidewall of the bulk material, wherein the cap material comprises a first atomic layer of predominantly the first metal in contact with a second atomic layer of predominantly a chalcogen.

2 . The IC interconnect structure of claim 1 , wherein the chalcogen comprises S or Se.

3 . The IC interconnect structure of claim 2 , wherein the first metal is Cu, and the second metal is Ta, Mo, W, Al, Ti, W or Pt.

4 . The IC interconnect structure of claim 1 , wherein the cap material has a thickness less than 6 nm and where a top surface of the cap material is substantially co-planar with a top surface of at least one of the liner or a dielectric material adjacent to the liner.

5 . The IC interconnect structure of claim 1 , wherein the cap comprises the first atomic layer of predominantly the metal between two of the second atomic layers of predominantly the chalcogen.

6 . The IC interconnect structure of claim 1 , wherein the line metallization extends a lateral length within a plane of the IC interconnect structure and the first and second atomic layers are parallel to the plane.

7 . The IC interconnect structure of claim 1 , wherein the first atomic layer is continuous over a grain length, and wherein the grain length is at least 1 μm.

8 . The IC interconnect structure of claim 1 , further comprising a diffusion barrier over the cap, wherein the diffusion barrier comprises a second dielectric material.

9 . The IC interconnect structure of claim 8 , wherein the second dielectric material comprises nitrogen and silicon.

10 . A computer platform comprising:
a power supply; and an integrated circuit (IC) coupled to the power supply, wherein the IC comprises:
a device layer comprising a plurality of transistors comprising one or more semiconductor materials; and
a plurality of interconnect levels, the interconnect levels further comprising the IC interconnect structure of claim 1 .

11 . The computer platform of claim 10 , wherein the IC comprises a microprocessor.

12 . The computer platform of claim 10 , wherein:
the chalcogen comprises S or Se; the first metal is Cu or Mo; the cap material has a thickness less than 6 nm; the cap material comprises a first atomic layer of predominantly the Cu or Mo in contact with a second atomic layer of predominantly the S or Se; the first atomic layer is continuous over a grain length of the cap material; and the grain length is at least 1 μm.

Assignees

• Intel Corp

Inventors

• Naylor Carl H
• Jezewski Christopher

Classifications

• H10P14/3258

  Crystal orientation · CPC title

• H10P14/3231

  Selenides · CPC title

• H10P14/3228

  Sulfides · CPC title

• H10W20/435

  Cross-sectional shapes or dispositions of interconnections · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title