Apparatus for treating substrate and method for treating substrate

Patent metadata

Field	Value
Publication number	US-12525474-B2
Application number	US-202217865918-A
Country	US
Kind code	B2
Filing date	Jul 15, 2022
Priority date	Jul 22, 2021
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

First claim

What is claimed is:

1 . A substrate treating apparatus comprising:
a support configured to horizontally maintain a substrate; a laser irradiation unit configured to irradiate the substrate with a laser; a photo-detector configured to detect an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, the processor being configured to cause the laser irradiation unit to first irradiate a bottom surface of the substrate using a first laser with a first output, and second irradiate the substrate to heat the substrate using a second laser with a second output, based on an energy of a first reflective light reflected from the bottom surface of the substrate by the first laser detected from the photo-detector, wherein the processor is configured to calculate a reflectivity and an absorption rate from the energy of the first reflective light, and set the second output to be inversely proportioned to the absorption rate.

2 . The substrate treating apparatus of claim 1 , wherein the first output is lower than the second output.

3 . The substrate treating apparatus of claim 1 , further comprising:
a liquid supply configured to supply a liquid on the substrate, and wherein the processor is configured to cause the laser irradiation unit to
form a liquid film on the substrate, and
irradiate the second laser of the second output to the substrate.

4 . The substrate treating apparatus of claim 1 , wherein the processor is configured to
compare the energy of the first reflective light with a reference value which is pre-stored, and sets the second output to be higher than a reference output of the reference value if the energy of the first reflected light is larger than an energy of a reflected light of the reference value, and sets the second output to be lower than the reference output of the reference value if the energy of the first reflected light is smaller than the energy of the reflected light of the reference value.

5 . The substrate treating apparatus of claim 1 , wherein the processor is configured to set the second output to be the same as an energy absorbed by a reference wafer according to a reference output of a pre-stored reference value.

6 . The substrate treating apparatus of claim 1 , wherein the photo-detector is configured to detect a reflective light in real time while the substate is heat treated with the second laser, and
the processor is configured to
monitor the reflective light being detected in real time, and
adjust an intensity of the second output if an energy of the reflective light changes.

7 . The substrate treating apparatus of claim 5 , wherein the processor is configured to adjust the intensity of the second output to be weaker if the energy of the reflective light becomes smaller.

8 . The substrate treating apparatus of claim 6 , wherein the processor is configured to adjust the intensity of the second output to be stronger if the energy of the reflective light becomes larger.

Assignees

• Semes Co Ltd

Inventors

• Lee Jee Young
• Chung Young Dae
• Jeong Ji Hoon
• Kim Won-Geun
• Kim Tae Shin

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/0422

  for wet etching · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P72/0604 Primary

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title