Plasma uniformity control using a pulsed magnetic field

US12525458B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12525458-B2
Application numberUS-202118010453-A
CountryUS
Kind codeB2
Filing dateNov 2, 2021
Priority dateNov 20, 2020
Publication dateJan 13, 2026
Grant dateJan 13, 2026

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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In some implementations, a method for performing a plasma process in a chamber is provided, including: supplying a process gas to the chamber; applying pulsed RF power to the process gas in the chamber, the pulsed RF power being provided at a predefined frequency, wherein the applying of the pulsed RF power to the process gas generates a plasma in the chamber; during the applying of the RF power, applying a pulsed DC current to a magnetic coil that is disposed over the chamber, wherein the pulsed DC current is provided at the predefined frequency.

First claim

Opening claim text (preview).

The invention claimed is: 1 . A method for performing a plasma process in a chamber, comprising: supplying a process gas to the chamber; applying RF power to the process gas to generate a plasma in the chamber; and during the applying of the RF power, sequentially pulsing DC current through a plurality of concentric magnetic coils disposed over the chamber, to generate a radial magnetic field wave in the chamber, wherein sequentially pulsing the DC current includes synchronizing a frequency of the pulsing of the DC current provided to the plurality of concentric magnetic coils so as to pulse at a frequency of the RF power. 2 . The method of claim 1 , wherein the radial magnetic field wave sweeps radially outward from a center region of the chamber to a peripheral region of the chamber. 3 . The method of claim 1 , wherein sequentially pulsing DC current is defined by providing a DC current pulse to each of the magnetic coils consecutively in order, from an innermost magnetic coil to an outermost magnetic coil, with a time delay between initiating the DC current pulse to adjacent ones of the magnetic coils. 4 . The method of claim 1 , wherein the plurality of concentric magnetic coils are substantially oriented along a same plane. 5 . The method of claim 1 , wherein the sequentially pulsing DC current is cycled to repeatedly generate radial magnetic field waves in the chamber. 6 . The method of claim 1 , wherein the sequentially pulsing DC current through the plurality of concentric magnetic coils includes providing pulsed DC current to each of the magnetic coils by respective power supplies. 7 . The method of claim 1 , wherein the radial magnetic field wave reduces localized accumulation of charged species in the plasma. 8 . The method of claim 7 , wherein the reducing localized accumulation of charged species in the plasma further reduces non-uniformity of an etch process that is performed by the plasma. 9 . The method of claim 1 , wherein each cycle of the RF power is defined by a first state at a first power level and a second state at a second power level, wherein the second power level is less than the first power level. 10 . The method of claim 9 , wherein pulsing the DC current further includes synchronizing the DC current to the first state of the RF power, wherein synchronizing includes substantially simultaneously initiating the DC current to the magnetic coil with initiation of the first state of the RF power, and substantially simultaneously terminating the DC current to the magnetic coil with termination of the first state of the RF power. 11 . The method of claim 9 , wherein pulsing the DC current further includes synchronizing the DC current to the second state of the RF power, wherein synchronizing includes substantially simultaneously initiating the DC current to the magnetic coil with initiation of the second state of the RF power, and substantially simultaneously terminating the DC current to the magnetic coil with termination of the second state of the RF power.

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What does patent US12525458B2 cover?
In some implementations, a method for performing a plasma process in a chamber is provided, including: supplying a process gas to the chamber; applying pulsed RF power to the process gas in the chamber, the pulsed RF power being provided at a predefined frequency, wherein the applying of the pulsed RF power to the process gas generates a plasma in the chamber; during the applying of the RF powe…
Who is the assignee on this patent?
Lam Res Corp
What technology area does this patent fall under?
Primary CPC classification H10P50/242. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 13 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 10 related publications on this page (citations in our corpus or others sharing the same primary CPC).