Photoresist-free photolithography, photoprocessing tools, and methods with VUV or deep-UV lamps

Patent metadata

Field	Value
Publication number	US-12523933-B2
Application number	US-201917268276-A
Country	US
Kind code	B2
Filing date	Aug 13, 2019
Priority date	Aug 14, 2018
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

A fabrication tool has at least one flat lamp photon source, or an array of flat lamps, that serve to non-thermally ablate polymer material from a surface. No photoresist is required and the desired photoablated pattern is determined by inserting a photolithographic mask between the lamp(s) and the surface to be processed. Methods of the invention pattern organic polymer and can pattern a substrate using a pattern established in an organic polymer layer on the substrate, and can also deposit materials in the pattern by breaking bonds in deposition precursors with photons from the microplasma array. Another method converts organic polymer material to have a hydrophylic surface. A tool of the invention can have width and depth comparable to a typical paperback book and a height comparable to a coffee cup.

First claim

The invention claimed is:

1 . A photolithography method, the method comprising:
providing an organic polymer; placing the organic polymer in a chamber; evacuating the chamber using a vacuum system to create a vacuum in the chamber or evacuating the chamber using the vacuum system to create a vacuum in the chamber and then providing an inert gas flow in the chamber or a static pressure of up to one atmosphere of inert gas in the chamber; providing at least one mask in a desired pattern to be created in the organic polymer; generating photons with a microplasma array flat lamp photon source; and directing the photons through the mask to non-thermally photoablate the desired pattern in the organic polymer, or to photochemically alter portions of the organic polymer for removal by a solvent followed by removal of the portions to form the desired pattern in the organic polymer.

2 . The method of claim 1 , wherein the organic polymer comprises a polymer sample to be patterned.

3 . The method of claim 1 , wherein the organic polymer comprises a layer on a material substrate.

4 . The method of claim 3 , wherein the organic polymer comprises a thin polymer film of poly(methyl-methacrylate)), another acrylic, CR 39, ABS, PET, or other polymer material such as a polycarbonate.

5 . The method of claim 1 , wherein the microplasma flat lamp photon source comprises a lamp generating photons having wavelengths of approximately 126 nm, 147 nm, 172 nm, or in the 160-170 nm or 180-200 nm wavelength ranges.

6 . The method of claim 1 , conducted in a single chamber at vacuum or with an inert N 2 or rare gas flow through the chamber, or a static pressure of one atmosphere of N 2 or rare gas in the chamber.

7 . The method of claim 1 , wherein the organic polymer comprises a layer on a material substrate, the method further comprising:
introducing deposition molecular precursors into a chamber containing the material substrate with the patterned thin film thereupon; and breaking bonds in the precursors with photons from the microplasma array flat lamp photon source to deposit a product of the precursors in the desired pattern on the material substrate.

8 . The method of claim 7 , conducted in a single chamber at vacuum or with an inert such as N 2 or a rare gas flow through the chamber, or a static pressure of one atmosphere of N 2 or rare gas in the chamber.

9 . The method of claim 7 , wherein the layer comprises Poly(methyl methacrylate)), another acrylic, CR 39, ABS, PET, or other organic material such as a polycarbonate.

10 . The method of claim 1 , wherein the microplasma flat lamp photon source comprises a lamp generating 172 nm photons and the method comprises generating photons with a second microplasma array flat lamp photon source emitting a wavelength different from that of the first photon source and emitting predominantly at 126 nm, 147 nm, 160-170 nm, 172 nm, 180-200 nm, 222 nm, 240-260 nm, and/or 308 nm.

11 . The method of claim 1 , wherein the organic polymer comprises a layer on a material substrate, the method conducted in a chamber not at vacuum but rather allowing for continuous gas flow into the chamber and over a mask proximate to the surface of the material substrate.

12 . The method of claim 1 , wherein the organic polymer comprises a layer on a material substrate, the method further comprising etching of the layer and/or the material substrate in an additional step using the mask or switching to a second mask, and providing a gas or gas mixture, such as a mixture of CCl 4 vapor and a rare gas such as Ar, to etch the material substrate.

13 . The method of claim 1 , further comprising transferring a pattern formed in the organic polymer to another material.

14 . The method of claim 13 , wherein the another material comprises a metal or a ceramic, and the method further comprises removal of the organic polymer after the metal or ceramic has been formed in the pattern.

15 . The method of claim 1 , wherein the organic polymer comprises a roll-to-roll material that is moved past the mask.

16 . The method of claim 1 , further comprising changing the orientation of the at least one mask or providing a second mask and then repeating the generating and directing to add complexity to the pattern.

17 . The method of claim 1 , further comprising loading the organic polymer into an e-beam lithography tool and adding smaller features to the pattern via e-beam lithography.

18 . The method of claim 1 , wherein the microplasma flat lamp photon source has an intensity of at least 15 mW/cm 2 .

19 . The method of claim 1 , comprising controlling a rate that the photons non-thermally ablate the desired pattern in the organic polymer by an exposure time of the directing and/or an intensity of the microplasma flat lamp photon source.

20 . The method of claim 1 , wherein the vacuum system comprises a turbomolecular pump and the evacuating removes O 2 from the chamber to a level that prevents interaction of the photons with O 2 to create O 3 .

Assignees

• Univ Illinois

Inventors

• Eden James Gary
• Sievers Dane
• Mironov Andrey
• Kim Jinhong

Classifications

• G03F7/203

  comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation · CPC title

• G03F7/2004 Primary

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• G03F7/039 Primary

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/2014

  Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame · CPC title