Resist composition and pattern forming process

Patent metadata

Field	Value
Publication number	US-12523932-B2
Application number	US-202217716256-A
Country	US
Kind code	B2
Filing date	Apr 8, 2022
Priority date	Apr 14, 2021
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

A resist composition comprising a sulfonium salt of a carboxylic acid having a nitro-substituted benzene ring is provided. The carboxylic acid is free of iodine and bromine, and when the benzene ring is fluorinated, the number of fluorine atoms is up to 3. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

First claim

The invention claimed is:

1 . A resist composition comprising a sulfonium salt of a carboxylic acid having a benzene ring substituted with at least one nitro group, wherein the carboxylic acid is free of iodine and bromine,
wherein the sulfonium salt has the formula (A):

wherein R 1 is each independently chlorine, hydroxy group, amino group, or a C 1 -C 20 hydrocarbyl group, C 1 -C 20 hydrocarbyloxy group, C 2 -C 20 hydrocarbylcarbonyloxy group, C 2 -C 20 hydrocarbyloxycarbonyl group, C 2 -C 20 hydrocarbyloxycarbonyloxy group, or C 1 -C 20 hydrocarbylsulfonyl group, which may contain chlorine, hydroxy, amino, ether bond or ester bond, or —N(R 1A )(R 1B ), —N(R 1C )—C(═O)—R 1D , —N(R 1C )—C(═O)—O—R 1D , or —N(R 1E )—S(═O) 2 —R 1F , R 1A and R 1B are each independently hydrogen or a C 1 -C 6 saturated hydrocarbyl group, R 1C and RIE are each independently hydrogen or a C 1 -C 6 saturated hydrocarbyl group which may contain halogen, hydroxy moiety, C 1 -C 6 saturated hydrocarbyloxy moiety, C 2 -C 6 saturated hydrocarbylcarbonyl moiety or C 2 -C 6 saturated hydrocarbylcarbonyloxy moiety, R 1D and R 1F are each independently a C 1 -C 16 aliphatic hydrocarbyl group, C 6 -C 14 aryl group or C 7 -C 15 aralkyl group, which may contain halogen, hydroxy moiety, C 1 -C 6 saturated hydrocarbyloxy moiety, C 2 -C 6 saturated hydrocarbylcarbonyl moiety or C 2 -C 6 saturated hydrocarbylcarbonyloxy moiety,
R 2 is fluorine,
R 3 to R 5 are each independently halogen or a C 1 -C 20 hydrocarbyl group which may contain a heteroatom, R 3 and R 4 may bond together to form a ring with the sulfur atom to which they are attached,
X is a single bond or a C 1 -C 20 divalent linking group which may contain an ether bond, carbonyl moiety, ester bond, amide bond, sultone ring, lactam ring, carbonate bond, halogen, hydroxy moiety or carboxy moiety,
m is an integer of 1 to 3, n1 is an integer of 0 to 3, n2 is 0, and 1≤m+n1+n2≤5.

2 . The resist composition of claim 1 wherein the sulfonium salt has the formula (A)-1:

wherein R 1 to R 5 , X, n1, and n2 are as defined above.

3 . The resist composition of claim 1 , further comprising an acid generator capable of generating a strong acid.

4 . The resist composition of claim 3 wherein the acid generator generates a sulfonic acid, imide acid or methide acid.

5 . The resist composition of claim 1 , further comprising an organic solvent.

6 . The resist composition of claim 1 , further comprising a base polymer.

7 . The resist composition of claim 6 wherein the base polymer comprises repeat units having the formula (a1) or repeat units having the formula (a2):

wherein R A is each independently hydrogen or methyl,
Y 1 is a single bond, phenylene group, naphthylene group, or a C 1 -C 12 linking group containing an ester bond and/or lactone ring,
Y 2 is a single bond or ester bond,
Y 3 is a single bond, ether bond or ester bond,
R 11 and R 12 are each independently an acid labile group,
R 13 is fluorine, trifluoromethyl, cyano or a C 1 -C 6 saturated hydrocarbyl group,
R 14 is a single bond or a C 1 -C 6 alkanediyl group in which some carbon may be replaced by an ether bond or ester bond,
a is 1 or 2, b is an integer of 0 to 4, and the sum of a+b is from 1 to 5.

8 . The resist composition of claim 7 which is a chemically amplified positive resist composition.

9 . The resist composition of claim 6 wherein the base polymer is free of an acid labile group.

10 . The resist composition of claim 9 which is a chemically amplified negative resist composition.

11 . The resist composition of claim 1 , further comprising a surfactant.

12 . The resist composition of claim 6 wherein the base polymer further comprises repeat units of at least one type selected from repeat units having the formulae (f1) to (f3):

wherein R A is each independently hydrogen or methyl,
Z 1 is a single bond, a C 1 -C 6 aliphatic hydrocarbylene group, phenylene, naphthylene, or a C 7 -C 18 group obtained by combining the foregoing, or —O—Z 11 —, —C(═O)—O—Z 11 — or —C(═O)—NH—Z 11 , Z 11 is a C 1 -C 6 aliphatic hydrocarbylene group, phenylene, naphthylene, or a C 7 -C 18 group obtained by combining the foregoing, which may contain a carbonyl moiety, ester bond, ether bond or hydroxy moiety,
Z 2 is a single bond or ester bond,
Z 3 is a single bond, —Z 31 —C(═O)—O—, —Z 31 —O— or —Z 31 —O—C(═O)—, Z 31 is a C 1 -C 12 hydrocarbylene group, phenylene group, or a C 7 -C 18 group obtained by combining the foregoing, which may contain a carbonyl moiety, ester bond, ether bond, iodine or bromine,
Z 4 is a methylene, 2,2,2-trifluoro-1,1-ethanediyl or carbonyl group,
Z 5 is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, trifluoromethyl-substituted phenylene, —O—Z 51 —, —C(═O)—O—Z 51 — or —C(═O)—NH—Z 51 , Z 51 is a C 1 -C 6 aliphatic hydrocarbylene group, phenylene, fluorinated phenylene, or trifluoromethyl-substituted phenylene group, which may contain a carbonyl moiety, ester bond, ether bond or hydroxy moiety,
R 21 to R 28 are each independently halogen or a C 1 -C 20 hydrocarbyl group which may contain a heteroatom, R 23 and R 24 , or R 26 and R 27 may bond together to form a ring with the sulfur atom to which they are attached, and
M − is a non-nucleophilic counter ion.

13 . A pattern forming process comprising the steps of applying the resist composition of claim 1 onto a substrate to form a resist film thereon, exposing the resist film to high-energy radiation, and developing the exposed resist film in a developer.

14 . The pattern forming process of claim 13 wherein the high-energy radiation is i-line of wavelength 365 nm, ArF excimer laser of wavelength 193 nm, or KrF excimer laser of wavelength 248 nm.

15 . The pattern forming process of claim 13 wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm.

Assignees

• Shinetsu Chemical Co

Inventors

• Hatakeyama Jun
• Ohashi Masaki

Classifications

• C07D333/76

  Dibenzothiophenes · CPC title

• C07C311/09

  the carbon skeleton being further substituted by at least two halogen atoms · CPC title

• C07C233/54

  having the carbon atom of the carboxamide group bound to a hydrogen atom or to a carbon atom of a saturated carbon skeleton · CPC title

• C07D327/08 Primary

  [b,e]-condensed with two six-membered carbocyclic rings · CPC title

• C07C317/44

  having sulfone or sulfoxide groups and carboxyl groups bound to the same carbon skeleton · CPC title