Protective coating

Patent metadata

Field	Value
Publication number	US-12521756-B2
Application number	US-202318487203-A
Country	US
Kind code	B2
Filing date	Oct 16, 2023
Priority date	Dec 13, 2016
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

A method for depositing a protective coating onto a substrate, wherein the protective coating comprises (i) a moisture-barrier layer which is in contact with the substrate and which comprises a first sub-layer, optionally one or more intermediate sub-layers, and a final sub-layer, (ii) a mechanical-protective layer which is inorganic, and (iii) a gradient layer interposing the moisture-barrier layer and the mechanical-protective layer.

First claim

What is claimed:

1 . A method of depositing a protective coating onto a substrate, wherein the depositing the protective coating comprises:
depositing a first sub-layer prepared from a first precursor mixture of an organosilicon compound and no, or substantially no, O 2 , N 2 O or NO 2 , and comprises one of H 2 , NH 3 , N 2 , Ar, He and/or Kr; and depositing one or more subsequent alternating layers of: a first intermediate sub-layer which is a hydrocarbon polymer of formula C m H n prepared by plasma-deposition of a second precursor mixture comprising a hydrocarbon compound of formula (X), and optionally NH 3 , N 2 O, N 2 , NO 2 , CH 4 , C 2 H 6 , C 3 H 6 and C 3 H 8 , He, Ar and/or Kr; the hydrocarbon compound of formula (X);

wherein:
Z 1 represents C 1 -C 3 alkyl or C 2 -C 3 alkenyl;
Z 2 represents hydrogen, C 1 -C 3 alkyl or C 2 -C 3 alkenyl;
Z 3 represents hydrogen, C 1 -C 3 alkyl or C 2 -C 3 alkenyl;
Z 4 represents hydrogen, C 1 -C 3 alkyl or C 2 -C 3 alkenyl;
Z 5 represents hydrogen, C 1 -C 3 alkyl or C 2 -C 3 alkenyl; and
Z 6 represents hydrogen, C 1 -C 3 alkyl or C 2 -C 3 alkenyl; and
a second intermediate sub-layer which is prepared by using a third precursor mixture of nitrogen-containing organosilicon compounds or an organosilicon with a nitrogen-containing co-precursor.

2 . The method according to claim 1 , wherein four to thirteen sub-layers are used.

3 . The method according to claim 1 , wherein the second precursor mixture contains two or more compounds of formula (X).

4 . The method according to claim 1 , wherein the third precursor mixture comprises compounds independently selected from the group consisting of hexamethyldisiloxane (HMDSO), tetramethyldisiloxane (TMDSO), 1,3-divinyltetramethyldisiloxane (DVTMDSO), hexavinyldisiloxane (HVDSO) allyltrimethylsilane, allyltrimethoxysilane (ATMOS), tetraethylorthosilicate (TEOS), trimethylsilane (TMS), triisopropylsilane (TiPS), trivinyl-trimethyl-cyclotrisiloxane (V3D3), tetravinyl-tetramethyl-cyclotetrasiloxane (V4D4), tetramethylcyclotetrasiloxane (TMCS), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisilazane (HMDSN), 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane, dimethylamino-trimethylsilane (DMATMS), bis(dimethylamino)dimethylsilane (BDMADMS) and tris(dimethylamino)methylsilane (TDMAMS).

5 . The method according to claim 1 , wherein the protective coating has a nano-hardness of at least 6 GPa.

6 . The method according to claim 1 , wherein the substrate is (i) the external casing of an electrical device, or (ii) a printed circuit board.

Assignees

• Hzo Inc

Inventors

• Singh Shailendra Vikram
• Aresta Gianfranco
• Hall Brooks Andrew Simon
• Woollard Siobhan Marie
• Hennighan Gareth

Classifications

• H05K2203/1338

  Chemical vapour deposition · CPC title

• H05K2203/1322

  Encapsulation comprising more than one layer · CPC title

• H05K2203/095

  Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes · CPC title

• H05K2201/09872

  Insulating conformal coating · CPC title

• H05K2201/0179

  Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor · CPC title