Corrugated metal oxide semiconductor transistor

Patent metadata

Field	Value
Publication number	US-12520542-B2
Application number	US-202217829009-A
Country	US
Kind code	B2
Filing date	May 31, 2022
Priority date	May 31, 2022
Publication date	Jan 6, 2026
Grant date	Jan 6, 2026

Abstract

A method forms a semiconductor device with a substrate including semiconductor material formed to include plural corrugation members, each member including a top surface, and a first and second sidewall extending from the top surface to a lower surface. The method forms a contiguous transistor source extending through a first volume of each of the corrugation members and a first lower surface volume and a contiguous transistor drain extending through a second volume of each of the corrugation members and a second lower surface volume. Both source and drain are formed by initially diffusing a dopant in a uniform manner normal to various portions, some non-coplanar, of the source and drain, respectively.

First claim

What is claimed is:

1 . A method of forming a semiconductor device, comprising:
providing a substrate including at least a portion of a semiconductor material; forming a plurality of corrugation members of the semiconductor material, each corrugation member in the plurality of corrugation members including a top surface, and a first and second sidewall extending from the top surface to a lower surface; forming a contiguous transistor drain extending through a first volume of each of the corrugation members and a first lower surface volume extending into the semiconductor material from the lower surface by initially diffusing a dopant in a uniform manner normal to a first portion of the top surface, a first portion of the first sidewall, a first portion of the second sidewall, and a first portion of the lower surface.

2 . The method of claim 1 , further comprising:
forming a contiguous transistor source extending through a second volume of each of the corrugation members and a second lower surface volume extending into the semiconductor material from the lower surface by initially diffusing a dopant in a uniform manner normal to a second portion of the top surface, a second portion of the first sidewall, a second portion of the second sidewall, and a second portion of the lower surface; and wherein: forming the contiguous transistor source diffuses to a same diffusion length at and normal from a respective midpoint of each of the second portion of the top surface, the second portion of the first sidewall, the second portion of the second sidewall, and the second portion of the lower surface; and forming the contiguous transistor drain diffuses to the same diffusion length at and normal from a respective midpoint of each of the first portion of the top surface, the first portion of the second sidewall, the first portion of the second sidewall, and the first portion of the lower surface.

3 . The method of claim 2 , wherein each respective midpoint is along a dimension extending from a first corrugation member of the plurality of corrugation members to a second corrugation member of the plurality of corrugation members, and halfway between opposing edges, in the dimension, of the respective surface.

4 . The method of claim 1 , wherein each of the steps of forming the contiguous transistor drain includes forming a masking stack including at least three masking layers.

5 . The method of claim 4 , wherein the masking stack includes a photoresist layer, a pattern transfer layer, and a pattern receiving layer.

6 . The method of claim 1 , further comprising:
in a first step, forming metalization using silicides adjacent selected portions of the top surface of each corrugation member corresponding to the contiguous transistor drain; and in a second step, forming metalization using conformal metal silicide film adjacent selected portions of the first and second sidewall of each corrugation member corresponding to the contiguous transistor drain.

7 . The method of claim 6 , wherein the silicides include self-aligned silicides.

8 . The method of claim 6 , wherein the first step and the second step occur separately.

9 . The method of claim 1 , further comprising forming metalization using conformal metal film adjacent selected portions of the first and second sidewall of each corrugation member corresponding to the contiguous transistor drain.

10 . A semiconductor device, comprising:
a substrate including at least a portion of a semiconductor material; a corrugation member, the corrugation member including a top surface of the semiconductor material, a first lateral portion extending from the top surface to a first corresponding lower surface of the semiconductor material, and a second lateral portion extending from the top surface to a second corresponding lower surface of the semiconductor material; a transistor body in the semiconductor material, the transistor body having a first conductivity type, the transistor body further including a first portion in the first corresponding lower surface and a first portion in the second corresponding lower surface; a transistor source in the semiconductor material, the transistor source having a second conductivity type complementary to the first conductivity type, the transistor source having a first diffusion length at a midpoint of a first portion aligned with the top surface, a second portion aligned with the first lateral portion, and a third portion aligned with the second lateral portion, the transistor source further including a second portion in the first corresponding lower surface and a second portion in the second corresponding lower surface; and a transistor drain in the semiconductor material, the transistor drain having the second conductivity type, the transistor drain further including a third portion in the first corresponding lower surface and a third portion in the second corresponding lower surface.

11 . The semiconductor device of claim 10 , further comprising a transistor drift region in the semiconductor material, the transistor drift region having a fourth portion aligned with each of the top surface, the first lateral portion, and the second lateral portion, the transistor drift region having a second diffusion length in a fourth portion in the first corresponding lower surface and a fourth portion in the second corresponding lower surface.

12 . The semiconductor device of claim 10 , further comprising:
first metal silicide conductors adjacent respective portions of the transistor source and the transistor drain in a first plane aligned with the top surface; and second metal silicide conductors adjacent respective portions of the transistor source and the transistor drain in a second plane aligned with the first lateral portion or a third plane aligned with the second lateral portion.

13 . The semiconductor device of claim 10 , wherein:
the transistor body has a second diffusion length at a midpoint of a fourth portion aligned with the top surface, and at a midpoint of a fifth portion aligned with the first lateral portion, and at a midpoint of a sixth portion aligned with the second lateral portion; and the transistor drain has the first diffusion length at a midpoint of a seventh portion aligned with the top surface, an eighth portion aligned with the first lateral portion, and a ninth portion aligned with the second lateral portion.

14 . The semiconductor device of claim 13 , wherein the corrugation member is a first corrugation member and the top surface is a first top surface, the semiconductor device further comprising:
a second corrugation member spaced apart from the first corrugation member, the second corrugation member including a second top surface of the semiconductor material, a third lateral portion extending from the second top surface to the first corresponding lower surface of the semiconductor material, and a fourth lateral portion extending from the second top surface to a third corresponding lower surface of the semiconductor material; and wherein:
the transistor source extends continuously from the first corrugation member to the second corrugation member, the transistor source having the first diffusion length at a midpoint of a tenth portion aligned with the second top surface, an eleventh portion aligned with the third lateral portion, and a twelfth portion aligned with the fourth lateral portion; and
the transistor drain extends continuously from the first corrugation member to the second corrugation member, the transistor drain having the first diffusion length at a midpoint of a thirteenth portion aligned with th

Assignees

• Texas Instruments Inc

Inventors

• Haynie Sheldon Douglas
• Sadovnikov Alexei
• Goodlin Brian

Classifications

• H10D30/6212

  having fin-shaped semiconductor bodies having non-rectangular cross-sections · CPC title

• H10D30/0281

  of lateral DMOS [LDMOS] FETs · CPC title

• H10D30/65

  Lateral DMOS [LDMOS] FETs · CPC title

• H10D30/024

  of fin field-effect transistors [FinFET] · CPC title

• H10D30/608

  having non-planar bodies, e.g. having recessed gate electrodes · CPC title