Metal oxide thin film transistor, array substrate and display device

Patent metadata

Field	Value
Publication number	US-12520536-B2
Application number	US-202218017649-A
Country	US
Kind code	B2
Filing date	Feb 17, 2022
Priority date	Feb 17, 2022
Publication date	Jan 6, 2026
Grant date	Jan 6, 2026

Abstract

The present disclosure provides a metal oxide thin film transistor, an array substrate and a display device. A metal oxide thin film transistor in the present disclosure includes: a substrate, a first metal oxide semiconductor layer on the substrate, and a second metal oxide semiconductor layer on a side of the first metal oxide semiconductor layer away from the substrate; a carrier mobility of the first metal oxide semiconductor layer is higher than that of the second metal oxide semiconductor layer; a material of the first metal oxide semiconductor layer includes: a first metal oxide doped with a rear earth element; a difference between an electronegativity of the rare earth element and an electronegativity of oxygen element is greater than or equal to a difference between an electronegativity of a metal element in the first metal oxide and the electronegativity of oxygen element.

First claim

What is claimed is:

1 . A metal oxide thin film transistor, comprising: a substrate, a first metal oxide semiconductor layer on the substrate, and a second metal oxide semiconductor layer on a side of the first metal oxide semiconductor layer away from the substrate; wherein a carrier mobility of the first metal oxide semiconductor layer is higher than a carrier mobility of the second metal oxide semiconductor layer;
a material of the first metal oxide semiconductor layer comprises: a first metal oxide doped with a rear earth element; and a difference between an electronegativity of the rare earth element and an electronegativity of oxygen element is greater than or equal to a difference between an electronegativity of a metal element in the first metal oxide and the electronegativity of oxygen element.

2 . The metal oxide thin film transistor according to claim 1 , wherein the rare earth element comprises at least one of tantalum, niobium, neodymium, zirconium.

3 . The metal oxide thin film transistor according to claim 1 , wherein the metal element in the first metal oxide comprises at least one of indium, gallium, zinc, tin.

4 . The metal oxide thin film transistor according to claim 1 , wherein an atomic percent of the rare earth element in the first metal oxide semiconductor layer is 0.01% to 5%.

5 . The metal oxide thin film transistor according to claim 4 , wherein the atomic percent of the rare earth element in the first metal oxide semiconductor layer is 0.15% or 0.2%.

6 . The metal oxide thin film transistor according to claim 1 , wherein a Hall mobility in the first metal oxide semiconductor layer is greater than or equal to 31 cm 2 /V·s.

7 . The metal oxide thin film transistor according to claim 1 , wherein a concentration of carriers in the first metal oxide semiconductor layer is greater than or equal to 3.5×E18 cm −3 .

8 . The metal oxide thin film transistor according to claim 1 , wherein an etching slope angle of the first metal oxide semiconductor layer is 40 degrees to 60 degrees.

9 . The metal oxide thin film transistor according to claim 8 , wherein etched side faces of the first metal oxide semiconductor layer and the second metal oxide semiconductor layer are in contact, and the etching slope angle of the first metal oxide semiconductor layer is equal to an etching slope angle of the second metal oxide semiconductor layer.

10 . The metal oxide thin film transistor according to claim 1 , wherein a metal element in the second metal oxide comprises at least one of indium, gallium, zinc, tin.

11 . An array substrate, comprising the metal oxide thin film transistor according to claim 1 .

12 . A display device, comprising the array substrate according to claim 11 .

Assignees

• Boe Technology Group Co Ltd

Inventors

• He Jiayu
• Zhao Kun
• Qu Yan
• Lei Liping
• Ning ce
• Li Zhengliang
• Hu hehe

Classifications

• H10D86/423 Primary

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/67

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title