Conformal power delivery structures of 3D stacked die assemblies

Patent metadata

Field	Value
Publication number	US-12519073-B2
Application number	US-202117485235-A
Country	US
Kind code	B2
Filing date	Sep 24, 2021
Priority date	Sep 24, 2021
Publication date	Jan 6, 2026
Grant date	Jan 6, 2026

Abstract

A conformal power delivery structure, a three-dimensional (3D) stacked die assembly, a system including the 3D stacked die assembly, and a method of forming the conformal power delivery structure. The power delivery structure includes a package substrate, a die adjacent to and electrically coupled to the package substrate; a first power plane adjacent the upper surface of the package substrate and electrically coupled thereto; a second power plane at least partially within recesses defined by the first power plane and having a lower surface that conforms with the upper surface of the first power plane; and a dielectric material between the first power plane and the second power plane.

First claim

The invention claimed is:

1 . A conformal power delivery structure comprising:
a package substrate; a die adjacent to and electrically coupled to an upper surface of the package substrate;
a first power plane adjacent the upper surface of the package substrate and electrically coupled thereto, the first power plane further comprising metal and defining one or more recesses therein;
a second power plane comprising metal, the second power plane at least partially within the one or more recesses of the first power plane and having a lower surface that conforms with an upper surface of the first power plane; and
a dielectric material between the first power plane and the second power plane.

2 . The conformal power delivery structure of claim 1 , wherein the first power plane corresponds to one or more first electrical pathways to the package substrate, and the second power plane corresponds to one or more second electrical pathways to the package substrate.

3 . The conformal power delivery structure of claim 2 , wherein the first power plane includes one or more interconnects electrically coupled to the upper surface of the package substrate, and one or more vias extending from at least some of the one or more interconnects away from the upper surface of the package substrate.

4 . The conformal power delivery structure of claim 1 , wherein the first power plane and the second power plane are co-planar with one another in areas defined by the one or more recesses.

5 . The conformal power delivery structure of claim 1 , wherein the second power plane has a granular microstructure including randomly distributed particles presenting substantially non-linear particle-to-particle boundaries with one another.

6 . The conformal power delivery structure of claim 5 , wherein the randomly distributed particles have sizes ranging from about 10 microns to about 100 microns.

7 . The conformal power delivery structure of claim 5 , wherein the granular microstructure has a maximum porosity of about 5%.

8 . The conformal power delivery structure of claim 5 , further including a buffer layer between the second power plane and at least one of the package substrate and the first power plane, wherein an interface between the buffer layer and second power plane has a non-flat configuration as compared with an interface between the first power plane and the package substrate, wherein some particles of the randomly distributed particles of the second power plane are at least in part embedded within indentations of the buffer layer.

9 . The conformal power delivery structure of claim 8 , wherein the buffer layer includes at least one of indium, silver, gold, tin, lead, titanium, nickel, vanadium, or alloys thereof.

10 . The conformal power delivery structure of claim 1 , further including a thermomechanical buffer material between the die and the second power plane, the thermomechanical buffer material having a Young's modulus less than about 10 gigapascals.

11 . The conformal power delivery structure of claim 10 , wherein the thermomechanical buffer material includes epoxy.

12 . A three-dimensional stacked die assembly including:
a package substrate; a stack of material levels disposed above one another on the package substrate, the stack of material levels including a first level adjacent an upper surface of the package substrate, and a second level adjacent an upper surface of the first level, wherein:
the first level includes:
a base die adjacent to and electrically coupled to an upper surface of the package substrate;
a first power plane adjacent the upper surface of the package substrate and electrically coupled thereto, the first power plane further comprising metal and defining one or more recesses therein;
a second power plane comprising metal, the second power plane at least partially within the one or more recesses of the first power plane and having a lower surface that conforms with an upper surface of the first power plane; and
a dielectric material between the first power plane and the second power plane; and

the second level includes one or more top dies electrically coupled to the package substrate.

13 . The three-dimensional stacked die assembly of claim 12 , wherein the one or more top dies are embedded in a molded compound.

14 . The three-dimensional stacked die assembly of claim 12 , wherein the second power plane extends to the second level such that the one or more top dies are embedded in the second power plane.

15 . The three-dimensional stacked die assembly of claim 14 , further including:
a first buffer layer between the second power plane and at least one of the package substrate and the first power plane; and a second buffer layer between the second power plane and upper surfaces of the one or more top dies, wherein: an interface between the first buffer layer and the second power plane, and an interface between the second buffer layer and the second power plane both have a non-flat configuration as compared with an interface between the first power plane and the package substrate, wherein some particles of the second power plane are at least in part embedded within indentations of the first buffer layer and the second buffer layer.

16 . The three-dimensional stacked die assembly of claim 12 , wherein the one or more top dies include a single die extending through an entirety of the second level.

17 . A system including:
one or more processing units; a memory coupled to the one or more processing units; and a three-dimensional stacked die assembly including:
a package substrate;
a stack of material levels disposed above one another on the package substrate, the stack of material levels including a first level adjacent an upper surface of the package substrate, and a second level adjacent an upper surface of the first level, wherein:
the first level includes:
a base die adjacent to and electrically coupled to an upper surface of the package substrate;
a first power plane adjacent the upper surface of the package substrate and electrically coupled thereto, the first power plane further comprising metal and defining one or more recesses therein;
a second power plane comprising metal, the second power plane at least partially within the one or more recesses of the first power plane and having a lower surface that conforms with an upper surface of the first power plane; and
a dielectric material between the first power plane and the second power plane; and

the second level includes one or more top dies electrically coupled to the package substrate.

18 . The system of claim 17 , wherein the one or more top dies are embedded in a molded compound.

19 . The system of claim 17 , wherein the second power plane extends to the second level such that the one or more top dies are embedded in the second power plane.

20 . The system of claim 17 , wherein the one or more top dies include a single die extending through an entirety of the second level.

Assignees

• Intel Corp
• Inte Corp

Inventors

• Eid Feras
• Aleksov Aleksandar
• Elsherbini Adel
• Braunisch Henning

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W74/40

  characterised by their materials · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W70/6528

  of the portions that connect to chips, wafers or package parts · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title