Luminescent nanostrucure, and color conversion panel and electronic device including the same

Patent metadata

Field	Value
Publication number	US-12517291-B2
Application number	US-202217687448-A
Country	US
Kind code	B2
Filing date	Mar 4, 2022
Priority date	Mar 5, 2021
Publication date	Jan 6, 2026
Grant date	Jan 6, 2026

Abstract

A color conversion panel includes a color conversion layer including a color conversion region, and optionally, a partition wall defining the region of the color conversion layer. The color conversion region includes a first region corresponding to a green pixel, and the first region includes a first composite that is configured to emit a green light and includes a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. and at least a portion of surfaces of the luminescent nanostructures includes the second semiconductor nanocrystal. The emitted green light has a full width at half maximum of a maximum luminescent peak of less than or equal to about 42 nm.

First claim

What is claimed is:

1 . A color conversion panel comprising:
a color conversion layer including a color conversion region, and optionally, a partition wall defining each region of the color conversion layer, wherein the color conversion region comprise a first region corresponding to a green pixel, and the first region comprises a first composite that is configured to emit a green light and includes a matrix and a plurality of luminescent nanostructures dispersed in the matrix, wherein the luminescent nanostructures comprise a first semiconductor nanocrystal comprising a Group III-V compound and a second semiconductor nanocrystal comprising a zinc chalcogenide, the Group III-V compound comprises indium, phosphorus, and optionally, zinc, and the zinc chalcogenide comprises zinc, selenium, and sulfur, wherein a mole ratio of sulfur to selenium (S:Se) is greater than or equal to about 2:1 and less than or equal to about 4.5:1, wherein the luminescent nanostructures do not comprise cadmium, wherein at least a portion of surfaces of the luminescent nanostructures comprises the second semiconductor nanocrystal, and wherein a full width at half maximum of a maximum luminescent peak of the green light is less than or equal to about 42 nanometers.

2 . The color conversion panel of claim 1 , wherein the luminescent nanostructure exhibits an ultraviolet-visible absorption spectrum that has a positive differential coefficient value at 450 nm of greater than or equal to about 0.001 and less than or equal to about 0.03.

3 . The color conversion panel of claim 1 , wherein in an UV-Vis absorption spectrum of the luminescent nanostructures, a ratio of an absorbance at a first absorption peak wavelength with respect to an absorbance at a wavelength of about 350 nm is greater than or equal to about 0.2:1 and less than or equal to about 0.4:1, or
a valley depth (VD) defined by the following equation is greater than or equal to about 0.4:
1−(Abs valley /Abs first )=VD

wherein, Abs first corresponds to an absorption rate at the first absorption peak, and Abs valley corresponds to an absorption rate at the lowest point of the valley adjacent to the first absorption peak.

4 . The color conversion panel of claim 1 , wherein the plurality of the luminescent nanostructures comprises a mole ratio of sulfur to selenium of greater than or equal to about 2.0:1 and less than or equal to about 3.5:1.

5 . The color conversion panel of claim 1 , wherein the plurality of the luminescent nanostructures comprises a mole ratio of phosphorus to indium of greater than or equal to about 0.7:1 and less than or equal to about 1.5:1.

6 . The color conversion panel of claim 1 , wherein the first composite exhibits a QY loss percentage of less than about 14%, at the irradiation of incident light of a wavelength of about 450 nm to about 460 nm, wherein the QY loss percentage is defined by the following equation:
QY loss (%)=[1−(QY at 80° C./QY at room temperature)]×100, wherein
QY at 80° C.: a quantum yield of a composite at 80° C., and QY at room temperature: a quantum yield of a composite at room temperature.

7 . The color conversion panel of claim 1 , wherein as the first composite is irradiated with an incident light, the first composite is configured to exhibit a tail percentage defined by the following equation of less than or equal to about 15%:
A tail percentage (%)=[ S 2 /S 1]×100,
wherein S1: a total area of a maximum photoluminescent peak of the first composite, and S2: an area of the maximum photoluminescent peak of the first composite in a wavelength region of greater than or equal to about 580 nm.

8 . The color conversion panel of claim 1 , wherein as the first composite is irradiated with an incident light, the first composite is configured to exhibit a photoconversion of greater than or equal to about 33%, as defined by the following equation:
( A/B )×100=photoconversion (%),
wherein A: light dose of green light emitted from the composite, and B: light dose of the incident light.

9 . The color conversion panel of claim 1 , wherein at a surface of the luminescent nanostructures, a mole ratio of selenium to a sum of selenium and sulfur is greater than 0 and less than or equal to about 0.3:1.

10 . A population of luminescent nanostructures,
wherein the luminescent nanostructures comprise a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, wherein the Group III-V compound comprises indium, phosphorus, and optionally zinc, and the zinc chalcogenide comprises zinc, selenium, and sulfur, wherein a mole ratio of sulfur to selenium (S:Se) is greater than or equal to about 2:1 and less than or equal to about 4.5:1, wherein the luminescent nanostructures do not include cadmium, wherein at least a portion of a surface of each of the luminescent nanostructures comprises the second semiconductor nanocrystal, and wherein the luminescent nanostructures are configured to emit green light, and wherein the luminescent nanostructures are configured to exhibit an ultraviolet-visible absorption spectrum having a positive differential coefficient value at 450 nm, and wherein in the UV-Vis absorption spectrum of the luminescent nanostructures, a ratio of an absorbance at a first absorption peak wavelength with respect to an absorbance at a wavelength of about 350 nm is greater than or equal to about 0.2:1.

11 . The population of claim 10 , wherein the luminescent nanostructures further comprise an organic ligand bound to a surface of the nanostructures.

12 . The population of claim 10 , wherein the differential coefficient value is greater than or equal to about 0.001 and less than or equal to about 0.03; or
wherein a ratio of an absorbance at a first absorption peak wavelength with respect to an absorbance at a wavelength of 350 nm is less than or equal to about 0.4:1.

13 . The population of claim 10 , wherein the luminescent nanostructures show a quantum efficiency of greater than or equal to about 80%, and a maximum photoluminescent peak of the luminescent nanostructure has a full width at half maximum of greater than or equal to about 45 nm.

14 . The population of claim 10 , wherein the luminescent nanostructures have a core shell structure including a core and a single shell disposed on the core,
wherein the core comprises the first semiconductor nanocrystal, wherein the single shell comprises the second semiconductor nanocrystal.

15 . The population of claim 14 , wherein an outermost layer of the single shell consists of the second semiconductor nanocrystal.

16 . The population of claim 15 , wherein the luminescent semiconductor nanocrystals further comprise an organic ligand disposed on or bound to the outermost layer of the single shell.

17 . The population of claim 10 , wherein at a surface of the luminescent nanostructures, a mole ratio of selenium to a sum of selenium and sulfur is greater than 0 and less than or equal to about 0.3:1.

18 . The population of claim 10 , wherein the luminescent nanostructures comprise a mole ratio of sulfur to selenium of greater than or equal to about 0.5:1 2:1 and less than or equal to about 3.5:1, and
wherein the luminescent nanostructures comprise a mole ratio of phosphorus to indium of greater than or equal to about 0.7:1 and less than or equal to about 1.5:1.

19 . An ink composition comprising a liquid vehicle; and the population of luminescent nanostructures of c

Assignees

• Samsung Electronics Co Ltd
• Samsung Display Co Ltd

Inventors

• Kim Taekhoon
• Kim Tae Gon
• Yang Hyeyeon
• Lee Jongmin
• Jun Shin Ae
• Moon Deuk Kyu
• Jo A Ra
• Ahn Jooyeon
• Won Nayoun
• Lim Mi Hye

Classifications

• H10K59/38

  comprising colour filters or colour changing media [CCM] · CPC title

• G02B1/002 Primary

  made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• G02F2203/055

  wavelength filtering · CPC title

• G02F2203/34

  Colour display without the use of colour mosaic filters · CPC title