Semiconductor nanocrystal, and method of preparing the same

Patent metadata

Field	Value
Publication number	US-10170648-B2
Application number	US-201314039788-A
Country	US
Kind code	B2
Filing date	Sep 27, 2013
Priority date	Oct 26, 2012
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSe x S (1-x) , wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.

First claim

What is claimed is:

1. A nanocrystal comprising:
a core consisting of a Group III element, P, and a Group II element; and
a shell overcoating the core and comprising ZnSeS multi-layers consisting of Zn, Se, and S, wherein a single monolayer directly disposed on a surface of the core in the shell comprises a compound of the formula ZnSe x S (1-x) ,
wherein an average ratio of x:(1−x) in the single monolayer ranges from about 5:1 to about 20:1,
wherein the shell further comprises at least two additional single monolayers each comprising a compound of the formula ZnSe y S (1-y) , wherein 0<y≤1, wherein the at least two additional single monolayers are disposed on the single monolayer comprising the compound of the formula ZnSe x S (1-x) ,
wherein the at least two additional single monolayers have a Se:S concentration ratio gradient between the at least two additional single monolayers,
wherein the Se:S concentration ratio gradient comprises an increasing concentration of Se and a decreasing concentration of S in a direction from the core to a predetermined single monolayer; and a decreasing concentration of Se and an increasing concentration of S in a direction from the predetermined single monolayer to an outermost single monolayer, wherein the predetermined single monolayer is located between the single monolayer directly disposed on the surface of the core and the outermost single monolayer, and
wherein the nanocrystal has a luminous efficiency “QY” of greater than 70 percent.

2. The nanocrystal of claim 1 , wherein the average ratio of x:(1−x) ranges from about 9:1 to about 12:1.

3. The nanocrystal of claim 1 , wherein the Group II metal is selected from Zn, Cd, Hg, Mg, and a combination thereof.

4. The nanocrystal of claim 3 , wherein the Group II metal is Zn.

5. The nanocrystal of claim 1 , wherein the shell comprises an outermost layer comprising ZnS.

6. The nanocrystal of claim 1 , wherein the core comprises InZnP.

7. The nanocrystal of claim 1 , wherein a photoluminescence of the nanocrystal has a full width at half maximum of less than or equal to about 45 nanometers.

8. The nanocrystal of claim 1 , wherein the nanocrystal has a diameter of greater than or equal to about 6 nanometers.

9. The nanocrystal of claim 1 , wherein the nanocrystal has a light emitting region in a photoluminescence spectrum of about 500 nanometers to about 750 nanometers.

10. The nanocrystal of claim 1 , wherein the nanocrystal has a photoluminescence emission peak at a wavelength ranging from 535 nanometers to 545 nanometers.

11. A light emitting device comprising the nanocrystal according to claim 1 .

12. The light emitting device of claim 11 , wherein the light emitting device is a display, a sensor, a photodetector, a solar cell, a hybrid composite, or a bio-labeling device.

13. A nanocrystal comprising:
a core consisting of a Group III element, P, and a Group II element; and
a shell overcoating the core and comprising ZnSeS multi-layers consisting of Zn, Se, and S, wherein a first ZnSeS layer of the ZnSeS multi-layers comprises a compound of the formula ZnSe x S (1-x) and is disposed directly on a surface of the core,
wherein an average ratio of x:(1−x) in the first ZnSeS layer ranges from about 5:1 to about 20:1,
wherein the nanocrystal has a luminous efficiency “QY” of greater than 70 percent,
wherein the ZnSeS multi-layers of the shell comprise a second ZnSeS layer, and
wherein a Se:S concentration ratio gradient between the first ZnSeS layer and the second ZnSeS layer comprises an increasing concentration of Se and a decreasing concentration of S in a direction from the core to the second ZnSeS layer.

14. The nanocrystal of claim 13 , further comprising at least one additional ZnSeS layer between the first ZnSeS layer and the second ZnSeS layer.

15. The nanocrystal of claim 14 , further comprising a third ZnSeS layer, wherein the second ZnSeS layer is between the first ZnSeS layer and the third ZnSeS layer, and
wherein a Se:S concentration ratio gradient between the second ZnSeS layer and the third ZnSeS layer comprises a decreasing concentration of Se and an increasing concentration of S in a direction from the second ZnSeS layer to the third ZnSeS layer.

16. The nanocrystal of claim 15 , further comprising at least one additional ZnSeS layer between the second ZnSeS layer and the third ZnSeS layer.

17. The nanocrystal of claim 16 , wherein the third ZnSeS layer is an outermost ZnSeS layer of the ZnSeS multi-layers of the shell.

18. A method of preparing a nanocrystal comprising a core comprising a Group III element, P, and a Group II element, and a shell comprising a single monolayer formed on a surface of the core, the method comprising:
providing a nanocrystal core comprising a Group III element, P, and a Group II element,
contacting the nanocrystal core with a precursor of Zn, Se, and S to form the shell overcoating the core, wherein a single monolayer directly disposed on a surface of the nanocrystal core in the shell comprises a compound of the formula ZnSe x S (1-x) , and
forming at least two additional single monolayers each comprising a compound of the formula ZnSe y S (1-y) , wherein 0≤y≤1, wherein the at least two additional single monolayers are disposed on the single monolayer comprising a compound of the formula ZnSe x S (1-x) and prepare the nanocrystal,
wherein forming the at least two additional single monolayers comprises introducing an additional Zn, Se and S precursor in a mole ratio such that the at least two additional single monolayers have a Se: S concentration ratio gradient between the at least two additional single monolayers,
wherein the Se:S concentration ratio gradient comprises an increasing concentration of Se and a decreasing concentration of S in a direction from the core to a predetermined single monolayer; and a decreasing concentration of Se and an increasing concentration of S in a direction from the predetermined single monolayer to an outermost single monolayer, wherein the predetermined single monolayer is located between the single monolayer directly disposed on the surface of the core and the outermost single monolayer,
wherein the precursor of Zn, Se, and S is present in an amount such that an average mole ratio of Se: S in the single monolayer directly disposed on the surface of the nanocrystal core ranges from about 5:1 to about 20:1, and
wherein the nanocrystal has a luminous efficiency “QY” of greater than 70 percent.

19. The method of claim 18 , wherein the Zn, Se, and S precursors are present in a mole ratio of about 1:2 to about 60:1 to form the single monolayer having a Se:S mole ratio of from about 5:1 to about 20:1.

20. The method of claim 18 , further comprising forming an outermost layer comprising ZnS.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jun Shin Ae
• Jang Eun Joo
• Kwon Soo Kyung
• Kim Taek Hoon
• Lee Won Joo

Classifications

• H10P14/20 Primary

  of semiconductor materials · CPC title

• Y10S977/89

  Deposition of materials, e.g. coating, cvd, or ald · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• H01L31/0304

  Electricity · mapped topic

• H01L31/0296 Primary

  Electricity · mapped topic