Method and system for depositing transition metal carbide

Patent metadata

Field	Value
Publication number	US-12509765-B2
Application number	US-202418438765-A
Country	US
Kind code	B2
Filing date	Feb 12, 2024
Priority date	Feb 15, 2023
Publication date	Dec 30, 2025
Grant date	Dec 30, 2025

Abstract

The present disclosure relates to methods and apparatuses for depositing transition metal carbide-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal carbide-containing material on the substrate. The second precursor comprises a cyclic diene compound comprising a substituent comprising metalloid.

First claim

The invention claimed is:

1 . A method for forming a layer comprising transition metal carbide on a substrate, the method comprising:
providing a substrate into a reaction chamber; executing at least one deposition cycle, wherein the at least one deposition cycle comprises: providing a transition metal halide precursor in vapor phase into a reaction chamber; and providing a second precursor in vapor phase into a reaction chamber; to form a layer comprising transition metal carbide on a substrate, wherein the second precursor comprises a cyclic diene compound comprising a substituent comprising metalloid, and wherein the second precursor is a carbon donor.

2 . The method according to claim 1 , wherein the transition metal halide precursor comprises a transition metal selected from the group consisting of Group IV to VIII transition metals.

3 . The method according to claim 1 , wherein the transition metal halide precursor comprises a transition metal selected from the group consisting of molybdenum, chromium, tungsten, nickel, cobalt, niobium, copper, titanium, palladium, platinum, zirconium, hafnium, vanadium, tantalum, manganese, rhodium, iron, iridium, and rhenium.

4 . The method according to claim 1 , wherein the transition metal halide precursor comprises a transition metal selected from the group consisting of the Group VI transition metals.

5 . The method according to claim 1 , wherein the transition metal halide precursor consists of only transition metal and halogen.

6 . The method according to claim 1 , wherein the halogen in the transition metal halide precursor is selected from the group consisting of chlorine, iodine, fluorine, and bromine.

7 . The method according to claim 1 , wherein the transition metal halide precursor comprises molybdenum pentachloride or niobium pentafluoride.

8 . The method of claim 1 , wherein the second precursor is a reducing agent.

9 . The method of claim 1 , wherein the substituent comprising metalloid is a trialkyl metalloid.

10 . The method of claim 1 , wherein the metalloid of the second precursor is germanium or silicon.

11 . The method of claim 1 , wherein the cyclic diene compound is a five or six membered cyclic diene.

12 . The method of claim 1 , wherein the second precursor comprises a cyclohexadiene compound of formula (I),

wherein M is either Ge or Si, each of Z 1 and Z 2 is independently selected from CR 11 and N, and each of R 1 to R 11 is independently H, C1 to C7 linear or branched alkyl, C6 to C10 aryl, or C6 to C14 heteroaryl.

13 . The method of claim 12 , wherein R 11 is H.

14 . The method of claim 12 , wherein each of R 7 to R 10 is independently selected from the group consisting of H, C1 to C4 linear and branched alkyl, and phenyl.

15 . The method of claim 14 , wherein all of R 7 to R 10 are H.

16 . The method of claim 12 , wherein each of R 1 to R 6 is independently selected from the group consisting of H, methyl, ethyl, n-propyl, and isopropyl.

17 . The method of claim 16 , wherein all of R 1 to R 6 are methyl.

18 . The method of claim 1 , wherein the second precursor comprises a cyclohexadiene compound of formula (II),

wherein M is either Ge or Si, each of Z 1 and Z 2 is independently selected from CR 15 and N, and each of R 1 to R 15 is independently H, C1 to C7 linear or branched alkyl, C6 to C10 aryl or C6 to C14 heteroaryl.

19 . The method of claim 18 , wherein R 15 is H.

20 . The method of claim 18 , wherein each of R 7 to R 14 is independently selected from the group consisting of H, C1 to C4 linear and branched alkyl, and phenyl.

21 . The method of claim 20 , wherein all of R 7 to R 14 are H.

22 . The method of claim 18 , wherein each of R 1 to R 6 is independently selected from the group consisting of H, methyl, ethyl, n-propyl, and isopropyl.

23 . The method of claim 22 , wherein all of R 1 to Re are methyl.

24 . The method of claim 1 , wherein the second precursor is selected from the group consisting of 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine, 1,4-bis(trimethylsilyl)-1,4-dihydropyrazine, 1,1′-bis(trimethylsilyl)-1,1′-dihydro-4,4′-bipyridine, and 1,1′-bis(trimethylgermyl)-1,1′-dihydro-4,4′-bipyridine.

Assignees

• Asm Ip Holding Bv

Inventors

• Hatanpää Timo
• Ruiz Y Kärkkäinen Paloma
• Ritala Mikko
• Vihervaara Anton
• Putkonen Matti

Classifications

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/32 Primary

  Carbides · CPC title

• C23C16/45523

  Pulsed gas flow or change of composition over time · CPC title

• C23C16/08 Primary

  from metal halides · CPC title