Pressure detection device and manufacturing method

Patent metadata

Field	Value
Publication number	US-12504340-B2
Application number	US-202318323392-A
Country	US
Kind code	B2
Filing date	May 24, 2023
Priority date	Jul 8, 2022
Publication date	Dec 23, 2025
Grant date	Dec 23, 2025

Abstract

Provided is a pressure detection device including: a semiconductor substrate having an upper surface; a bulk region of a first conductivity type provided in the semiconductor substrate; a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate; a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region; and a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region.

First claim

What is claimed is:

1 . A pressure detection device comprising:
a semiconductor substrate having an upper surface; a bulk region of a first conductivity type provided in the semiconductor substrate; a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate; a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region; and a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region.

2 . The pressure detection device according to claim 1 , wherein
the first well region and the first low-concentration region each have a concentration peak in a doping concentration distribution in a depth direction of the semiconductor substrate.

3 . The pressure detection device according to claim 1 , wherein
a doping concentration distribution in a depth direction of the semiconductor substrate has:
a concentration peak disposed in the first well region; and
an inflection point disposed between the concentration peak and the bulk region, and
the first low-concentration region is a region between the inflection point and the bulk region.

4 . The pressure detection device according to claim 1 , wherein
a maximum value of a doping concentration in the first well region is 1×10 15 /cm 3 or more and 1×10 17 /cm 3 or less, and a maximum value of the doping concentration in the first low-concentration region is 1×10 13 /cm 3 or more and 1×10 15 /cm 3 or less.

5 . The pressure detection device according to claim 1 , wherein
a length of the first low-concentration region in a depth direction of the semiconductor substrate is larger than a length of the first well region in the depth direction.

6 . The pressure detection device according to claim 1 , wherein
a width of the first low-concentration region is larger than a width of the first well region in a direction perpendicular to a depth direction of the semiconductor substrate.

7 . The pressure detection device according to claim 2 , wherein
a depletion layer extending from a pn junction between the first low-concentration region and the bulk region does not reach the concentration peak of the first well region in a state where a rated voltage is applied to the semiconductor substrate.

8 . The pressure detection device according to claim 1 , further comprising:
a source region and a drain region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate; a second well region of the second conductivity type provided between the source region and the drain region, and the bulk region; and a second low-concentration region of the second conductivity type provided between the second well region and the bulk region and having a lower concentration than the second well region.

9 . The pressure detection device according to claim 1 , wherein
the piezo-resistive region has a plurality of extending portions having a longitudinal length in a first direction on the upper surface of the semiconductor substrate, the pressure detection device has one or more separation regions of the second conductivity type which are provided between the extending portions and has a higher concentration than the bulk region, and each of the separation regions is in contact with two adjacent extending portions.

10 . The pressure detection device according to claim 1 , wherein
the piezo-resistive region has:
a high-concentration resistance portion of a first conductivity type in contact with the upper surface of the semiconductor substrate; and
a low-concentration resistance portion of the first conductivity type which is provided between the high-concentration resistance portion and the first well region and has a lower concentration than the high-concentration resistance portion.

11 . The pressure detection device according to claim 8 , wherein
the source region has:
a high-concentration source portion of the first conductivity type in contact with the upper surface of the semiconductor substrate; and
a low-concentration source portion of the first conductivity type which is provided between the high-concentration source portion and the second well region and has a lower concentration than the high-concentration source portion, and
the drain region has:
a high-concentration drain portion of the first conductivity type in contact with the upper surface of the semiconductor substrate; and
a low-concentration drain portion of the first conductivity type which is provided between the high-concentration drain portion and the second well region and has a lower concentration than the high-concentration drain portion.

12 . The pressure detection device according to claim 1 , further comprising
a conductive shield film which is disposed above the upper surface of the semiconductor substrate and configured to cover at least a part of the piezo-resistive region.

13 . A manufacturing method of a pressure detection device, wherein
the pressure detection device includes:
a semiconductor substrate having an upper surface and a lower surface;
a bulk region of a first conductivity type provided in the semiconductor substrate;
a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate;
a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region; and
a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region, and
the first well region and the first low-concentration region are formed by separately implanting ions into each of a position where the first well region is to be formed and a position where the first low-concentration region is to be formed.

14 . The pressure detection device according to claim 2 , wherein
a maximum value of a doping concentration in the first well region is 1×10 15 /cm 3 or more and 1×10 17 /cm 3 or less, and a maximum value of the doping concentration in the first low-concentration region is 1×10 13 /cm 3 or more and 1×10 15 /cm 3 or less.

15 . The pressure detection device according to claim 3 , wherein
a maximum value of a doping concentration in the first well region is 1×10 15 /cm 3 or more and 1×10 17 /cm 3 or less, and a maximum value of the doping concentration in the first low-concentration region is 1×10 13 /cm 3 or more and 1×10 15 /cm 3 or less.

16 . The pressure detection device according to claim 2 , wherein
a length of the first low-concentration region in a depth direction of the semiconductor substrate is larger than a length of the first well region in the depth direction.

17 . The pressure detection device according to claim 3 , wherein
a length of the first low-concentration region in a depth direction of the semiconductor substrate is larger than a length of the first well region in the depth direction.

18 . The pressure detection device according to claim 2 , wherein
a width of the first low-concentration region is larger than a width of the first well region in a direction perpendicular to a depth direction of the semiconductor substrate.

19 . The pressure detection device according to claim 3 , wherein
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Assignees

• Fuji Electric Co Ltd

Inventors

• Ito Yuichi
• Nishikawa Mutsuo

Classifications

• H10N30/04

  Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning · CPC title

• G01L2009/0066

  Mounting arrangements of diaphragm transducers; Details thereof, e.g. electromagnetic shielding means · CPC title

• H10D48/50

  Devices controlled by mechanical forces, e.g. pressure · CPC title

• H10D62/60

  Impurity distributions or concentrations · CPC title

• G01L9/0042

  Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title