Chemical/physical phenomenon detecting device and method of producing the same

US10031101B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10031101-B2
Application numberUS-201514885240-A
CountryUS
Kind codeB2
Filing dateOct 16, 2015
Priority dateOct 20, 2014
Publication dateJul 24, 2018
Grant dateJul 24, 2018

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

An ion sensor is configured such that part of a P well on which part a sensing section is provided is different, in dopant concentration, from the other part of the P well so that electric charges are injected merely to the sensing section in a state where a voltage is applied to an N-type substrate.

First claim

Opening claim text (preview).

The invention claimed is: 1. An ion concentration sensor comprising: a semiconductor substrate; a sensing section in which electric charges, used to detect an ion concentration, is accumulated; an electric charge transfer section which transfers the electric charges accumulated in the sensing section; an electric charge detecting section which detects an amount of the electric charges that have been transferred; and an ion sensitive film which changes, depending on the ion concentration, the amount of the electric charges to be accumulated in the sensing section, the sensing section, the electric charge transfer section, and the electric charge detecting section being provided on a diffusion region, on the semiconductor substrate, whose type is opposite to that of the semiconductor substrate, part of the diffusion region on which part the sensing section is provided being different, in dopant concentration, from the other part of the diffusion region so that the electric charges are injected merely to the sensing section in a state where a voltage is applied to the semiconductor substrate. 2. The ion concentration sensor as set forth in claim 1 , wherein the ion sensitive film changes, depending on the ion concentration, a depth of an electric potential of the sensing section. 3. The ion concentration sensor as set forth in claim 1 , further comprising: a protective film which covers the ion concentration sensor, the protective film being provided so that at least part of the ion sensitive film which part is provided on the sensing section is exposed. 4. A method of detecting an ion concentration with use of an ion concentration sensor recited in claim 1 , the electric charge transfer section including: a vertical transfer section which reads out electric charges accumulated in the sensing section and transfers the electric charges in a vertical direction; and a horizontal transfer section which transfers, to the electric charge detecting section, the electric charges that have been transferred from the vertical transfer section, the method comprising the steps of: (a) transferring, to the horizontal transfer section, the electric charges which are accumulated in the vertical transfer section by being read out more than once from the sensing section to the vertical transfer section, the step (a) being carried out by the vertical transfer section; (b) detecting an initial voltage which corresponds to an amount of the electric charges accumulated in an initial state where no ion is in contact with the ion sensitive film, the step (b) being carried out by the electric charge detecting section; (c) detecting a detected voltage which corresponds to the amount of the electric charges accumulated in a detection state where an ion is in contact with the ion sensitive film, the step (c) being carried out by the electric charge detecting section; and (d) calculating a difference between the detected voltage and the initial voltage.

Assignees

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Classifications

  • specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title

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Frequently asked questions

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What does patent US10031101B2 cover?
An ion sensor is configured such that part of a P well on which part a sensing section is provided is different, in dopant concentration, from the other part of the P well so that electric charges are injected merely to the sensing section in a state where a voltage is applied to an N-type substrate.
Who is the assignee on this patent?
Sharp Kk, National Univ Corporation Toyohashi Univ Of Technology, National Univ Corp Toyohashi Univ
What technology area does this patent fall under?
Primary CPC classification G01N27/4145. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 24 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).