Batch type substrate processing apparatus and method of manufacturing semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-12503765-B2
Application number	US-202217826901-A
Country	US
Kind code	B2
Filing date	May 27, 2022
Priority date	Aug 17, 2021
Publication date	Dec 23, 2025
Grant date	Dec 23, 2025

Abstract

A substrate processing apparatus and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a processing chamber; a boat configured to stack substrates; a gas nozzle including a nozzle region and a fastening region; a gas inlet including an insert portion; and an adapter coupling the gas inlet and the gas nozzle. The fastening region includes a first lower region; and a second lower region having a protruding portion protruding outwardly from an outer side surface of the first lower region. The adapter includes a lower pedestal; a lower fastening portion on the lower pedestal and contacting at least a lower surface of the protruding portion; a gasket between a portion of the lower pedestal and a portion of the lower fastening portion; an upper fastening portion contacting at least an upper surface of the protruding portion; a hole passing through the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion; and a fastening unit coupling the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion through the hole.

First claim

What is claimed is:

1 . A substrate processing apparatus comprising:
a processing chamber; a boat configured to stack a plurality of substrates spaced apart from each other in a vertical direction, and to move into the processing chamber by vertical driving; a gas nozzle including a nozzle region disposed in the processing chamber, the nozzle region including gas injection holes disposed in a portion of the gas nozzle facing toward the center of the processing chamber and toward where the boat is configured to be located, and a fastening region disposed below the nozzle region; a gas inlet including an insertion portion inserted into a gas passage in the fastening region; and an adapter coupling the gas inlet and the gas nozzle, wherein the fastening region comprises:
a first lower region; and
a second lower region disposed on the first lower region and having a protruding portion protruding outwardly from an outer side surface of the first lower region,
wherein the adapter comprises:
a lower pedestal;
a lower fastening portion disposed on the lower pedestal and contacting at least a lower surface of the protruding portion;
a gasket disposed between a portion of the lower pedestal and a portion of the lower fastening portion;
an upper fastening portion contacting at least an upper surface of the protruding portion;
a hole passing through the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion; and
a fastening unit coupling the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion through the hole.

2 . The substrate processing apparatus of claim 1 , wherein the lower pedestal comprises a first pedestal and a second pedestal,
wherein the first pedestal comprises a pedestal platform coupled to the gas inlet, and an extension portion extending upwardly from the pedestal platform to define a cavity, the second pedestal is disposed on the extension portion and protrudes outwardly from the first pedestal, the second pedestal comprises a first groove recessed in an upper surface thereof, the lower fastening portion comprises an upper surface contacting a lower surface of the protruding portion, a lower surface opposite to the upper surface of the lower fastening portion, and a second groove recessed in the lower surface of the lower fastening portion, and the gasket fills a space between the first groove and the second groove and contacts the second pedestal and the lower fastening portion.

3 . The substrate processing apparatus of claim 2 , wherein at least a portion of the gasket has a recess shape.

4 . The substrate processing apparatus of claim 1 , wherein the gasket has a ring shape, and the gasket has an inner side surface, an outer side surface, an upper surface, and a lower surface, and
wherein the upper surface of the gasket comprises at least one upper recess, and the lower surface of the gasket comprises at least one lower recess.

5 . The substrate processing apparatus of claim 4 , wherein the at least one upper recess has a “V” shape, and the at least one lower recess is mirror symmetric with the at least one upper recess.

6 . The substrate processing apparatus of claim 4 , wherein the at least one upper recess has a “U” shape, and the at least one lower recess is mirror symmetric with the at least one upper recess.

7 . The substrate processing apparatus of claim 4 , wherein:
a maximum horizontal width of the at least one upper recess is about 0.65 mm to about 1 mm, a horizontal distance from an upper end of the inner side surface to the at least one upper recess is about 0.3 mm to about 0.5 mm, a horizontal distance from an upper end of the outer side surface to the at least one upper recess is about 0.3 mm to about 0.5 mm, and a minimum distance between the at least one upper recess and the at least one lower recess is about 0.5 mm to about 0.8 mm.

8 . The substrate processing apparatus of claim 1 , wherein the upper fastening portion comprises a first upper fastening portion contacting the upper surface of the protruding portion, and a second upper fastening portion extending from the first upper fastening portion and contacting a portion of a side surface of the protruding portion.

9 . The substrate processing apparatus of claim 1 , wherein, at a height level at which the gasket is located, a distance between the gasket and the gas inlet is shorter than a distance between the fastening unit and the gas inlet.

10 . The substrate processing apparatus of claim 1 , wherein the gas nozzle comprises a quartz material, and the adapter comprises at least one corrosion-resistant metal alloy.

11 . The substrate processing apparatus of claim 1 , wherein the gasket comprises a material softer than a material of the lower pedestal and having a higher ductility and smaller hardness than a material of the lower fastening portion.

12 . The substrate processing apparatus of claim 1 , wherein the fastening region of the gas nozzle further comprises an upper region on the second lower region,
wherein the upper region comprises a first upper region and a second upper region on the first upper region, wherein the first upper region has a substantially vertical outer side surface, wherein the second upper region has an inclined outer side surface extending from the outer side surface of the first upper region to gradually decrease in width, and wherein the protruding portion of the second lower region of the gas nozzle protrudes outwardly from the outer side surface of the first upper region.

13 . The substrate processing apparatus of claim 1 , wherein the fastening unit comprises a rod including a portion inserted into the hole.

14 . The substrate processing apparatus of claim 1 , wherein: when viewed in a plan view, the gasket is between the hole and the gas inlet.

Assignees

• Samsung Electronics Co Ltd

Inventors

• IE Sangyub
• Kim Hyungjoon
• Lee Minju
• Choi Eunyeoung

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• C23C16/45578 Primary

  Elongated nozzles, tubes with holes · CPC title

• C23C16/4409

  characterised by sealing means · CPC title

• C23C16/45546

  specially adapted for a substrate stack in the ALD reactor · CPC title

• C23C16/45544 Primary

  characterized by the apparatus · CPC title