Process chamber gas flow improvements

Patent metadata

Field	Value
Publication number	US-9779917-B2
Application number	US-201414480799-A
Country	US
Kind code	B2
Filing date	Sep 9, 2014
Priority date	Feb 12, 2010
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.

First claim

The invention claimed is:

1. A process gas injection nozzle, comprising:
a nozzle body having a plurality of gas passages therethrough;
a plurality of dispersion members arranged to provide a plurality of annular gaps;
a plurality of gasket members having one or more slots formed therein positioned to fluidly couple the gas passages with the annular gaps, wherein at least one of the gasket members is positioned between at least two of the dispersion members; and
a central rod disposed therethrough and coupled to the plurality of gasket members, wherein the central rod is rotatable so that one or more slots are overlapped.

2. A process gas injection nozzle, comprising:
a nozzle body having a plurality of apertures disposed therethrough;
a first dispersion member having a plurality of apertures formed therethrough and aligned with the plurality of apertures disposed through the nozzle body;
a second dispersion member having a plurality of apertures formed therethrough and aligned with the plurality of apertures formed through the first dispersion member;
a first gasket positioned between the nozzle body and the first dispersion member, the first gasket having a plurality of apertures formed therethrough and aligned with the plurality of apertures disposed through the nozzle body;
a second gasket positioned between the first dispersion member and the second dispersion member, the second gasket having a plurality of apertures formed therethrough and aligned with the plurality of apertures disposed through the first dispersion member; and
a central rod disposed through the nozzle body and the first and second dispersion members and the first and second gaskets, wherein the central rod is rotatable so that one or more of the apertures of the first and second dispersion members and/or one or more of the apertures of the first and second gaskets are overlapped.

3. The process gas injection nozzle of claim 2 , further comprising:
a third dispersion member having a plurality of apertures formed therethrough and aligned with the plurality of apertures formed through the second dispersion member; and
a third gasket positioned between the second dispersion member and the third dispersion member, the third gasket having a plurality of apertures formed therethrough and aligned with the plurality of apertures disposed though the second dispersion member, wherein the central rod is disposed through the nozzle body, the first, second, and third dispersion members, and the first, second, and third gaskets, and wherein the central rod is rotatable so that one or more of the apertures of the first, second, and third dispersion members and/or one or more of the apertures of the first, second, and third gaskets are overlapped.

4. The process gas injection nozzle of claim 2 , further comprising:
a backing plate attached to the nozzle body, the backing plate having a plurality of apertures aligned with the plurality of apertures disposed through the nozzle body.

5. The process gas injection nozzle of claim 3 , wherein the first gasket comprises one or more slots formed therethrough and selectively aligned with the one or more of the apertures disposed through the nozzle body.

6. The process gas injection nozzle of claim 5 , wherein the one or more slots of the first gasket are open to an edge of the first gasket.

7. The process gas injection nozzle of claim 6 , wherein the second gasket comprises one or more slots formed therethrough and selectively aligned with the one or more of the apertures disposed through the first dispersion member.

8. The process gas injection nozzle of claim 7 , wherein the one or more slots of the second gasket are open to an edge of the second gasket.

9. The process gas injection nozzle of claim 8 , wherein the third gasket comprises one or more slots formed therethrough and selectively aligned with the one or more of the apertures disposed through the second dispersion member.

10. The process gas injection nozzle of claim 9 , wherein the one or more slots of the third gasket are open to an edge of the third gasket.

11. The process gas injection nozzle of claim 2 , wherein the nozzle body and the first, second, and third dispersion members and the first, second, and third gaskets comprises ceramic materials, metallic materials, or resistive polymeric materials.

12. The process gas injection nozzle of claim 2 , wherein the first dispersion member is engaged with the nozzle body such that a first annular gap is provided between the first dispersion member and the nozzle body.

13. The process gas injection nozzle of claim 2 , wherein the second dispersion member is engaged with the first dispersion member such that a second annular gap is provided between the second dispersion member and the first dispersion member.

14. The process gas injection nozzle of claim 3 , wherein the third dispersion member is engaged with the second dispersion member such that a third annular gap is provided between the third dispersion member and the second dispersion member.

Assignees

• Applied Materials Inc

Inventors

• Detmar Stanley
• West Brian T
• Schauer Ronald Vern

Classifications

• H01J2237/334

  Etching · CPC title

• H01J37/321

  the radio frequency energy being inductively coupled to the plasma · CPC title

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title