Metal oxide semiconductor-based light emitting device

Patent metadata

Field	Value
Publication number	US-12501747-B2
Application number	US-202418957152-A
Country	US
Kind code	B2
Filing date	Nov 22, 2024
Priority date	May 11, 2020
Publication date	Dec 16, 2025
Grant date	Dec 16, 2025

Abstract

A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes: a first epitaxial layer including NiO; and a second epitaxial layer including a second epitaxial oxide material. In some cases, the semiconductor structure can include: a first region including p-type conductivity, wherein the first region includes the superlattice; a second region including an epitaxial oxide material; and a third region including an epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction.

First claim

What is claimed is:

1 . A semiconductor structure comprising a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
a first epitaxial layer comprising NiO; and a second epitaxial layer comprising a second epitaxial oxide material selected from Al 2 O 3 , Ga 2 O 3 , MgO, LiO 2 , SiO 2 , GeO, Er 2 O 3 , Gd 2 O 3 , PdO, Bi 2 O 3 , and IrO 2 .

2 . The semiconductor structure of claim 1 , wherein the second epitaxial oxide material comprises Ga 2 O 3 .

3 . The semiconductor structure of claim 1 , wherein the second epitaxial oxide material comprises MgO.

4 . The semiconductor structure of claim 3 , wherein the unit cells each further comprise a third epitaxial layer comprising a third epitaxial oxide material, wherein the third epitaxial oxide material comprises Ga 2 O 3 .

5 . The semiconductor structure of claim 1 , wherein the unit cell comprises four layers, wherein the four layers comprise, in the following order, the first epitaxial layer comprising NiO, and the second epitaxial layer comprising Ga 2 O 3 , a third epitaxial layer of MgO, and a fourth epitaxial layer of Ga 2 O 3 .

6 . A light emitting device comprising the semiconductor structure of claim 1 .

7 . A semiconductor structure comprising a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
a first epitaxial layer comprising NiO; and a second epitaxial layer comprising a second epitaxial oxide material, wherein the second epitaxial oxide material comprises Zn x Ga 2(1−x) O 3-2x , where 0≤x≤1.

8 . The semiconductor structure of claim 7 , wherein the second epitaxial oxide material comprises ZnGa 2 O 4 .

9 . A semiconductor structure comprising a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
a first epitaxial layer comprising NiO; and a second epitaxial layer comprising a second epitaxial oxide material, wherein the second epitaxial oxide material comprises (Mg x Ni 1−x ) z (Al y Ga 1−y ) 2(1−z) O 3−2z , where 0≤x≤1, 0≤y≤1, and 0≤z≤1.

10 . A light emitting device comprising the semiconductor structure of claim 9 .

11 . A semiconductor structure comprising:
a first region comprising p-type conductivity, wherein the first region comprises a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
a first epitaxial layer comprising NiO; and
a second epitaxial layer comprising a second epitaxial oxide material;
a second region comprising a third epitaxial oxide material; and a third region comprising n-type conductivity and a fourth epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction, wherein the second, third, and fourth epitaxial oxide materials each comprise a material selected from Al 2 O 3 , Ga 2 O 3 MgO, LiO 2 , SiO 2 , GeO, Er 203 , Gd 2 O 3 , PdO, Bi 2 O 3 , and IrO 2 .

12 . The semiconductor structure of claim 11 , wherein the second epitaxial oxide material comprises Ga 2 O 3 .

13 . The semiconductor structure of claim 11 , wherein the second epitaxial oxide material comprises MgO.

14 . The semiconductor structure of claim 13 , wherein the unit cells each further comprise a third epitaxial layer comprising a third epitaxial oxide material, wherein the third epitaxial oxide material comprises Ga 2 O 3 .

15 . The semiconductor structure of claim 11 , wherein the unit cell comprises four layers, wherein the four layers comprise, in the following order, the first epitaxial layer comprising NiO, and the second epitaxial layer comprising Ga 2 O 3 , a third epitaxial layer of MgO, and a fourth epitaxial layer of Ga 2 O 3 .

16 . A light emitting device comprising the semiconductor structure of claim 11 .

17 . A semiconductor structure comprising:
a first region comprising p-type conductivity, wherein the first region comprises a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
a first epitaxial layer comprising NiO; and
a second epitaxial layer comprising a second epitaxial oxide material,
a second region comprising a third epitaxial oxide material; and a third region comprising n-type conductivity and a fourth epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction, wherein the second, third, and fourth epitaxial oxide materials each comprise Zn x Ga 2(1−x) O 3−2x , where 0≤x≤1.

18 . The semiconductor structure of claim 17 , wherein the second epitaxial oxide material comprises ZnGa 2 O 4 .

19 . A semiconductor structure comprising:
a first region comprising p-type conductivity, wherein the first region comprises a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
a first epitaxial layer comprising NiO; and
a second epitaxial layer comprising a second epitaxial oxide material;
a second region comprising a third epitaxial oxide material; and a third region comprising n-type conductivity and a fourth epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction, wherein the second, third, and fourth epitaxial oxide materials each comprise a composition selected from (Mg x Ni 1x ) z (Al y Ga 1y ) 2(1z) O 3−2z , where 0≤x≤1, 0≤y≤1, and 0≤z≤1.

20 . The semiconductor structure of claim 19 , wherein the second and third epitaxial oxide materials have the same composition as each other.

21 . The semiconductor structure of claim 19 , wherein the third and fourth epitaxial oxide materials have different compositions from one another.

22 . A light emitting device comprising the semiconductor structure of claim 19 .

Assignees

• Silanna UV Technologies Pte Ltd

Inventors

• Atanackovic Petar

Classifications

• H10P10/14

  Bonding of semiconductor wafers to insulating substrates · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title