Solid-state imaging device and method of controlling solid-state imaging device

Patent metadata

Field	Value
Publication number	US-12495222-B2
Application number	US-202318357045-A
Country	US
Kind code	B2
Filing date	Jul 21, 2023
Priority date	Aug 31, 2017
Publication date	Dec 9, 2025
Grant date	Dec 9, 2025

Abstract

Provided is a solid-state imaging device that includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

First claim

The invention claimed is:

1 . A method of controlling a light detecting device, the method comprising:
turning on a gate of a reset transistor during a charge non-accumulation period; and turning off the gate of the reset transistor during a charge accumulation period, wherein
the light detecting device comprises a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode,
the light detecting device further comprises an insulating layer between the first electrode and the photoelectric conversion layer,
the first electrode comprises a charge readout electrode and an accumulation electrode, and
the charge readout electrode is electrically coupled with the photoelectric conversion layer via an opening in the insulating layer.

2 . The method of controlling the light detecting device according to claim 1 , further comprising applying different voltages to at least one of the first electrode or the second electrode during the charge accumulation period and the charge non-accumulation period.

3 . The method of controlling the light detecting device according to claim 2 , wherein the charge readout electrode is independent from the accumulation electrode.

4 . The method of controlling the light detecting device according to claim 1 , wherein a voltage across the charge readout electrode and the accumulation electrode is larger during the charge non-accumulation period than during the charge accumulation period.

5 . The method of controlling the light detecting device according to claim 1 , wherein the charge readout electrode serves as a discharge electrode.

6 . The method of controlling the light detecting device according to claim 1 , wherein
the accumulation electrode is divided into a plurality of segments, and each segment of the plurality of segments is configured to receive a different voltage.

7 . The method of controlling the light detecting device according to claim 1 , wherein
the light detecting device further comprises a semiconductor layer between the photoelectric conversion layer and the insulating layer, and the charge readout electrode is electrically coupled with the photoelectric conversion layer via the semiconductor layer.

8 . The method of controlling the light detecting device according to claim 1 , wherein
an organic photoelectric transducer is on an inorganic photoelectric transducer, the organic photoelectric transducer comprises the photoelectric conversion layer, and the inorganic photoelectric transducer is configured to perform photoelectric conversion in a wavelength band different from a wavelength band of the organic photoelectric transducer.

9 . The method of controlling the light detecting device according to claim 8 , wherein
the inorganic photoelectric transducer is within a semiconductor substrate, and the organic photoelectric transducer is on a first surface side of the semiconductor substrate.

10 . The method of controlling the light detecting device according to claim 9 , wherein a multilayer wiring layer is on a second surface side of the semiconductor substrate.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Watanabe Taiichiro
• Yamaguchi Tetsuji
• Sato Yusuke
• Koga Fumihiko

Classifications

• H10K39/32

  Organic image sensors · CPC title

• H10F39/12

  Image sensors · CPC title

• H04N25/17

  Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location · CPC title

• H04N25/778

  comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself · CPC title

• Y02E10/549

  Organic PV cells · CPC title