Semiconductor relay device

US12494781B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12494781-B2
Application numberUS-202418413737-A
CountryUS
Kind codeB2
Filing dateJan 16, 2024
Priority dateMar 23, 2021
Publication dateDec 9, 2025
Grant dateDec 9, 2025

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.

First claim

Opening claim text (preview).

The invention claimed is: 1 . A semiconductor relay device comprising: a conversion circuit configured to receive an input signal from outside, and pass a first current to a first node based on the input signal; an overheat protection circuit provided between the first node and a second node and configured to short the first node to the second node while a temperature in the semiconductor relay device is higher than a predetermined temperature; and a transistor having a gate coupled to the first node, wherein the overheat protection circuit includes: a zener diode having an anode coupled to the second node and a cathode coupled to the first node; a resistor coupled between the second node and a third node; a number n of diodes that are serially coupled, wherein an anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to the third node, where n is a natural number larger than or equal to 2; and a thyristor having an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. 2 . The semiconductor relay device according to claim 1 , further comprising a transmission circuit configured to output the input signal, wherein: the transmission circuit is a light emitting diode, and the conversion circuit includes a photodiode. 3 . The semiconductor relay device according to claim 1 , further comprising a transmission circuit configured to output the input signal, wherein: the input signal is a magnetic signal generated from a coil included in the transmission circuit, and the conversion circuit includes a coil detecting the input signal. 4 . The semiconductor relay device according to claim 1 , further comprising a transmission circuit configured to output the input signal, wherein: the transmission circuit connected to the conversion circuit via a capacitor, and the input signal is an electric signal generated from the transmission circuit and transmitted to the conversion circuit via the capacitor.

Assignees

Inventors

Classifications

  • H03K17/08Primary

    Modifications for protecting switching circuit against overcurrent or overvoltage · CPC title

  • in thyristor switches (H03K17/0812, H03K17/0814 take precedence) · CPC title

  • for DC voltages or currents (H03K17/722, H03K17/735 take precedence) · CPC title

  • Mechanical switches; Electronic switches controlling mechanical switches, e.g. relais · CPC title

  • against excessive temperature · CPC title

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Frequently asked questions

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What does patent US12494781B2 cover?
A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an …
Who is the assignee on this patent?
Toshiba Kk, Toshiba Electronic Devices & Storage Corp
What technology area does this patent fall under?
Primary CPC classification H03K17/08. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 09 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).