Stereo camera device
US-11302020-B2 · Apr 12, 2022 · US
US12494781B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12494781-B2 |
| Application number | US-202418413737-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 16, 2024 |
| Priority date | Mar 23, 2021 |
| Publication date | Dec 9, 2025 |
| Grant date | Dec 9, 2025 |
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Official abstract text for this publication.
A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.
Opening claim text (preview).
The invention claimed is: 1 . A semiconductor relay device comprising: a conversion circuit configured to receive an input signal from outside, and pass a first current to a first node based on the input signal; an overheat protection circuit provided between the first node and a second node and configured to short the first node to the second node while a temperature in the semiconductor relay device is higher than a predetermined temperature; and a transistor having a gate coupled to the first node, wherein the overheat protection circuit includes: a zener diode having an anode coupled to the second node and a cathode coupled to the first node; a resistor coupled between the second node and a third node; a number n of diodes that are serially coupled, wherein an anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to the third node, where n is a natural number larger than or equal to 2; and a thyristor having an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. 2 . The semiconductor relay device according to claim 1 , further comprising a transmission circuit configured to output the input signal, wherein: the transmission circuit is a light emitting diode, and the conversion circuit includes a photodiode. 3 . The semiconductor relay device according to claim 1 , further comprising a transmission circuit configured to output the input signal, wherein: the input signal is a magnetic signal generated from a coil included in the transmission circuit, and the conversion circuit includes a coil detecting the input signal. 4 . The semiconductor relay device according to claim 1 , further comprising a transmission circuit configured to output the input signal, wherein: the transmission circuit connected to the conversion circuit via a capacitor, and the input signal is an electric signal generated from the transmission circuit and transmitted to the conversion circuit via the capacitor.
Modifications for protecting switching circuit against overcurrent or overvoltage · CPC title
in thyristor switches (H03K17/0812, H03K17/0814 take precedence) · CPC title
for DC voltages or currents (H03K17/722, H03K17/735 take precedence) · CPC title
Mechanical switches; Electronic switches controlling mechanical switches, e.g. relais · CPC title
against excessive temperature · CPC title
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