Ingot growing apparatus comprising heater and method for manufacturing heater for ingot growing apparatus

US12492486B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12492486-B2
Application numberUS-202118246700-A
CountryUS
Kind codeB2
Filing dateSep 3, 2021
Priority dateSep 28, 2020
Publication dateDec 9, 2025
Grant dateDec 9, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An ingot growing apparatus is disclosed. An ingot growing apparatus comprising a heater according to an aspect of the present invention may comprise: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucible is installed; a susceptor having an inner surface shaped to correspond to an outer surface of the crucible and surrounding the outer surface of the crucible; and a heater for heating the susceptor, wherein the heater may comprise: a coil which is fixed at a position spaced a predetermined distance apart from an outer surface of the susceptor, is formed to be wound along the outer surface of the susceptor to generate a magnetic field, and heats the susceptor by electromagnetic induction due to the magnetic field; and a shield which is formed to surround an outer surface of the coil to support the coil and blocks the coil from being exposed to the inner space of the growth furnace.

First claim

Opening claim text (preview).

What is claimed is: 1 . An ingot growing apparatus, comprising: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucible is installed; a susceptor having an inner surface shaped to correspond to an outer surface of the crucible and surrounding the outer surface of the crucible; and a heater for heating the susceptor, wherein the heater comprises: a coil which is fixed at a position spaced a predetermined distance apart from an outer surface of the susceptor, is formed to be wound along the outer surface of the susceptor to generate a magnetic field, and heats the susceptor by electromagnetic induction due to the magnetic field; a shield which is formed to surround an outer surface of the coil to support the coil and blocks the coil from being exposed to the inner space of the growth furnace; and a nut disposed inside the shield and coupled to an outer surface of the coil so as to face an outer surface of the shield opposite to the susceptor. 2 . The ingot growing apparatus of claim 1 , wherein the coil is formed to be wound multiple times along the outer surface of the susceptor. 3 . The ingot growing apparatus of claim 2 , wherein a material of the nut is the same as a material of the coll. 4 . The ingot growing apparatus of claim 2 , wherein the shield comprises: a shield body having a shape corresponding to the outer surface of the susceptor; and a nut blocking part disposed inside the shield body to block the nut from being exposed to outside of the shield body. 5 . The ingot growing apparatus of claim 4 , wherein an inner surface of the nut blocking part is formed with threads corresponding to an outer surface shape of a bolt. 6 . The ingot growing apparatus of claim 1 , wherein the shield is made of a non-metallic material. 7 . The ingot growing apparatus of claim 1 , wherein the shield comprises a ceramic material. 8 . The ingot growing apparatus of claim 7 , wherein the ceramic comprises at least one of aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), and zirconium dioxide (ZrO 2 ). 9 . The ingot growing apparatus of claim 1 , wherein the shield is disposed spaced apart from the susceptor.

Assignees

Inventors

Classifications

  • C30B29/06Primary

    Silicon · CPC title

  • Crucibles or containers for supporting the melt · CPC title

  • Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina · CPC title

  • Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint · CPC title

  • Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof · CPC title

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What does patent US12492486B2 cover?
An ingot growing apparatus is disclosed. An ingot growing apparatus comprising a heater according to an aspect of the present invention may comprise: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucible is installed; a susceptor having an inner surface shaped to correspond to an outer surface of the crucible and surrounding the outer surface …
Who is the assignee on this patent?
Hanwha Solutions Corp, Hanwha Corp
What technology area does this patent fall under?
Primary CPC classification C30B29/06. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 09 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).