Use of quartz plates during growth of single crystal silicon ingots
US-12146236-B2 · Nov 19, 2024 · US
US12492486B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12492486-B2 |
| Application number | US-202118246700-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 3, 2021 |
| Priority date | Sep 28, 2020 |
| Publication date | Dec 9, 2025 |
| Grant date | Dec 9, 2025 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An ingot growing apparatus is disclosed. An ingot growing apparatus comprising a heater according to an aspect of the present invention may comprise: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucible is installed; a susceptor having an inner surface shaped to correspond to an outer surface of the crucible and surrounding the outer surface of the crucible; and a heater for heating the susceptor, wherein the heater may comprise: a coil which is fixed at a position spaced a predetermined distance apart from an outer surface of the susceptor, is formed to be wound along the outer surface of the susceptor to generate a magnetic field, and heats the susceptor by electromagnetic induction due to the magnetic field; and a shield which is formed to surround an outer surface of the coil to support the coil and blocks the coil from being exposed to the inner space of the growth furnace.
Opening claim text (preview).
What is claimed is: 1 . An ingot growing apparatus, comprising: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucible is installed; a susceptor having an inner surface shaped to correspond to an outer surface of the crucible and surrounding the outer surface of the crucible; and a heater for heating the susceptor, wherein the heater comprises: a coil which is fixed at a position spaced a predetermined distance apart from an outer surface of the susceptor, is formed to be wound along the outer surface of the susceptor to generate a magnetic field, and heats the susceptor by electromagnetic induction due to the magnetic field; a shield which is formed to surround an outer surface of the coil to support the coil and blocks the coil from being exposed to the inner space of the growth furnace; and a nut disposed inside the shield and coupled to an outer surface of the coil so as to face an outer surface of the shield opposite to the susceptor. 2 . The ingot growing apparatus of claim 1 , wherein the coil is formed to be wound multiple times along the outer surface of the susceptor. 3 . The ingot growing apparatus of claim 2 , wherein a material of the nut is the same as a material of the coll. 4 . The ingot growing apparatus of claim 2 , wherein the shield comprises: a shield body having a shape corresponding to the outer surface of the susceptor; and a nut blocking part disposed inside the shield body to block the nut from being exposed to outside of the shield body. 5 . The ingot growing apparatus of claim 4 , wherein an inner surface of the nut blocking part is formed with threads corresponding to an outer surface shape of a bolt. 6 . The ingot growing apparatus of claim 1 , wherein the shield is made of a non-metallic material. 7 . The ingot growing apparatus of claim 1 , wherein the shield comprises a ceramic material. 8 . The ingot growing apparatus of claim 7 , wherein the ceramic comprises at least one of aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), and zirconium dioxide (ZrO 2 ). 9 . The ingot growing apparatus of claim 1 , wherein the shield is disposed spaced apart from the susceptor.
Silicon · CPC title
Crucibles or containers for supporting the melt · CPC title
Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina · CPC title
Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint · CPC title
Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.