Automated mapping method of crystalline structure and orientation of polycrystalline material with deep learning

US12487196B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12487196-B2
Application numberUS-202217959793-A
CountryUS
Kind codeB2
Filing dateOct 4, 2022
Priority dateOct 15, 2021
Publication dateDec 2, 2025
Grant dateDec 2, 2025

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Abstract

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A method for two-dimensional mapping of crystal information of a polycrystalline material may include acquiring a diffraction pattern acquired by scanning an electron beam to a polycrystalline material, generating a plurality of clusters by applying a clustering algorithm to the acquired diffraction pattern based on unsupervised learning, acquiring crystal information of the polycrystalline material by applying a parallel deep convolutional neural network (DCNN) algorithm to each of the plurality of generated clusters based on supervised learning, and generating a two-dimensional image in which the acquired crystal information is mapped.

First claim

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What is claimed is: 1 . A method for two-dimensional mapping of crystal information of a polycrystalline material, the method comprising: acquiring a diffraction pattern by scanning an electron beam to the polycrystalline material; generating a plurality of clusters by clustering the acquired diffraction pattern based on unsupervised learning; acquiring the crystal information of the polycrystalline material by distributing and processing the crystal information in a parallel deep convolutional neural network (DCNN) for each of the plurality of generated clusters based on supervised learning, wherein the crystal information includes a crystal symmetry, a crystal tilt and a crystal thickness, each acquired using the parallel DCNN; and generating a two-dimensional image in which the acquired crystal information is mapped. 2 . The method of claim 1 , wherein the generating of the plurality of clusters comprises: classifying the acquired diffraction pattern based on crystal grains contained in the polycrystalline material; and generating a positional averaged diffraction pattern for the classified diffraction pattern. 3 . The method of claim 2 , wherein the number of the plurality of generated clusters is the same as the number of the crystal grains included in the polycrystalline material. 4 . The method of claim 2 , wherein the generating of the plurality of clusters further comprising: performing rotation correction on a direction of the generated positional average diffraction pattern to correspond to a direction of a simulated positional averaged diffraction pattern. 5 . The method of claim 1 , wherein the generating of the plurality of clusters comprises applying at least one of a K-means algorithm, a mean shift algorithm, a Gaussian mixture model (GMM) algorithm, or a density based spatial clustering of applications with noise (DBSCAN) algorithm with respect to the acquired diffraction pattern. 6 . The method of claim 1 , wherein the parallel DCNN applied to each of the plurality of clusters comprises a first DCNN algorithm associated with the crystal symmetry of the polycrystalline material, a second DCNN algorithm associated with the crystal tilt, and a third DCNN algorithm associated with the crystal thickness. 7 . The method of claim 6 , wherein the parallel DCNN applied to each of the plurality of generated clusters further comprises a fourth DCNN algorithm associated with strain of a crystal structure. 8 . The method of claim 1 , wherein the two-dimensional image comprises a first map image associated with the crystal symmetry, a second map image associated with the crystal tilt, and a third map image associated with the crystal thickness. 9 . The method of claim 1 , wherein the polycrystalline material has an ultra-thin film thickness of about 10 nm or less. 10 . The method of claim 1 , wherein the acquired diffraction pattern comprises convergent beam electron diffraction (CBED) data acquired through 4D-scanning transmission electron microscope (4D-STEM). 11 . An apparatus for two-dimensional mapping of crystal information of a polycrystalline material, the apparatus comprising: an image acquisition unit configured to detect a captured image of a sample having the polycrystalline material by scanning an electron beam on the polycrystalline material; and an image processing unit configured to acquire a diffraction pattern acquired by the scanning of the electron beam on the polycrystalline material, generate a plurality of clusters by clustering the diffraction pattern acquired based on unsupervised learning, acquire the crystal information of the polycrystalline material by distributing and processing the crystal information in a parallel deep convolutional neural network (DCNN) for each of the plurality of generated clusters based on supervised learning, wherein the crystal information includes a crystal symmetry, a crystal tilt and a crystal thickness, each acquired using the parallel DCNN, and generate a two-dimensional image in which the acquired crystal information is mapped. 12 . The apparatus of claim 11 , wherein the image processing unit is configured to classify the acquired diffraction pattern based on crystal grains included in the polycrystalline material and to generate a positional average diffraction pattern with respect to the classified diffraction pattern. 13 . The apparatus of claim 12 , wherein the number of the plurality of generated clusters is the same as the number of the crystal grains included in the polycrystalline material. 14 . The apparatus of claim 12 , wherein the image processing unit is configured to perform rotation correction on a direction of the generated positional average diffraction pattern to correspond to a direction of a simulated positional averaged diffraction pattern. 15 . The apparatus of claim 11 , wherein the image processing unit is configured to generate the plurality of clusters by applying at least one of a K-means algorithm, a mean shift algorithm, a Gaussian mixture model (GMM) algorithm, or a density based spatial clustering of applications with noise (DBSCAN) algorithm with respect to the acquired diffraction pattern. 16 . The apparatus of claim 11 , wherein the parallel DCNN applied to each of the plurality of clusters comprises a first DCNN algorithm associated with the crystal symmetry of the polycrystalline material, a second DCNN algorithm associated with the crystal tilt, and a third DCNN algorithm associated with the crystal thickness. 17 . The apparatus of claim 16 , wherein the parallel DCNN applied to each of the plurality of generated clusters further comprises a fourth DCNN algorithm associated with strain of a crystal structure. 18 . The apparatus of claim 11 , wherein the two-dimensional image comprises a first map image associated with the crystal symmetry, a second map image associated with the crystal tilt, and a third map image associated with the crystal thickness. 19 . The apparatus of claim 11 , wherein the apparatus is configured to generate the two-dimensional image for the polycrystalline material which has an ultra-thin film thickness of about 10 nm or less. 20 . The apparatus of claim 11 , wherein the image acquisition unit includes a 4D-scanning transmission electron microscope (4D-STEM), and the acquired diffraction pattern comprises convergent beam electron diffraction (CBED) data acquired through the 4D-STEM.

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Classifications

  • Non-hierarchical techniques, e.g. based on statistics of modelling distributions · CPC title

  • from scanning electron microscope · CPC title

  • using classification, e.g. of video objects · CPC title

  • Artificial neural networks [ANN] · CPC title

  • using neural networks · CPC title

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What does patent US12487196B2 cover?
A method for two-dimensional mapping of crystal information of a polycrystalline material may include acquiring a diffraction pattern acquired by scanning an electron beam to a polycrystalline material, generating a plurality of clusters by applying a clustering algorithm to the acquired diffraction pattern based on unsupervised learning, acquiring crystal information of the polycrystalline mat…
Who is the assignee on this patent?
Samsung Electronics Co Ltd, Research & Business Found Sungkyunkwan Univ
What technology area does this patent fall under?
Primary CPC classification G01N23/20058. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 02 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).