Miniature field plate T-gate and method of fabricating the same
US-11302786-B2 · Apr 12, 2022 · US
Semiconductor device
US12484279B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12484279-B2 |
| Application number | US-202418664195-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 14, 2024 |
| Priority date | Jun 30, 2020 |
| Publication date | Nov 25, 2025 |
| Grant date | Nov 25, 2025 |
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- Title
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Abstract
Official abstract text for this publication.
Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap greater than a band gap of the first nitride semiconductor layer; a group III-V dielectric layer disposed on the second nitride semiconductor layer; a gate electrode disposed on the second nitride semiconductor layer; and a first passivation layer disposed on the group III-V dielectric layer, wherein the group III-V dielectric layer is separated from the gate electrode by the first passivation layer.
First claim
Opening claim text (preview).
What is claimed is: 1 . A semiconductor device, comprising: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap greater than a band gap of the first nitride semiconductor layer; a gate electrode having a first portion with a first length and in direct contact with the second nitride semiconductor layer, and a second portion with a second length different from the first length and on the first portion; and a passivation layer disposed on the second nitride semiconductor layer, wherein the first length and the second length are measured in a channel length direction, and wherein the passivation layer has a sidewall in direct contact with the second nitride semiconductor layer, the first portion of the gate electrode and the second portion of the gate electrode. 2 . The semiconductor device according to claim 1 , wherein the second length is greater than the first length. 3 . The semiconductor device according to claim 1 , further comprising: a group III-V dielectric layer in direct contact with the second nitride semiconductor layer. 4 . The semiconductor device according to claim 3 , wherein the passivation layer separates the gate electrode from the group III-V dielectric layer. 5 . The semiconductor device according to claim 3 , wherein the group III-V dielectric layer includes aluminum nitride (AlN).
Assignees
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Classifications
the encapsulations being multilayered · CPC title
the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title
comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title
for FETs · CPC title
Nitride Group III-V materials, e.g. AlN or GaN · CPC title
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Frequently asked questions
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- What does patent US12484279B2 cover?
- Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap greater than a band gap of the first nitride semiconductor layer; a group III-V dielectric layer disposed on the second nitride…
- Who is the assignee on this patent?
- Innoscience Zhuhai Technology Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D30/475. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 25 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).