Plasma processing apparatus and plasma processing method
US-2025149296-A1 · May 8, 2025 · US
US12482634B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12482634-B2 |
| Application number | US-202218689030-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 14, 2022 |
| Priority date | Sep 17, 2021 |
| Publication date | Nov 25, 2025 |
| Grant date | Nov 25, 2025 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A coil is disposed next to a plasma processing chamber. A first direct-drive radiofrequency (RF) power supply has an output through which a first shaped-amplified square waveform signal is transmitted. A first reactive circuit is connected between the output of the first direct-drive RF power supply and a first end of the coil. The first reactive circuit transforms the first shaped-amplified square waveform signal into a first shaped-sinusoidal signal in route to the first end of the coil. A second direct-drive RF power supply has an output through which a second shaped-amplified square waveform signal is transmitted. A second reactive circuit is connected between the output of the second direct-drive RF power supply and a second end of the coil. The second reactive circuit transforms the second shaped-amplified square waveform signal into a second shaped-sinusoidal signal in route to the second end of the coil.
Opening claim text (preview).
What is claimed is: 1 . A plasma processing system, comprising: a plasma processing chamber; a coil disposed next to the plasma processing chamber, the coil having a first end and a second end; a first direct-drive radiofrequency power supply having an output through which a first shaped-amplified square waveform signal is transmitted; a first reactive circuit connected between the output of the first direct-drive radiofrequency power supply and the first end of the coil, the first reactive circuit configured to transform the first shaped-amplified square waveform signal into a first shaped-sinusoidal signal in route to the first end of the coil; a second direct-drive radiofrequency power supply having an output through which a second shaped-amplified square waveform signal is transmitted; and a second reactive circuit connected between the output of the second direct-drive radiofrequency power supply and the second end of the coil, the second reactive circuit configured to transform the second shaped-amplified square waveform signal into a second shaped-sinusoidal signal in route to the second end of the coil. 2 . The plasma processing system as recited in claim 1 , wherein the first direct-drive radiofrequency power supply and the second direct-drive radiofrequency power supply have matching configurations, and wherein the first reactive circuit and the second reactive circuit have matching configurations. 3 . The plasma processing system as recited in claim 2 , wherein the first direct-drive radiofrequency power supply includes an electrical signal generator connected to transmit a first electrical signal through a first gate driver to a first end of a primary winding of a pulse transformer, the electrical signal generator also connected to transmit a second electrical signal through a second gate driver to a second end of the primary winding of the pulse transformer, the first direct-drive radiofrequency power supply including a half-bridge transistor circuit that includes a first transistor and a second transistor connected in series between a voltage supply and a reference ground potential, the first transistor having a gate connected to a first secondary winding of the pulse transformer, the second transistor having a gate connected to a second secondary winding of the pulse transformer, the output of the first direct-drive radiofrequency power supply provided at a connection between the first transistor and the second transistor. 4 . The plasma processing system as recited in claim 2 , wherein the first reactive circuit includes a variable capacitor. 5 . A method for operating a plasma processing system, comprising: operating a first direct-drive radiofrequency signal generator to generate a first shaped-amplified square waveform signal; transmitting the first shaped-amplified square waveform signal to a first reactive circuit; operating the first reactive circuit to transform the first shaped-amplified square waveform signal into a first shaped-sinusoidal signal; transmitting the first shaped-sinusoidal signal to a first end of a coil of a plasma processing chamber, the first shaped-sinusoidal signal conveying radiofrequency power to the coil; operating a second direct-drive radiofrequency signal generator to generate a second shaped-amplified square waveform signal; transmitting the second shaped-amplified square waveform signal to a second reactive circuit; operating the second reactive circuit to transform the second shaped-amplified square waveform signal into a second shaped-sinusoidal signal; and transmitting the second shaped-sinusoidal signal to a second end of the coil of the plasma processing chamber, the second shaped-sinusoidal signal conveying radiofrequency power to the coil. 6 . The method as recited in claim 5 , wherein the first shaped-sinusoidal signal conveys about one-half of a total amount of radiofrequency power to the coil, and the second shaped-sinusoidal signal conveys about one-half of the total amount of radiofrequency power to the coil. 7 . The method as recited in claim 5 , wherein the first direct-drive radiofrequency signal generator and the second direct-drive radiofrequency signal generator have matching configurations, and wherein the first reactive circuit and the second reactive circuit have matching configurations. 8 . The method as recited in claim 5 , wherein the first direct-drive radiofrequency signal generator and the second direct-drive radiofrequency signal generator are operated at a same direct current rail voltage. 9 . The method as recited in claim 8 , wherein the same direct current rail voltage is less than a voltage across the coil. 10 . The method as recited in claim 5 , further comprising: adjusting a capacitance setting within the first reactive circuit so that a peak amount of radiofrequency power is transmitted from the first direct-drive radiofrequency power supply through the first reactive circuit to the first end of the coil; and adjusting a capacitance setting within the second reactive circuit so that a peak amount of radiofrequency power is transmitted from the second direct-drive radiofrequency power supply through the second reactive circuit to the second end of the coil. 11 . A plasma processing system, comprising: a plasma processing chamber; a coil disposed next to the plasma processing chamber, the coil having a first end and a second end; a direct-drive radiofrequency power supply having an output through which a shaped-amplified square waveform signal is transmitted; a reactive circuit connected between the output of the direct-drive radiofrequency power supply and the first end of the coil, the reactive circuit configured to transform the shaped-amplified square waveform signal into a shaped-sinusoidal signal in route to the first end of the coil; and a variable capacitor having an input terminal connected to the second end of the coil, the variable capacitor having an output terminal connected to a reference ground potential. 12 . The plasma processing system as recited in claim 11 , wherein the second end of the coil is connected to one electrical component capable of affecting radiofrequency power transmission from the coil to a plasma within the plasma processing chamber, the one electrical component being the variable capacitor. 13 . The plasma processing system as recited in claim 11 , wherein the direct-drive radiofrequency power supply includes an electrical signal generator connected to transmit a first electrical signal through a first gate driver to a first end of a primary winding of a pulse transformer, the electrical signal generator also connected to transmit a second electrical signal through a second gate driver to a second end of the primary winding of the pulse transformer, the direct-drive radiofrequency power supply including a half-bridge transistor circuit that includes a first transistor and a second transistor connected in series between a voltage supply and another reference ground potential, the first transistor having a gate connected to a first secondary winding of the pulse transformer, the second transistor having a gate connected to a second secondary winding of the pulse transformer, the output of the direct-drive radiofrequency power supply provided at a connection between the first transistor and the second transistor. 14 . A method for operating a plasma processing system, comprising: operating a direct-drive radiofrequency signal generator to generate a shaped-amplified square waveform signal; transmitting the shaped-amplified square waveform signal to a reactive circuit; oper
Matching circuits · CPC title
Amplitude modulation, includes pulsing · CPC title
using particular waveforms, e.g. polarised waves · CPC title
Plural frequencies · CPC title
Circuits specially adapted for controlling the RF discharge · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.