Method for producing semiconductor nanoparticles and light-emitting device
US-2022285589-A1 · Sep 8, 2022 · US
Method of producing semiconductor nanoparticles
US12480044B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12480044-B2 |
| Application number | US-202117905900-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 8, 2021 |
| Priority date | Mar 9, 2020 |
| Publication date | Nov 25, 2025 |
| Grant date | Nov 25, 2025 |
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Abstract
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Provided is a method of producing semiconductor nanoparticles exhibiting band-edge emission with a short emission peak wavelength. The method of producing semiconductor nanoparticles comprises: obtaining a first mixture that contains a Ag salt, an In salt, a compound containing Ga and S, and an organic solvent; and performing a heat treatment of the first mixture at a temperature in a range of 125° C. or higher and 300° C. or lower to obtain first semiconductor nanoparticles.
First claim
Opening claim text (preview).
The invention claimed is: 1 . A method of producing semiconductor nanoparticles, the method comprising: obtaining a first mixture containing a Ag salt, an In salt, a compound containing Ga and S, and an organic solvent; and performing a heat treatment of the first mixture at a temperature in a range of 125° C. or higher and 300° C. or lower to obtain first semiconductor nanoparticles. 2 . The method of producing semiconductor nanoparticles according to claim 1 , wherein the temperature of the heat treatment is 125° C. or higher and 175° C. or lower. 3 . The method of producing semiconductor nanoparticles according to claim 1 , wherein, in the first mixture, a ratio of a number of Ga atoms is 0.1 or more and 0.95 or less with respect to a total number of In and Ga atoms contained in the first mixture. 4 . The method of producing semiconductor nanoparticles according to claim 1 , wherein the organic solvent comprises an unsaturated fatty acid. 5 . The method of producing semiconductor nanoparticles according to claim 1 , wherein the compound containing Ga and S comprises a Ga salt of a sulfur-containing compound. 6 . The method of producing semiconductor nanoparticles according to claim 1 , wherein the first mixture further comprises an alkali metal salt. 7 . The method of producing semiconductor nanoparticles according to claim 1 , wherein the Ag salt comprises a compound containing Ag and S. 8 . A method of producing semiconductor nanoparticles, the method comprising: providing a second mixture that comprises the first semiconductor nanoparticles obtained by the method according to claim 1 , a compound containing a Group 13 element, and a simple substance composed of a Group 16 element or a compound containing a Group 16 element; and performing a heat treatment of the second mixture to obtain second semiconductor nanoparticles. 9 . The method of producing semiconductor nanoparticles according to claim 8 , wherein the second mixture further comprises an alkali metal salt.
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Classifications
Chalcogenides · CPC title
Chalcogenides · CPC title
Compounds containing silver, with or without oxygen or hydrogen, and containing two or more other elements · CPC title
Methods for preparing sulfides or polysulfides, in general (ammonium sulfides or polysulfides C01C; sulfides or polysulfides of metals, other than alkali metals, magnesium, calcium, strontium and barium, see the relevant groups of subclasses C01F or C01G, according to the metal) · CPC title
Manufacture or treatment of nanostructures · CPC title
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- What does patent US12480044B2 cover?
- Provided is a method of producing semiconductor nanoparticles exhibiting band-edge emission with a short emission peak wavelength. The method of producing semiconductor nanoparticles comprises: obtaining a first mixture that contains a Ag salt, an In salt, a compound containing Ga and S, and an organic solvent; and performing a heat treatment of the first mixture at a temperature in a range of …
- Who is the assignee on this patent?
- National Univ Corporation Tokai National Higher Education And Research System, Univ Osaka, Nichia Corp
- What technology area does this patent fall under?
- Primary CPC classification C09K11/621. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 25 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).