Quaternary Alkylammonium Hypochlorite Solution, Method for Manufacturing Same, and Method for Cleaning Semiconductor Wafer
US-2021309942-A1 · Oct 7, 2021 · US
US12466732B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12466732-B2 |
| Application number | US-202117618762-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 16, 2021 |
| Priority date | Apr 17, 2020 |
| Publication date | Nov 11, 2025 |
| Grant date | Nov 11, 2025 |
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A method for producing halogen oxyacid, which includes a step of continuously supplying and mixing an organic alkali solution and a halogen and continuously collecting a reaction solution containing halogen oxyacid, and an production apparatus of halogen oxyacid, which includes a reactor, a means of supplying an organic alkali solution to the reactor, a means of supplying a halogen to the reactor, and a means of collecting a reaction solution for taking out the reaction solution from the reactor, in which the organic alkali solution and the halogen are continuously supplied by the means of supplying an organic alkali solution and the means of supplying a halogen, respectively, to the reactor so as to be mixed therein such that a solution containing halogen oxyacid is generated as a reaction solution, and the reaction solution is continuously collected by the means of collecting a reaction solution are provided.
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The invention claimed is: 1 . A method for producing halogen oxyacid, which comprises a step of continuously supplying and mixing an organic alkali solution and a halogen into a reactor, and continuously collecting a reaction solution containing the halogen oxyacid generated, wherein a residence time of the reaction solution is from 0.1 to 120 minutes, the reaction solution is continuously collected after a pHI of the reaction solution in the reactor becomes constant, the pH of the reaction solution in the reactor is from 10.5 to 14.5, and an amount of the reaction solution in the reactor is kept constant. 2 . The producing method according to claim 1 , wherein an amount of the reaction solution which is continuously collected corresponds to an amount of the organic alkali solution and the halogen which are continuously supplied. 3 . The producing method according to claim 1 , which comprises a filtration step of filtering the reaction solution containing the halogen oxyacid. 4 . The producing method according to claim 1 , which comprises a storage step of storing the reaction solution containing halogen oxyacid. 5 . The producing method according to claim 4 , wherein a pHI at 25° C. during storage in the storage step is from 12.0 or more and less than 14.0. 6 . The producing method according to claim 1 , wherein a pH of the organic alkali solution at 25° C. is 10.5 or more and 14.5 or less. 7 . The producing method according to claim 1 , wherein the organic alkali is onium hydroxide, and the halogen oxyacid is onium halogen oxyacid. 8 . The producing method according to claim 7 , wherein the onium hydroxide is quaternary ammonium hydroxide, and the onium halogen oxyacid is quaternary ammonium hypohalite. 9 . The producing method according to claim 8 , wherein the quaternary ammonium hydroxide is tetramethylammonium hydroxide, and the quaternary ammonium hypohalite is tetramethylammonium hypohalite. 10 . The producing method according to claim 1 , wherein the halogen is chlorine, bromine, hypochlorous acid, hypobromous acid, chlorous acid, bromous acid, chloric acid, or bromic acid.
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title
from amines, by reactions not involving amino groups, e.g. reduction of unsaturated amines, aromatisation, or substitution of the carbon skeleton · CPC title
Hypochlorous acid · CPC title
Purification · CPC title
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