Display device and method for manufacturing display device
US-2023307595-A1 · Sep 28, 2023 · US
US12464870B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12464870-B2 |
| Application number | US-202217821881-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 24, 2022 |
| Priority date | Aug 24, 2022 |
| Publication date | Nov 4, 2025 |
| Grant date | Nov 4, 2025 |
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Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly sealing structures for LED packages are disclosed. Sealing structures include multiple seals within an LED package that provide a multiple barrier structure for enhanced protection from elemental ingress from a surrounding environment. Certain seals may be provided as bonding materials between cover structures and submounts of LED packages, thereby enclosing LED chips. Additional seals may be provided as coatings on surfaces of LED chips and/or submounts that are between cover structures and LED chips. Sealing structures may include multiple levels of hermetic seals with LED packages.
Opening claim text (preview).
What is claimed is: 1 . A light-emitting diode (LED) package comprising: a submount comprising a first side and a second side that opposes the first side; at least one LED chip on the first side of the submount; a cover structure arranged over the at least one LED chip, the cover structure being attached to the submount to form a first seal between the cover structure and the submount, the first seal being a first hermetic seal; and a second seal on the LED chip and on a surface of the submount that is adjacent the LED chip, the second seal comprising inorganic materials, the first seal being attached to a first portion of the submount that is outside an area of the second seal on the surface of the submount. 2 . The LED package of claim 1 , wherein the second seal is a second hermetic seal. 3 . The LED package of claim 1 , further comprising a metal trace on the first side of the submount, the metal trace forming at least one reflective surface for the at least one LED chip, wherein the second seal is on a surface of the metal trace. 4 . The LED package of claim 1 , wherein the cover structure forms a cavity on the submount, the second seal and the at least one LED chip are positioned within the cavity, and the second seal covers all surfaces of the at least one LED chip and the submount that are within the cavity such that the cavity is bounded by the cover structure and the second seal. 5 . The LED package of claim 1 , wherein the cover structure forms a cavity on the submount, and the second seal covers all surfaces of the at least one LED chip and a second portion of the submount within the cavity such that a gap is formed on the submount between the second seal and the first seal. 6 . The LED package of claim 1 , wherein a portion of the second seal is in contact with the first seal. 7 . The LED package of claim 1 , wherein the second seal comprises a thickness that is less than a thickness of the at least one LED chip as measured in a direction perpendicular to the submount. 8 . The LED package of claim 1 , wherein a thickness of the second seal is in a range from 1 nanometer (nm) to 20 microns (μm) as measured in a direction perpendicular to the submount. 9 . The LED package of claim 1 , wherein the cover structure forms a cavity on the submount, and the second seal comprises an index of refraction that is intermediate an index of refraction for the at least one LED chip and an index of refraction for an environment of the cavity. 10 . The LED package of claim 1 , wherein the cover structure forms a curved lens or a flat lens above the at least one LED chip. 11 . The LED package of claim 1 , wherein the first seal comprises a metal-to-metal eutectic bond, a solder bond, a glass bond, or a ceramic bond. 12 . The LED package of claim 1 , further comprising a spacer on the submount, wherein the first seal is formed between the spacer and the cover structure. 13 . The LED package of claim 1 , further comprising a lumiphoric material, wherein the second seal is arranged between the lumiphoric material and the at least one LED chip. 14 . The LED package of claim 1 , further comprising a lumiphoric material, wherein the lumiphoric material is arranged between the second seal and the at least one LED chip. 15 . The LED package of claim 1 , further comprising a third seal on the second seal, wherein at least one of the second seal and the third seal is a second hermetic seal. 16 . The LED package of claim 1 , wherein the at least one LED chip is configured to provide a peak wavelength in a range from 100 nanometers (nm) to 400 nm. 17 . A light-emitting diode (LED) package comprising: a submount comprising a first side and a second side that opposes the first side; at least one LED chip on the first side of the submount; a cover structure arranged over the at least one LED chip, the cover structure being attached to the submount to form a first seal between the cover structure and the submount; and a second seal on the LED chip and on a surface of the submount that is adjacent the at least one LED chip, the second seal being a hermetic seal that is between the cover structure and the at least one LED chip, the first seal being attached to a first portion of the submount that is outside an area of the second seal on the surface of the submount. 18 . The LED package of claim 17 , wherein the cover structure forms a cavity on the submount, and the hermetic seal and the at least one LED chip are positioned within the cavity. 19 . The LED package of claim 17 , wherein the first seal comprises an organic material and the second seal comprises an inorganic material. 20 . The LED package of claim 17 , wherein the first seal comprises another hermetic seal. 21 . The LED package of claim 17 , further comprising a metal trace on the first side of the submount, the metal trace forming at least one reflective surface for the at least one LED chip, wherein the second seal is on a surface of the metal trace. 22 . The LED package of claim 17 , wherein the at least one LED chip is configured to provide a peak wavelength in a range from 100 nanometers (nm) to 400 nm.
containing nitrogen, e.g. GaN · CPC title
Optical field-shaping means, e.g. lenses · CPC title
characterised by their shape · CPC title
Coatings, e.g. passivation layers or antireflective coatings · CPC title
Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title
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