Method for depositing nanostructures on substrate and nanostructure arrays

Patent metadata

Field	Value
Publication number	US-12464788-B2
Application number	US-202117916052-A
Country	US
Kind code	B2
Filing date	Mar 30, 2021
Priority date	Mar 31, 2020
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

A method for depositing nanostructures on a substrate comprises: forming a patterned alignment layer on a surface of the substrate, wherein the patterned alignment layer has one or more cavities each having a main region for accommodating at least one template nanostructure therein and a plurality of extension regions extending from the main region and in fluid communication with the main region, and wherein the plurality of extension regions are sized and shaped to not accommodate the at least one template nanostructure; and diffusing template nanostructures into the one or more cavities of the patterned alignment layer.

First claim

What is claimed is:

1 . A method for depositing nanostructures on a substrate, comprising:
forming a patterned alignment layer on a surface of the substrate, wherein the patterned alignment layer has one or more cavities each having a main region for accommodating at least one template nanostructure therein and a plurality of extension regions extending from the main region and in fluid communication with the main region, and wherein the plurality of extension regions are sized and shaped to not accommodate the at least one template nanostructure; and diffusing template nanostructures into the one or more cavities of the patterned alignment layer.

2 . The method of claim 1 , further comprising:
removing the patterned alignment layer from the substrate.

3 . The method of claim 2 , wherein removing the patterned alignment layer from the substrate comprises:
removing the patterned alignment layer from the substrate using a liftoff process.

4 . The method of claim 1 , wherein the main region of each of the one or more cavities is further configured to orientate the at least one template nanostructure accommodated therein.

5 . The method of claim 1 , wherein each of the one or more cavities is further configured that, when the at least one template nanostructure is accommodated in the cavity, at least one translational degree of freedom of the at least one template nanostructure along the surface of the substrate is limited.

6 . The method of claim 1 , wherein forming a patterned alignment layer on a surface of the substrate comprises:
forming an alignment layer on the surface of the substrate; and patterning the alignment layer.

7 . The method of claim 6 , wherein patterning the alignment layer comprises:
patterning the alignment layer using a lithography process.

8 . The method of claim 7 , wherein the lithography process comprises: electro-beam lithography, photolithography, imprint lithography or directed self-assembly of block copolymers.

9 . The method of claim 7 , wherein forming an alignment layer on the surface of the substrate comprises:
spin-coating the surface of the substrate with a photoresist to form the alignment layer.

10 . The method of claim 9 , wherein the photoresist comprises poly (methyl methacrylate) (PMMA) or polydimethylsiloxane (PDMS).

11 . The method of claim 1 , wherein diffusing template nanostructures into the one or more cavities of the patterned alignment layer comprises:
dipping a solution containing the template nanostructures onto the patterned alignment layer; and incubating the substrate to diffuse the template nanostructures into the cavities.

12 . The method of claim 11 , wherein incubating the substrate comprises:
dehydrating or evaporating the substrate in a sealed chamber for a predetermined time period.

13 . The method of claim 1 , wherein before diffusing template nanostructures into the one or more cavities of the patterned alignment layer, the method further comprises:
differentiating the substrate to improve adhesivity of the surface of the substrate to the template nanostructures.

14 . The method of claim 2 , wherein the template nanostructures are decorated with functional nanostructures, and wherein, after removing the patterned alignment layer from the substrate, the method further comprises:
removing template portion of the template nanostructures from the substrate to leave the functional nanostructures on the substrate.

15 . The method of claim 14 , wherein before removing template portion of the template nanostructures from the substrate, the method further comprises:
forming fixation structures on the substrate to fix the functional nanostructures on the substrate.

16 . The method of claim 1 , wherein one of the one or more cavities has a plurality of extension regions which increase a volume of the cavity by at least 5%, or preferably by 10%, 20%, 30%, 50%, 100%, 150%, 200% or higher.

17 . The method of claim 1 , wherein each of the one or more cavities has a depth of 2 or more folds, preferably 5 or more folds, than a thickness of the template nanostructures.

18 . The method of claim 1 , wherein the template nanostructures comprise one or more substances selected from the group consisting of nucleic acid templates, decorated nucleic acid templates, protein templates, peptide nucleic acid templates, polymer templates, carbon nanotubes (CNTs), polymer-wrapped CNTs, CNT films, semiconductor nanoparticles, semiconductor nanowires, semiconductor nano-bricks, metal nanoparticles, metal nanowires, metal nano-bricks, polymeric nanoparticles, polymeric nanowires, polymeric nano-bricks, ceramic nanoparticles, ceramic nanowires, ceramic nano-bricks, metal oxide nanoparticles, metal oxide nanowires, metal oxide nano-bricks, fluoride nanoparticles, fluoride nanowires and fluoride nano-bricks.

19 . The method of claim 1 , wherein the template nanostructures are decorated with functional nanostructures.

20 . The method of claim 19 , wherein the functional nanostructures comprise one or more substances selected from the group consisting of carbon nanotubes (CNTs), polymer-wrapped CNTs, CNT films, semiconductor nanoparticles, semiconductor nanowires, semiconductor nano-bricks, metal nanoparticles, metal nanowires, metal nano-bricks, polymeric nanoparticles, polymeric nanowires, polymeric nano-bricks, ceramic nanoparticles, ceramic nanowires, ceramic nano-bricks, metal oxide nanoparticles, metal oxide nanowires, metal oxide nano-bricks, fluoride nanoparticles, fluoride nanowires and fluoride nano-bricks.

21 . A nanostructure array comprising at least one template nanostructure on a substrate deposited by the method of claim 1 .

22 . A nanostructure array comprising at least one functional nanostructure on a substrate deposited by the method of claim 14 .

Assignees

• Univ Beijing

Inventors

• Sun Wei
• Chen Yahong

Classifications

• H10D30/43

  having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels · CPC title

• H10D30/014

  of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors · CPC title

• H10K10/484

  characterised by the channel regions · CPC title

• H10K10/464

  Lateral top-gate IGFETs comprising only a single gate · CPC title

• H10K71/12

  using liquid deposition, e.g. spin coating · CPC title