Formation of carbon nanotube-containing devices

Patent metadata

Field	Value
Publication number	US-9859500-B2
Application number	US-201615046699-A
Country	US
Kind code	B2
Filing date	Feb 18, 2016
Priority date	Feb 18, 2016
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

First claim

What is claimed is:

1. A method of fabricating a carbon nanotube based device, comprising:
forming a trench having a bottom surface and sidewalls on a substrate, where the bottom surface is a metal oxide;
selectively depositing a bi-functional compound having a first reactive moiety and a second reactive moiety, wherein the first reactive moiety selectively binds to the metal oxide of the bottom surface of the trench;
converting the second reactive moiety to a diazonium salt to form a functionalized bi-functional compound bound to the bottom surface of the trench; and
reacting the diazonium salt of the functionalized bi-functional compound with a dispersion of carbon nanotubes to form a carbon nanotube bound to the second reactive moiety of the functionalized bi-functional compound, wherein the carbon nanotubes are directly bonded to the functionalized bi-functional compound without having a functional group attached to the carbon nanotubes before attachment to the bottom surface.

2. The method of claim 1 , wherein the first of the two reactive moieties is a hydroxamic acid moiety, and the second of the two reactive moieties is an aniline moiety.

3. The method of claim 2 , wherein the aniline moiety is reacted with an alkyl nitrite, cycloalkyl nitrite, aryl nitrite, nitrosonium tetrafluoroborate, or aqueous sodium nitrite in the presence of an acid, to convert the aniline moiety to the diazonium salt.

4. The method of claim 1 , wherein the bottom surface of the trench is a metal oxide surface, and the sidewalls are a non-metallic oxide.

5. The method of claim 4 , wherein the metal oxide is selected from the group consisting of HfO 2 , ZrO 2 , HfSiO, HfSiON, TiO 2 , Y 2 O 3 , Al 2 O 3 , Ta 2 O 5 , InBaTiO 3 , BaSrTiO 3 (BST), SrTiO 3 , and combinations thereof, and the hydroxamic acid moiety selectively binds to the metal oxide.

6. The method of claim 5 , further comprising forming the trench by forming a layer of the metal oxide on the substrate, and forming a patterned non-metal oxide layer on the metal oxide layer, wherein portions of the metal oxide layer surface are exposed.

7. The method of claim 5 , wherein the bi-functional compound forms a chemisorbed monolayer.

8. The method of claim 1 , wherein the dispersion of carbon nanotubes is dispersed in an organic solvent.

9. The method of claim 8 , wherein the organic solvent is toluene, tetrahydrofuran (THF), xylenes, dichloromethane (CH 2 Cl 2 ), or chloroform (CHCl 3 ).

10. The method of claim 6 , further comprising annealing the substrate, the layer of the metal oxide on the substrate, and the patterned non-metal oxide layer on the metal oxide layer at a temperature in the range of about 400° C. to about 600° C. before selectively depositing the bi-functional compound.

11. A method of fabricating a carbon nanotube based device, comprising:
forming a metal oxide layer on a substrate, wherein the metal oxide layer has an exposed surface;
forming one or more non-metal oxide islands on the metal oxide layer, wherein portions of an underlying metal oxide layer surface remain exposed;
contacting the exposed portions of the underlying metal oxide layer surface with a solution of a bi-functional compound including a first reactive moiety and a second reactive moiety, wherein the first reactive moiety is an aniline moiety and the second reactive moiety is a hydroxamic acid moiety, and wherein the hydroxamic moiety binds the bi-functional compound to the exposed metal oxide layer surface to form a monolayer of the bi-functional compound on the exposed portions of the underlying metal oxide layer surface;
reacting the aniline moiety to form a functionalized bi-functional compound; and
contacting the functionalized bi-functional compound with a carbon nanotube dispersion to form carbon nanotubes bound to the functionalized bi-functional compound, wherein the carbon nanotubes are directly bonded to the second reactive moiety of the functionalized bi-functional compound without having a functional group attached to the carbon nanotubes before contacting the functionalized bi-functional compound.

12. The method of claim 11 , further comprising annealing the one or more non-metallic oxide islands, the metal oxide layer, and the substrate at a temperature in the range of about 400° C. to about 600° C. before selectively depositing the bi-functional compound.

13. The method of claim 11 , wherein the metal oxide is selected from the group consisting of HfO 2 , ZrO 2 , HfSiO, HfSiON, TiO 2 , Y 2 O 3 , Al 2 O 3 , Ta 2 O 5 , InBaTiO 3 , BaSrTiO 3 (BST), SrTiO 3 , and combinations thereof.

14. The method of claim 11 , wherein the one or more non-metal oxide islands are silicon dioxide (SiO 2 ), silicon oxynitride (SiON), germanium oxide (GeO 2 ), or noble metals.

15. The method of claim 11 , wherein the bi-functional compound has the formula of

16. The method of claim 11 , wherein the aniline moiety is reacted with an alkyl nitrite, cycloalkyl nitrite, aryl nitrite, nitrosonium tetrafluoroborate, or aqueous sodium nitrite in the presence of an acid, to convert the aniline moiety to the diazonium salt.

Assignees

• IBM

Inventors

• Afzali-Ardakani Ali
• Kumar Bharat
• Tulevski George S

Classifications

• C01B32/158 Primary

  Carbon nanotubes · CPC title

• H01L2251/303

  Electricity · mapped topic

• H01L51/0007

  Electricity · mapped topic

• H01L51/0558

  Electricity · mapped topic

• H01L51/0048 Primary

  Electricity · mapped topic