Substrate processing apparatus, plasma light emitting apparatus and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-12463017-B2
Application number	US-202318105395-A
Country	US
Kind code	B2
Filing date	Feb 3, 2023
Priority date	Sep 18, 2020
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrates is processed; and a plasma generator including: a first gas supply pipe through which a first gas is supplied; an application electrode to which a high frequency power is applied; a reference electrode to which a reference potential is applied by being grounded; and a light emitting tube by which the first gas is photo-exited.

First claim

What is claimed is:

1 . A substrate processing apparatus comprising:
a process chamber in which a substrate is processed; and a plasma generator comprising:
a first gas supply pipe through which a first gas is supplied,
an application electrode to which a high frequency power is applied,
a reference electrode to which a reference potential is applied by being grounded, and
a light emitting tube by which the first gas is photo-exited;
a second gas supply pipe through which a second gas is supplied is connected to the light emitting tube; and an opening/closing valve configured to confine the second gas within the light emitting tube is connected to the light emitting tube, and wherein the light emitting tube is capable of emitting a light by converting the second gas confined in the light emitting tube into a plasma state in accordance with an electrical action between the application electrode and the reference electrode.

2 . The substrate processing apparatus of claim 1 , further comprising
a substrate retainer configured to support a plurality of substrates including the substrate in a multistage manner in a vertical direction, wherein the application electrode, the reference electrode and the light emitting tube are arranged in the vertical direction.

3 . The substrate processing apparatus of claim 1 , wherein a material of the light emitting tube comprises at least one selected from the group consisting of silicon oxide, magnesium fluoride and calcium fluoride.

4 . The substrate processing apparatus of claim 1 , wherein the first gas comprises a gas photo-excited by the light emitting tube to generate an active species.

5 . The substrate processing apparatus of claim 4 , wherein the first gas comprises a gas containing at least one selected from the group consisting of oxygen, nitrogen, carbon, hydrogen and a rare gas.

6 . The substrate processing apparatus of claim 1 , further comprising
an exhaust pipe connected to the light emitting tube and through which the second gas is exhausted.

7 . The substrate processing apparatus of claim 1 , wherein the second gas is converted into the plasma state in accordance with the electrical action between the application electrode and the reference electrode when the second gas is confined in the light emitting tube.

8 . The substrate processing apparatus of claim 1 , wherein the second gas comprises a gas containing at least one selected from the group consisting of nitrogen gas, light hydrogen gas, deuterium gas and a rare gas.

9 . The substrate processing apparatus of claim 1 , wherein the first gas is activated by a photoexcitation in accordance with the light emitted from the light emitting tube to process a plurality of substrates.

10 . The substrate processing apparatus of claim 9 , wherein the light emitting tube is capable of emitting the light of a wavelength within a range from 110 nm to 5 μm.

11 . The substrate processing apparatus of claim 1 , wherein the high frequency power comprises a pulse wave power.

12 . The substrate processing apparatus of claim 1 , wherein the light emitting tube is provided between the application electrode and the reference electrode.

13 . The substrate processing apparatus of claim 1 , wherein the first gas is photo-excited in the process chamber by the light emitted by converting the second gas confined in the light emitting tube into the plasma state, as a photo-excited first gas and
wherein the photo-excited first gas by the light is supplied to the substrate as an active species.

14 . A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a process chamber of a substrate processing apparatus, wherein the substrate processing apparatus comprises:
the process chamber in which the substrate is processed;
a plasma generator comprising:
a first gas supply pipe through which a first gas is supplied,
an application electrode to which a high frequency power is applied,
a reference electrode to which a reference potential is applied by being grounded, and
a light emitting tube by which the first gas is photo-exited;

a second gas supply pipe through which a second gas is supplied is connected to the light emitting tube; and
an opening/closing valve configured to confine the second gas within the light emitting tube is connected to the light emitting tube, and
wherein the light emitting tube is capable of emitting a light by converting the second gas confined in the light emitting tube into a plasma state in accordance with an electrical action between the application electrode and the reference electrode;
(b) supplying the first gas into the process chamber; and (c) activating the first gas by photo-exciting the first gas.

Assignees

• Kokusai Electric Corp

Inventors

• Takeda Tsuyoshi
• Hara Daisuke

Classifications

• H10P14/60

  of insulating materials · CPC title

• H01J37/32834

  Exhausting · CPC title

• H01J37/32568

  Relative arrangement or disposition of electrodes; moving means · CPC title

• H01J37/32146 Primary

  Amplitude modulation, includes pulsing · CPC title

• C23C16/54

  Apparatus specially adapted for continuous coating · CPC title