Metal-containing structures, and methods of treating metal-containing material to increase grain size and/or reduce contaminant concentration

Patent metadata

Field	Value
Publication number	US-12462852-B2
Application number	US-202218083431-A
Country	US
Kind code	B2
Filing date	Dec 16, 2022
Priority date	Sep 27, 2019
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

Some embodiments include a method of forming a conductive structure. A metal-containing conductive material is formed over a supporting substrate. A surface of the metal-containing conductive material is exposed to at least one radical form of hydrogen and to at least one oxidant. The exposure alters at least a portion of the metal-containing conductive material to thereby form at least a portion of the conductive structure. Some embodiments include a conductive structure which has a metal-containing conductive material with a first region adjacent to a second region. The first region has a greater concentration of one or both of fluorine and boron relative to the second region.

First claim

We claim:

1 . An assembly comprising a metal-containing conductive material having a first region adjacent a second region; the first region having a smaller average grain size per unit area relative to the second region, the metal-containing conductive material having a concentration gradient of one or both of fluorine and boron with a highest concentration of the one or both of fluorine and boron being within the second region; the metal-containing conductive material conductive structure being within a conductive level; said conductive level being one of many substantially identical conductive levels within a stack having insulative levels alternating with the conductive levels.

2 . The assembly of claim 1 wherein the average grain size per unit area of the second region is at least about 50% larger than the average grain size per unit area of the first region.

3 . The assembly of claim 1 wherein the average grain size per unit area of the second region is at least about twice as large as the average grain size per unit area of the first region.

4 . The assembly of claim 1 wherein the average grain size per unit area of the second region is at least about ten-times as large as the average grain size per unit area of the first region.

5 . A conductive structure comprising a metal-containing conductive material having a first region adjacent a second region; the first region having a greater concentration of one or both of fluorine and boron relative to the second region, the conductive structure being configured to comprise a metal-containing core which is at least partially-surrounded by the metal-containing conductive material, and wherein:
said one or both of fluorine and boron are comprised by contaminant, and the concentration of said one or both of fluorine and boron is a contaminant concentration; the metal-containing conductive material is directly adjacent to the metal-containing core at an interface; the metal-containing conductive material includes a second surface offset from the interface; and a gradient of said contaminate concentration increases in a direction from the interface toward the second surface.

6 . The conductive structure of claim 5 wherein a gradient of the contaminate concentration within the metal-containing core increases in a direction toward the interface.

7 . The conductive structure of claim 6 wherein metal-containing conductive material includes titanium nitride, and wherein the metal-containing core includes tungsten.

8 . A conductive structure comprising a metal-containing conductive material having a first region adjacent a second region; the first region having a greater concentration of one or both of fluorine and boron relative to the second region, the conductive structure being configured to comprise the metal-containing conductive material as a metal-containing core which is at least partially-surrounded by a second metal-containing conductive material, and wherein:
the second metal-containing conductive material comprises a metal nitride; the metal-containing core consists essentially of metal; said one or both of fluorine and boron are comprised by contaminant, and the concentration of said one or both of fluorine and boron is a contaminant concentration; the second metal-containing conductive material is directly adjacent to the metal-containing core at an interface; and a gradient of said contaminate concentration within the metal-containing core increases in a direction toward the interface.

9 . The conductive structure of claim 8 configured as a region of a conductive level within a stack of alternating conductive levels and insulative levels.

10 . An integrated assembly comprising:
a conductive structure supported by a semiconductor substrate; and the conductive structure comprising a metal-containing conductive material having a first region adjacent a second region; the first region having a different crystallinity relative to the second region, the conductive structure containing a concentration gradient of one or both of fluorine and boron and having a greater concentration of the one or both of fluorine and boron in the first region relative to the second region.

11 . The integrated assembly of claim 10 wherein the second region has a larger crystalline grain size than the first region.

12 . The integrated assembly of claim 10 wherein the conductive structure is coupled with driver circuitry.

13 . The integrated assembly of claim 10 wherein the conductive structure is coupled with sense-amplifier-circuitry.

14 . The integrated assembly of claim 10 wherein the conductive structure is configured as a region of a conductive level within a stack of alternating insulative levels and conductive levels.

15 . The integrated assembly of claim 14 wherein the metal-containing material includes one or both of titanium and tungsten.

Assignees

• Micron Technology Inc

Inventors

• Hopkins John D
• Greenlee Jordan D
• Xu Peng

Classifications

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/031 Primary

  of conductive parts of the interconnections · CPC title

• H10B43/40

  characterised by the peripheral circuit region · CPC title

• H10B43/35

  with cell select transistors, e.g. NAND · CPC title

• H10B43/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title