Photoacoustic gas sensor and pressure sensor

Patent metadata

Field	Value
Publication number	US-12461019-B2
Application number	US-202217938472-A
Country	US
Kind code	B2
Filing date	Oct 6, 2022
Priority date	Jun 19, 2019
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

A MEMS photoacoustic gas sensor includes a first membrane and a second membrane opposing the first membrane and spaced apart from the first membrane by a sensing volume. The MEMS photoacoustic gas sensor includes an electromagnetic source and communication with the sensing volume to deflect the first membrane and the second membrane.

First claim

What is claimed is:

1 . A MicroElectroMechanical Systems (MEMS) photoacoustic gas sensor comprising:
a lower sensor group comprising a first backplate and a first membrane configured for generating a first measurement signal; an upper sensor group coupled to the lower sensor group, the upper sensor group comprising a second backplate and a second membrane configured for generating a second measurement signal; and an electromagnetic source in communication with a sensing volume of the MEMS photoacoustic gas sensor, wherein the MEMS photoacoustic gas sensor is configured so that a position of the first backplate and the first membrane is selected independently from a position of the second backplate and the second membrane.

2 . The MEMS photoacoustic gas sensor of claim 1 , wherein the lower sensor group further comprises a first substrate structure, and wherein the upper sensor group further comprises a second substrate structure.

3 . The MEMS photoacoustic gas sensor of claim 2 , wherein a width of the first substrate structure is greater than a width of the second substrate structure.

4 . The MEMS photoacoustic gas sensor of claim 2 , wherein the second substrate structure comprises a notched substrate structure.

5 . The MEMS photoacoustic gas sensor of claim 1 , wherein the first membrane is arranged above the first backplate, wherein the second membrane is arranged above the second backplate, and wherein the upper sensor group is stacked above the lower sensor group.

6 . The MEMS photoacoustic gas sensor of claim 1 , further comprising a circuit configured for processing at least one of the first measurement signal and the second measurement signal.

7 . The MEMS photoacoustic gas sensor of claim 6 , wherein the circuit comprises a processor, a central processing unit (CPU), a microcontroller, an application specific integrated circuit (ASIC), or a field programmable gate array (FPGA).

8 . The MEMS photoacoustic gas sensor of claim 1 , wherein a first stiffness of the first membrane and a second stiffness of the second membrane are selected such that an acoustic signal travelling from a front volume of the MEMS photoacoustic gas sensor through the sensing volume to a back volume of the MEMS photoacoustic gas sensor leads to the same magnitude of deflection of the first membrane and the second membrane within a tolerance range, and wherein the first stiffness is different than the second stiffness.

9 . The MEMS photoacoustic gas sensor of claim 1 , wherein a width of the first membrane is less than a width of the second membrane.

10 . The MEMS photoacoustic gas sensor of claim 1 , wherein the electromagnetic source and the MEMS photoacoustic gas sensor are arranged inside a housing.

11 . A method of operating a MicroElectroMechanical Systems (MEMS) photoacoustic gas sensor, the method comprising:
generating a first measurement signal using a lower sensor group comprising a first backplate and a first membrane; generating a second measurement signal using an upper sensor group coupled to the lower sensor group, the upper sensor group comprising a second backplate and a second membrane; generating and/or emitting electromagnetic energy into a sensing volume of the MEMS photoacoustic gas sensor; and selecting a position of the first backplate and the first membrane and independently selecting a position of the second backplate and the second membrane for the MEMS photoacoustic gas sensor.

12 . The method of claim 11 , wherein the lower sensor group comprises a first substrate structure adjacent to the first backplate and the first membrane, and wherein the upper sensor group comprises a second substrate structure adjacent to the second backplate and the second membrane.

13 . The method of claim 12 , further comprising fabricating the lower sensor group and the upper sensor group in separate fabrication processes.

14 . The method of claim 13 , further comprising joining the lower sensor group to the upper sensor group with a joining process.

15 . The method of claim 12 , further comprising sizing a width of the first substrate structure to be greater than a width of the second substrate structure.

16 . The method of claim 11 , further comprising processing at least one of the first measurement signal and the second measurement signal.

17 . The method of claim 11 , wherein the first membrane is arranged above the first backplate, wherein the second membrane is arranged above the second backplate, and wherein the upper sensor group is stacked above the lower sensor group.

18 . A MicroElectroMechanical Systems (MEMS) photoacoustic gas sensor comprising:
a lower sensor group comprising a first perforated backplate, a first membrane, and a first substrate structure, wherein the lower sensor group is configured for generating a first measurement signal; and an upper sensor group coupled to the lower sensor group, the upper sensor group comprising a second perforated backplate, a second membrane, and a second substrate structure, wherein the upper sensor group is configured for generating a second measurement signal, wherein a first stiffness of the first membrane and a second stiffness of the second membrane are selected such that an acoustic signal travelling from a front volume of the MEMS photoacoustic gas sensor through a sensing volume of the MEMS photoacoustic gas sensor to a back volume of the MEMS photoacoustic gas sensor leads to the same magnitude of deflection of the first membrane and the second membrane within a tolerance range, and wherein the first stiffness is different than the second stiffness.

19 . The MEMS photoacoustic gas sensor of claim 18 , wherein a width of the first membrane is less than a width of the second membrane.

20 . The MEMS photoacoustic gas sensor of claim 18 , wherein the first membrane is arranged above the first backplate, wherein the second membrane is arranged above the second backplate, and wherein the upper sensor group is stacked above the lower sensor group.

Assignees

• Infineon Technologies Ag

Inventors

• Manz Johannes
• Glacer Christoph
• Tumpold David

Classifications

• G01N29/2425

  optoacoustic fluid cells therefor · CPC title

• G01N2021/1704

  in gases · CPC title

• G01N33/0027

  concerning the detector · CPC title

• G01L13/026

  involving double diaphragm · CPC title

• G01L9/0073

  using a semiconductive diaphragm · CPC title