Method of ultrafast-pulsed laser deposition coupled with plasma lattice and device thereof

Patent metadata

Field	Value
Publication number	US-12460290-B2
Application number	US-202318516189-A
Country	US
Kind code	B2
Filing date	Nov 21, 2023
Priority date	Nov 28, 2022
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

The present disclosure provides a method of an ultrafast-pulsed laser deposition and a device thereof, wherein a single emitted femtosecond pulse is split, and the split pulses are synchronized in the time domain, and then coupled with each other to form a plasma grating or lattice to excite the target material once; then multiple pulsed lasers are sequentially coupled multiple times with the plasma gratings or lattices to excite the target material multiple times, and the excited target material is deposited and reacted on the substrate to form a thin film.

First claim

What is claimed is:

1 . A method of an ultrafast-pulsed laser deposition, comprising:
step 1: after splitting a femtosecond-pulsed laser beam, focalizing split femtosecond-pulsed laser beams to form a plasma channel based on a nonlinear effect and to generate a femtosecond laser filament; synchronizing the femtosecond-pulsed laser beam by delay synchronization processing so as to form a plasma grating or a plasma lattice by the femtosecond laser filament coupled with each other non-collinearly and crossly; and exciting a target material with the plasma grating or the plasma lattice; step 2: emitting multiple ultrafast-pulsed laser beams as post pulses; coupling the post pulses with the plasma grating or the plasma lattice sequentially, by controlling a first delay between the post pulses and the plasma grating or the plasma lattice and a second delay between the post pulses thereof, so as to form a regenerated plasma grating or a regenerated plasma lattice with multi-stage cascade in a time domain; and exciting the target material for multiple times; and step 3: exciting and ablating the target material by adjusting the ultrafast-pulsed laser beams coupled with the regenerated plasma grating or the regenerated plasma lattice, to form a thin film with a required thickness by a deposition of ablated particles on a substrate, by controlling the time.

2 . The method according to claim 1 , wherein in the step 1, each of the split femtosecond-pulsed laser beams possesses energy greater than 0.5 mJ, a repetition frequency of 1 Hz-1 MHz, a center wavelength of 200-2,500 nm, and a pulse width of 5-1,000 fs.

3 . The method according to claim 2 , wherein in the step 1, the split femtosecond-pulsed laser beams possess an angle of 5 to 21° therebetween.

4 . The method according to claim 1 , wherein in the step 2, the multiple ultrafast-pulsed laser beams comprise at least one of a femtosecond-pulsed laser, a picosecond-pulsed laser, or a nanosecond-pulsed laser.

5 . The method according to claim 4 , wherein in the step 2, the first delay between the post pulses and the plasma grating or the plasma lattice is 10 ps to 1 ns.

6 . The method according to claim 5 , wherein in the step 2, an incident angle between the post pulses and the plasma grating or the plasma lattice is 7 to 21°.

7 . The method according to claim 1 , wherein in the step 3, the deposition is performed in a deposition chamber set with a rare gas environment, wherein the rare gas is at least one of helium and argon.

8 . The method according to claim 1 , wherein in the step 1, two or three split femtosecond-pulsed laser beams are formed, when crossly coupled, two femtosecond laser filaments are non-collinearly and crossly coupled to form the plasma grating, and three femtosecond laser filaments are noncoplanarly and crossly coupled to form the plasma lattice.

Assignees

• Chongqing Huapu Information Tech Co Ltd
• Chongqing Huapu Intelligent Equipment Co Ltd
• Chongqing Huapu Quantum Tech Co Ltd
• Chongqing Huapu Scient Instrument Co Ltd
• Yunnan Huapu Quantum Mat Co Ltd
• Roi Optoelectronics Tech Co Ltd
• Guangdong Roi Optoelectronics Tech Co Ltd
• Chongqing Institute Of East China Normal Univ
• Univ East China Normal

Inventors

• Zeng Heping
• Hu Mengyun
• Qiao Yu

Classifications

• C03C17/22

  with other inorganic material (C03C17/34, C03C17/44 take precedence) · CPC title

• C03C2217/282

  Carbides, silicides · CPC title

• C03C2217/281

  Nitrides · CPC title

• C03C2218/151

  by vacuum evaporation · CPC title

• C23C14/0652

  Silicon nitride · CPC title