Phase-change memory device with conductive cladding

Patent metadata

Field	Value
Publication number	US-12453296-B2
Application number	US-202218051561-A
Country	US
Kind code	B2
Filing date	Nov 1, 2022
Priority date	Nov 1, 2022
Publication date	Oct 21, 2025
Grant date	Oct 21, 2025

Abstract

A device structure for a phase-change memory device is disclosed. The device structure includes a top electrode, a phase-change material that is recessed between two layers of resistive liner material, and a conductive material. The conductive material contacts the sidewall of the top electrode, the sidewall of the phase-change material, and a portion of a top surface and a bottom surface of each of the two layers of the resistive liner material. The device structure includes a heater contacting a bottom electrode and the bottom layer of the resistive liner material. The heater is in a first bilayer dielectric. A second bilayer dielectric is under the top electrode.

First claim

What is claimed is:

1. A phase-change memory device structure comprising:
a top electrode;
a phase-change material, wherein the phase-change material is recessed between a top resistive liner material layer and a bottom resistive liner material layer; and
a conductive material physically contacting:
a sidewall of the top electrode;
the phase-change material;
a top surface of the top resistive liner material layer; and
a bottom surface of the bottom resistive liner material layer.

2. The phase-change memory device structure of claim 1 , further comprising:
a heater contacting: (i) a bottom electrode and (ii) the bottom resistive liner material layer, wherein the heater is in a first bilayer dielectric; and
a second bilayer dielectric under the top electrode.

3. The phase-change memory device structure of claim 2 , wherein a top dielectric layer of the first bilayer dielectric is recessed under the bottom resistive liner material layer.

4. The phase-change memory device structure of claim 3 , wherein a bottom dielectric layer of the second bilayer dielectric is recessed above the top resistive liner material layer.

5. The phase-change memory device structure of claim 1 , wherein the top resistive liner material layer and the bottom resistive liner material layer each extend beyond a sidewall of the phase-change material.

6. The phase-change memory device structure of claim 1 , wherein the top resistive liner material layer and the bottom resistive liner material layer each include an outer portion surrounded by the conductive material.

7. The phase-change memory device structure of claim 4 , wherein a top layer of the first bilayer dielectric and a bottom layer of the second bilayer dielectric are each composed of a same dielectric material.

8. The phase-change memory device structure of claim 7 , wherein the top layer of the first bilayer dielectric and the bottom layer of the second bilayer dielectric have a same length.

9. The phase-change memory device structure of claim 4 , wherein a bottom layer of the first bilayer dielectric and a top layer of the second bilayer dielectric are each composed of a low-k dielectric material.

10. The phase-change memory device structure of claim 1 , wherein the phase-change material has a disk shape.

11. A phase-change memory device structure comprising:
a heater on a portion of a bottom electrode;
a first dielectric material around a bottom portion of the heater;
a second dielectric material around a top portion of the heater, wherein the second dielectric material is recessed;
a first resistive liner on the second dielectric material;
a phase-change material recessed on a portion of the first resistive liner;
a second resistive liner above the phase-change material;
a third dielectric material on the second resistive liner, wherein the third dielectric material is recessed on the second resistive liner;
a fourth dielectric material under a top electrode; and
a conductive material contacting at least a sidewall of the top electrode, the phase-change material, and a portion of a top surface and a bottom surface of the first resistive liner and the second resistive liner.

12. The phase-change memory device structure of claim 11 , wherein the second dielectric material and the third dielectric material are recessed with a horizontal length that is less than a horizontal length of the phase-change material.

13. The phase-change memory device structure of claim 11 , wherein the second dielectric material and the third dielectric material are each composed of a same dielectric material.

14. The phase-change memory device structure of claim 12 , wherein the first resistive liner and the second resistive liner extend beyond a sidewall of the phase-change material.

15. The phase-change memory device structure of claim 13 , wherein:
the first resistive liner and the second resistive liner have a same length as the second dielectric material and the third dielectric material; and
the phase-change material has a disk shape.

Assignees

• IBM

Inventors

• Cohen Guy M
• Cheng Kangguo
• Li Juntao
• Xie Ruilong
• Frougier Julien

Classifications

• H10N70/8413

  adapted for resistive heating · CPC title

• H10N70/231 Primary

  based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title

• H10N70/063 Primary

  by etching of pre-deposited switching material layers, e.g. lithography · CPC title

• H10N70/884

  based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883) · CPC title

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title