Liquid metal thermal interface

Patent metadata

Field	Value
Publication number	US-12451402-B2
Application number	US-202217747932-A
Country	US
Kind code	B2
Filing date	May 18, 2022
Priority date	May 19, 2021
Publication date	Oct 21, 2025
Grant date	Oct 21, 2025

Abstract

Liquid metal thermal interface materials and their uses in electronics assembly are described. In one implementation, a semiconductor assembly includes: a semiconductor die; a heat exchanger; and a thermal interface material (TIM) alloy bonding the semiconductor die to the heat exchanger without using a separate metallization layer on a surface of the semiconductor die or a surface of the heat exchanger. The TIM alloy may be formed by placing a TIM material between the semiconductor die and the heat exchanger, the TIM material comprising a first liquid metal foam in touching relation with the surface of the semiconductor die, a second liquid metal foam in touching relation with the surface of the heat exchanger.

First claim

What is claimed is:

1. A semiconductor assembly, comprising:
a semiconductor die;
a heat exchanger; and
a thermal interface material (TIM) alloy bonding the semiconductor die to the heat exchanger without a separate metallization layer on a surface of the semiconductor die or a surface of the heat exchanger, the TIM alloy comprising:
a first liquid metal foam in touching relation with the surface of the semiconductor die,
a second liquid metal foam in touching relation with the surface of the heat exchanger, and
a thermally conductive metal foil between and in touching relation with the first liquid metal foam and the second liquid metal foam, the thermally conductive metal foil comprising multiple first regions and multiple second regions, the first regions having a first thickness and the second regions having a second thickness greater than the first thickness and forming a patterned surface on the thermally conductive metal foil.

2. A semiconductor assembly, comprising:
a semiconductor die;
a heat exchanger; and
a thermal interface material (TIM) alloy bonding the semiconductor die to the heat exchanger without a separate metallization layer on a surface of the semiconductor die or a surface of the heat exchanger, the TIM alloy comprising:
a first liquid metal in touching relation with the surface of the semiconductor die,
a second liquid metal in touching relation with the surface of the heat exchanger, and
a thermally conductive metal foil between and in touching relation with the first liquid metal and the second liquid metal, the thermally conductive metal foil comprising multiple first regions and multiple second regions, the first regions having a first thickness and the second regions having a second thickness greater than the first thickness and forming a patterned surface on the thermally conductive metal foil.

3. The semiconductor assembly of claim 2 , wherein the thermally conductive metal foil consists essentially of indium or an indium alloy.

4. The semiconductor assembly of claim 1 , wherein the thermally conductive metal foil consists essentially of indium or an indium alloy.

5. The semiconductor assembly of claim 1 , wherein each of the first liquid metal foam and the second liquid metal foam comprises:
gallium oxide; and
liquid gallium or a liquid gallium alloy.

6. The semiconductor assembly of claim 5 , wherein the thermally conductive metal foil consists essentially of indium or an indium alloy.

7. The semiconductor assembly of claim 1 , wherein the heat exchanger comprises a heat sink, a heat spreader, or a semiconductor package lid.

8. The semiconductor assembly of claim 7 , wherein the heat exchanger comprises the heat sink.

9. The semiconductor assembly of claim 7 , wherein the heat exchanger comprises the heat spreader or the semiconductor package lid.

10. The semiconductor assembly of claim 2 , wherein each of the first liquid metal and the second liquid metal comprises gallium.

11. The semiconductor assembly of claim 10 , wherein each of the first liquid metal and the second liquid metal comprises gallium and indium.

12. The semiconductor assembly of claim 11 , wherein the thermally conductive metal foil consists essentially of indium or an indium alloy.

13. The semiconductor assembly of claim 2 , wherein the heat exchanger comprises a heat sink, a heat spreader, or a semiconductor package lid.

14. The semiconductor assembly of claim 13 , wherein the heat exchanger comprises the heat sink.

15. The semiconductor assembly of claim 13 , wherein the heat exchanger comprises the semiconductor package lid.

Assignees

• Indium Corp

Inventors

• Berntson Ross B

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W76/67

  characterised by their materials · CPC title

• H10W76/63

  characterised by their shape or disposition, e.g. between cap and walls of a container · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title