Charge sensing device with gate voltage selected to operate around the charge neutrality point and tune the quantum capacitance
US-11892473-B2 · Feb 6, 2024 · US
Charge sensor
US12449461B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12449461-B2 |
| Application number | US-202318372416-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 25, 2023 |
| Priority date | May 28, 2021 |
| Publication date | Oct 21, 2025 |
| Grant date | Oct 21, 2025 |
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Abstract
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A charge sensor according to the present disclosed technology includes a quantum dot to have a first end connected to an input terminal via a first tunnel junction and a second end connected to an output terminal via a second tunnel junction, and an inductor connected in parallel to the quantum dot.
First claim
Opening claim text (preview).
The invention claimed is: 1. A charge sensor comprising: a quantum dot having a first end connected to an input terminal via a first tunnel junction and a second end connected to an output terminal via a second tunnel junction; and an inductor connected in parallel to the quantum dot. 2. The charge sensor according to claim 1 , wherein a resonance frequency calculated by an inductance of the inductor and an equivalent off-capacitance, when the quantum dot is in an off state, is equal to a frequency of a high-frequency signal input. 3. The charge sensor according to claim 2 , further comprising a capacitor connected in series to the inductor. 4. The charge sensor according to claim 2 further comprising: an input matching circuit to match an impedance of the input terminal with an input impedance in an on state at a frequency of the high-frequency signal; and an output matching circuit to match an output impedance with an impedance of the output terminal at a frequency of the high-frequency signal.
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Classifications
Automatic matching of load impedance to source impedance · CPC title
using inductive elements · CPC title
Semiconductor qubit devices comprising a plurality of quantum mechanically interacting semiconductor quantum dots, e.g. Loss-DiVincenzo spin qubits · CPC title
Single electron transistors; Coulomb blockade transistors · CPC title
Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title
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Frequently asked questions
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- What does patent US12449461B2 cover?
- A charge sensor according to the present disclosed technology includes a quantum dot to have a first end connected to an input terminal via a first tunnel junction and a second end connected to an output terminal via a second tunnel junction, and an inductor connected in parallel to the quantum dot.
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification G01R29/24. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Oct 21 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).