Quantum dot material and method for producing quantum dot material
US-11667838-B2 · Jun 6, 2023 · US
US12448563B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12448563-B2 |
| Application number | US-202318226737-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 26, 2023 |
| Priority date | Oct 12, 2018 |
| Publication date | Oct 21, 2025 |
| Grant date | Oct 21, 2025 |
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A light emitting device including a first electrode and a second electrode facing each other, a quantum dot emission film disposed between the first electrode and the second electrode, and a charge auxiliary layer disposed between the emission film and the first electrode, between the emission film and the second electrode, or between the emission film and the first electrode and between the emission film and the second electrode, wherein the quantum dot emission film includes a first surface facing the charge auxiliary layer and an opposite second surface. A manufacturing method of making the light emitting device, and a display device including the same.
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What is claimed is: 1. A quantum dot emission film comprising a first surface and an opposite second surface; wherein the quantum dot emission film comprises a first emission layer comprising first quantum dots that constitute at least a portion of the first surface, and a second emission layer comprising second quantum dots that constitute at least a portion of the second surface, wherein the first quantum dots and the second quantum dots do not include lead, and the first quantum dots and the second quantum dots comprise a halide on at least a portion of the surface of the quantum dots, wherein an amount of the halide in the quantum dot emission film is greater than or equal to about 0.01 parts per million and less than or equal to about 0.5 parts per million based on a light emitting surface of 1 square centimeter as determined by ion chromatograph. 2. The emission film of claim 1 , wherein the emission film does not comprise cadmium. 3. The emission film of claim 1 , wherein the first quantum dots and the second quantum dots do not include an organic thiol compound on the surfaces of the quantum dots. 4. The emission film of claim 1 , wherein the first and the second quantum dots comprise zinc, and wherein a ratio of zinc peak intensity relative to a halide peak intensity in the emission film is greater than or equal to about 3%, as determined by X-ray photoelectron spectroscopy. 5. The emission film of claim 1 , wherein the first quantum dots and the second quantum dots emit identical color light to each other. 6. The emission film of claim 1 , wherein the first quantum dots and the second quantum dots emit different color light from each other. 7. The emission film of claim 1 , wherein the first quantum dots and the second quantum dots comprise a core, and a shell disposed on the core. 8. The emission film of claim 7 , wherein the core comprises a first semiconductor nanocrystal, and the shell comprises a second semiconductor nanocrystal having a different composition than the first semiconductor nanocrystal, and the first semiconductor nanocrystal and the second semiconductor nanocrystal independently comprise a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element or compound, a Group I-III-VI compound, a Group I-II-IV-VI compound, or a combination thereof. 9. The emission film of claim 8 , wherein the first semiconductor nanocrystal comprises InP, InZnP, ZnSe, ZnSeTe, or a combination thereof. 10. The emission film of claim 7 , wherein an outermost layer of the shell comprises zinc and sulfur. 11. The emission film of claim 1 , wherein the first quantum dots and the second quantum dots further comprise an organic ligand on the surfaces thereof, and the organic ligand comprises RCOOH, RNH 2 , R 2 NH, R 3 N, RH 2 PO, R 2 HPO, R 3 PO, RH 2 P, R 2 HP, R 3 P, ROH, RCOOR, RPO(OH) 2 , RHPOOH, R 2 POOH, or a combination thereof, wherein R is the same or different and independently comprises a C1 to C40 substituted or unsubstituted aliphatic hydrocarbon, or a C6 to C20 substituted or unsubstituted aromatic hydrocarbon, or a combination thereof. 12. The emission film of claim 11 , wherein the organic ligand comprises a C6 to C40 aliphatic carboxylic acid compound. 13. The emission film of claim 1 , wherein the emission film has a thickness of greater than or equal to about 10 nanometers. 14. The emission film of claim 1 , wherein the emission film has a thickness of greater than or equal to about 30 nanometers. 15. The emission film of claim 1 , wherein the first emission layer has a thickness of greater than or equal to about 5 nanometers, and the second emission layer has a thickness of greater than or equal to about 5 nanometers. 16. The emission film of claim 1 , wherein the emission film further comprises a third emission layer having a third surface disposed between the first emission layer and the second emission layer and comprising third quantum dots, wherein the third quantum dots that constitute at least a portion of the third surface comprise a halide on at least a portion of their surfaces. 17. The emission film of claim 16 , wherein the third quantum dots emit the same color light as the first quantum dots and the second quantum dots. 18. The emission film of claim 16 , wherein the third quantum dots emit a different color light from the first quantum dots and the second quantum dots. 19. The emission film of claim 16 , wherein the third emission layer has a thickness of greater than or equal to about 5 nanometers and less than or equal to about 40 nanometers.
Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title
Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title
Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values · CPC title
comprising stacked EL layers within one EL unit · CPC title
comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title
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