On-chip dual-mode transmission line with spoof surface plasmon based on balun

US12444820B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12444820-B2
Application numberUS-202418434262-A
CountryUS
Kind codeB2
Filing dateFeb 6, 2024
Priority dateNov 22, 2022
Publication dateOct 14, 2025
Grant dateOct 14, 2025

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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An on-chip dual-mode transmission line with an spoof surface plasmon based on a balun includes a dual-mode transmission line located in the intermediate, the balun structures symmetrically located at both terminals of the dual-mode transmission line, and pad structures and excitation portions located outside the balun structures. The dual-mode transmission line comprises two metal strip lines that are the same in structure and parallel to each other, and the branches located between the two metal strip lines. The dual-mode transmission line can simultaneously support the transmissions of the odd-mode spoof surface plasmon signal and the even-mode spoof surface plasmon signal, and is not only suitable for III-V chips such as gallium arsenide and silicon nitride, but also suitable for technologies such as other chips and printed circuit boards.

First claim

Opening claim text (preview).

What is claimed is: 1. An on-chip dual-mode transmission line with an spoof surface plasmon based on a balun, wherein a dual-mode transmission line structure comprises a dielectric adhesive, a dielectric material, a metal ground structure, metal strip lines, odd-mode signal pads, even-mode signal pads, four-port grounding terminals, and a dual-mode transmission line located in an intermediate of the dual-mode transmission line structure, a balun structure symmetrically located at both terminals of the dual-mode transmission line, and a pad feeding structure located outside each of the balun structure; the dual-mode transmission line includes two metal strip lines parallel to each other and branches located between the two metal strip lines; each of the balun structure is formed by coupling two layers of metal structures, including upper metal meander lines, a lower metal meander line, a main feeding line, and a metal connection line; pads of each of the pad feeding structure include the odd-mode signal pad, the even-mode signal pad and the four-port grounding terminals, each of the four-port grounding terminals is in a cuboid metal via structure, and is configured to connect a metal layer where the dual-mode transmission line is located with the metal ground structure covered under the dielectric material; connection lines of each of the pad feeding structure are signal connection lines led out from the odd-mode signal pad and the even-mode signal pad, including the metal connection line and the main feeding line; the lower metal meander line is in a C-shape, the odd-mode signal pad is connected to one terminal of the lower metal meander line through the metal connection line, and the even-mode signal pad is connected to a ring line through the main feeding line; the two metal strip lines are respectively connected at openings of each of the ring lines, and both ports of each of the two metal strip lines are respectively connected to an inward port of each of the upper metal meander lines, the inward port is a port facing towards an intermediate of the transmission line structure; two outward ports of the two upper metal meander lines are suspended in midair. 2. The on-chip dual-mode transmission line with the spoof surface plasmon based on the balun according to claim 1 , wherein the balun structure further has a second structure, that is, the two inward ports facing towards the intermediate of the transmission line structure of the two upper metal meander lines are respectively connected to the two metal strip lines, and the two outward ports of the two upper metal meander lines are respectively connected to a same four-port grounding terminal located in an intermediate of the pad feeding structure through balun grounding lines, one terminal of the lower metal meander line is connected to the odd-mode signal pad through a tapered balun input terminal structure, and another terminal of the lower metal meander line is suspended in midair. 3. The on-chip dual-mode transmission line with the spoof surface plasmon based on the balun according to claim 1 , wherein the balun structure further has a third structure, that is, the two inward ports facing towards the intermediate of the transmission line structure of the two upper metal meander lines are respectively connected to the two metal strip lines, or respectively connected to the two metal strip lines through quarter rings and trapezoidal connection blocks, two outward ports of the two upper metal meander lines are connected to two four-port grounding terminals through balun grounding lines, one terminal of the lower metal meander line is connected to the odd-mode signal pad through a tapered balun input terminal structure and another terminal of the lower metal meander line is suspended in midair. 4. The on-chip dual-mode transmission line with the spoof surface plasmon based on the balun according to claim 1 , wherein the balun structure further has a fourth structure that is a triple-conductor edge-coupled balun structure, with output ports of two symmetrical triple-conductor edge-coupled baluns respectively connected to both terminals of each of the metal strip lines; a triple-conductor edge-coupled balun main body includes a triple-conductor structure formed by an excitation strip line, an internal coupling line and an external coupling line, and the excitation strip line, the internal coupling line and the external coupling line are all placed above the dielectric adhesive; the excitation strip line is a metal strip line bent in multiple times, one terminal of the excitation strip line is connected to the odd-mode signal pad through the odd-mode signal input port, and another terminal of the excitation strip line is suspended in midair; the internal coupling line is two symmetrical metal strip lines placed on an inward side of the excitation strip line; the external coupling line is two symmetrical metal strip lines placed on an outward side of the excitation strip line; one terminal of a cross-layer composite line is initiated from a tail terminal of the internal coupling line, firstly extended downward towards a bottom portion of the dielectric adhesive, and then extended parallel to the bottom portion of the dielectric adhesive after being bent at 90 degrees, subsequently passing under the excitation strip line, until being reached under a tail terminal of the external coupling line, then extended upwards to connect to a tail terminal of the external coupling line to converge signals on the internal coupling line and the external coupling line into one path signal, and the one path signal is outputted from a balun output port through a composite output line; the internal coupling line is divided into two meander lines symmetrical about a central axis of the balun structure, and intermediate portions of the two segments of the internal coupling line are jointly connected to one terminal of an internal grounding line, and are connected to the four-port grounding terminal by an internal coupling line grounding port at another terminal of the internal grounding line; a metal protective ring wall is two segments of C-shaped metal walls symmetrically distributed outside the external coupling line, a bottom of the C-shaped metal wall is in contact with the metal ground structure; one terminal of the external coupling line is connected to the metal protective ring wall, a lower grounding line and an upper grounding line are respectively led out from the two segments of the metal protective ring wall and are respectively connected to the adjacent four-port grounding pad through a lower grounding port and an upper grounding port. 5. The on-chip dual-mode transmission line with the spoof surface plasmon based on the balun according to claim 1 , wherein the balun structure further has a fifth structure, the fifth structure includes an odd-mode probe pad, an even-mode probe pad, ground probe pads, lower large plates, lower small plates; the odd-mode probe pad, the even-mode probe pad and the ground probe pads are located above the dielectric adhesive, the lower large plates and the lower small plates are located above the dielectric material; small-scale metal vias are arranged between the odd-mode probe pad and the lower small plate, between the even-mode probe pad and the lower small plate, and between the ground probe pads and the lower large plates, a back metallic via is arranged below the lower large plate, and the lowest portion of the back metallic via is in contact with the metal ground structure; in the fifth balun structure, a right-angle strip-shaped input line is located above the dielectric material, and is a metal strip line with a bent of 90°, one terminal of the right-angle strip-shaped input line is connected to the lower small plate below the odd-mode probe pad, and another terminal of t

Assignees

Inventors

Classifications

  • Auxiliary devices (coupling devices of the waveguide type H01P5/00) · CPC title

  • for coupling balanced lines or devices with unbalanced lines or devices · CPC title

  • Structural form of radiating elements, e.g. cone, spiral, umbrella; {Particular materials used therewith}(H01Q1/08, H01Q1/14 take precedence) · CPC title

  • Structural association of antennas with earthing switches, lead-in devices or lightning protectors · CPC title

  • H01P3/08Primary

    Microstrips; Strip lines · CPC title

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What does patent US12444820B2 cover?
An on-chip dual-mode transmission line with an spoof surface plasmon based on a balun includes a dual-mode transmission line located in the intermediate, the balun structures symmetrically located at both terminals of the dual-mode transmission line, and pad structures and excitation portions located outside the balun structures. The dual-mode transmission line comprises two metal strip lines t…
Who is the assignee on this patent?
Univ Southeast
What technology area does this patent fall under?
Primary CPC classification H01P3/08. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 14 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).