Semiconductor device and method of forming selective EMI shielding with slotted substrate

Patent metadata

Field	Value
Publication number	US-12444694-B2
Application number	US-202217647055-A
Country	US
Kind code	B2
Filing date	Jan 5, 2022
Priority date	Jan 5, 2022
Publication date	Oct 14, 2025
Grant date	Oct 14, 2025

Abstract

A semiconductor device has a substrate and a slot formed in the substrate. A first electrical component is disposed over the substrate adjacent to the slot. An encapsulant is deposited over the first electrical component with a surface of the encapsulant coplanar to a surface of the substrate within the slot. A shielding layer is formed over the encapsulant and physically contacting the surface of the substrate within the slot. The substrate is singulated to form a semiconductor package with the first electrical component after forming the shielding layer.

First claim

What is claimed:

1. A method of making a semiconductor device, comprising:
providing a substrate including a plurality of conductive layers and a plurality of insulating layers interleaved between the conductive layers;
forming a slot completely through the substrate;
disposing a first electrical component over the substrate adjacent to the slot, wherein the substrate includes the plurality of conductive layers and the plurality of insulating layers prior to disposing the first electrical component over the substrate;
depositing an encapsulant over the first electrical component and substrate after forming the slot, wherein a surface of the encapsulant is coplanar to a surface of the substrate within the slot, and wherein the slot remains devoid of the encapsulant;
forming a shielding layer over the encapsulant and physically contacting the surface of the substrate within the slot; and
singulating the substrate to form a semiconductor package with the first electrical component after forming the shielding layer.

2. The method of claim 1 , further including singulating the substrate by cutting from a first end of the slot to a second end of the slot.

3. The method of claim 1 , further including:
disposing a mask over the substrate prior to forming the shielding layer; and
removing the mask after forming the shielding layer.

4. The method of claim 1 , wherein the semiconductor package is round.

5. The method of claim 1 , further including disposing a second electrical component over the substrate after forming the shielding layer.

6. The method of claim 1 , wherein a plurality of semiconductor packages remains connected by the substrate after the step of forming the shielding layer is complete.

7. A method of making a semiconductor device, comprising:
providing a substrate including a conductive layer and an insulating layer;
forming a slot completely through the substrate;
disposing a first electrical component over the substrate after the substrate has already been formed to include the conductive layer and the insulating layer;
depositing an encapsulant over the substrate after the slot is already formed in the substrate, wherein a surface of the encapsulant is adjacent to the slot and the slot remains devoid of the encapsulant;
forming a shielding layer over the encapsulant and extending over a surface of the substrate within the slot; and
singulating the substrate to form a semiconductor package after forming the shielding layer.

8. The method of claim 7 , further including singulating the substrate by cutting from a first end of the slot to a second end of the slot.

9. The method of claim 7 , further including:
disposing a mask over the substrate prior to forming the shielding layer; and
removing the mask after forming the shielding layer.

10. The method of claim 9 , wherein the mask completely covers the substrate except for where the encapsulant was deposited.

11. The method of claim 7 , wherein the semiconductor package is round or irregularly shaped.

12. The method of claim 7 , further including disposing a second electrical component over the substrate after forming the shielding layer and prior to singulating the substrate.

13. The method of claim 7 , wherein a plurality of semiconductor packages remains connected by the substrate after the step of forming the shielding layer is complete.

14. A method of making a semiconductor device, comprising:
providing a substrate including a slot formed completely through the substrate;
depositing an encapsulant over the substrate after the slot is formed completely through the substrate, wherein the slot remains devoid of the encapsulant;
forming a shielding layer over the substrate and into the slot; and
singulating the substrate to form a semiconductor package after forming the shielding layer.

15. The method of claim 14 , further including singulating the substrate by cutting from a first portion of the slot to a second portion of the slot.

16. The method of claim 14 , further including:
disposing a mask over the substrate prior to forming the shielding layer; and
removing the mask after forming the shielding layer.

17. The method of claim 14 , wherein the semiconductor package is round.

18. The method of claim 14 , further including disposing an electrical component over the substrate after forming the shielding layer.

19. The method of claim 14 , wherein a plurality of semiconductor packages remains connected by the substrate after the step of forming the shielding layer is complete.

20. A method of making a semiconductor device, comprising:
providing a substrate including a slot formed in the substrate;
depositing an encapsulant over the substrate after the slot is already formed through the substrate, wherein the slot remains devoid of the encapsulant; and
forming a shielding layer over the encapsulant and into the slot.

21. The method of claim 20 , further including depositing the encapsulant with a surface of the encapsulant coplanar to a surface of the substrate within the slot.

22. The method of claim 20 , further including:
disposing a mask over the substrate; and
forming the shielding layer over the mask.

23. The method of claim 20 , wherein the slot is curved.

24. The method of claim 20 , further including disposing an electrical component over the substrate outside the encapsulant.

25. The method of claim 20 , further including forming a plurality of semiconductor packages on the substrate.

Assignees

• Stats Chippac Pte Ltd

Inventors

• Jung Jinhee
• Kim Changoh
• Lee Jiwon
• Jang Yujeong

Classifications

• H10W90/00

  Package configurations · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10W74/014

  using batch processing · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W42/20 Primary

  protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons · CPC title