Planar cell nanoheater design and cell architecture for programmable phase change filters

Patent metadata

Field	Value
Publication number	US-12443059-B2
Application number	US-202217958803-A
Country	US
Kind code	B2
Filing date	Oct 3, 2022
Priority date	Oct 5, 2021
Publication date	Oct 14, 2025
Grant date	Oct 14, 2025

Abstract

A phase change filter is formed by an arrangement of dots, wherein each dot is made of a phase change material. A heating layer of electrically conductive material extends under the arrangement of dots. Current passing through the heating layer changes the dots between two states to alter attenuation of light passing through the filter.

First claim

The invention claimed is:

1. A phase change filter, comprising:
a plurality of phase change material dots; and
a heating layer of electrically conductive material;
wherein the heating layer comprises a plurality of heating zones, each heating zone comprising one or more conductive fingers; and
wherein a phase change material dot of said plurality of phase change material dots is positioned on each heating zone of the heating layer.

2. The phase change filter of claim 1 , wherein said one or more conductive fingers comprises two conductive fingers in each heating zone of the heating layer.

3. The phase change filter of claim 1 , wherein the phase change material dots are arranged in columns and rows of regular spacing.

4. The phase change filter of claim 3 , wherein a pitch of the phase change material dots in one or more of the columns and rows is in a range of 500 nm to 1000 nm.

5. The phase change filter of claim 3 , wherein a pitch of the phase change material dots in one or more of the columns and rows is such that light wavelengths in a filtering range are attenuated by at least 40 percent to 60 percent when the phase change material dots are in a first state, wherein the filtering range comprises a wavelength range of 900 nm to 1000 nm.

6. The phase change filter of claim 3 , wherein a pitch of the phase change material dots in one or more of the columns and rows is such that light wavelengths in a filtering range are attenuated by at least 40 percent to 60 percent when the phase change material dots are in a first state, wherein the filtering range is comprised within the wavelength range of 920 nm to 960 nm.

7. The phase change filter of claim 3 , wherein a pitch of the phase change material dots in one or more of the columns and rows is such that light wavelengths in an offset filtering range are attenuated by at least 40 percent to 60 percent when the phase change material dots are in a second state, wherein the offset filtering range is non-overlapping with a filtering range.

8. The phase change filter of claim 1 , wherein light wavelengths in a filtering range are attenuated by at least 40 percent to 60 percent when the phase change material dots are in a first state and wherein light wavelengths in the filtering range are attenuated by less than 20 percent when the phase change material dots are in a second state.

9. The phase change filter of claim 8 , wherein the first state is an amorphous state, and the second state is a crystalline state.

10. The phase change filter of claim 1 , wherein the phase change filter is a notch filter with a notch of the notch filter having a central frequency in a range of 900 nm to 1000 nm.

11. The phase change filter of claim 1 , wherein an electrically conductive material of the heating layer comprises Indium Tin Oxide.

12. The phase change filter of claim 1 , wherein a material and a thickness of the heating layer are transparent to light in a filtering range, wherein transparent means an attenuation of 20 percent or less.

13. The phase change filter of claim 1 , wherein the heating layer has a thickness of between 10 nm and 40 nm.

14. The phase change filter of claim 1 , wherein each conductive finger has a smallest width in a plane of the heating layer in a range of 50 nm to 150 nm.

15. The phase change filter of claim 1 , wherein a gap between conductive fingers has a maximum width in a plane of the heating layer in a range of 50 nm to 150 nm.

16. The phase change filter of claim 1 , wherein a length of each conductive finger in a plane of the heating layer is of at least 250 nm.

17. An image sensor, comprising:
a layer of light sensitive elements;
a layer of color and infrared filters; and
the phase change filter of claim 1 stacked with said layer of color and infrared filters.

18. A method of fabricating a phase change filter, comprising:
forming a heating layer of electrically conductive material, the heating layer comprising a plurality of heating zones, each heating zone comprising one or more conductive fingers; and
forming a plurality of phase change material dots, wherein a phase change material dot of said plurality of phase change material dots is positioned on each heating zone of the heating layer.

19. A phase change filter, comprising:
a plurality of phase change material dots, wherein the phase change material dots are arranged in columns and rows of regular spacing, wherein a pitch of the phase change material dots in the columns and rows is in a range of 500 nm to 1000 nm.

20. The phase change filter of claim 19 , wherein the pitch of the phase change material dots in one or more of the columns and rows is such that light wavelengths in a filtering range are attenuated by at least 40 percent to 60 percent when the phase change material dots are in a first state, and wherein the filtering range is within a wavelength range of 900 nm to 1000 nm.

21. The phase change filter of claim 20 , wherein the filtering range is within a wavelength range of 920 nm to 960 nm.

22. The phase change filter of claim 20 , wherein the phase change filter is a notch filter, wherein a notch of the notch filter has a central frequency in a range of 900 nm to 1000 nm.

23. The phase change filter of claim 20 , wherein light wavelengths in the filtering range are attenuated by less than 20 percent when the phase change material dots are in a second state.

24. The phase change filter of claim 23 , wherein the first state is an amorphous state, and the second state is a crystalline state.

25. The phase change filter of claim 20 , wherein the pitch of the phase change material dots in one or more of the columns and rows is such that light wavelengths in an offset filtering range are attenuated by at least 40 percent to 60 percent when the phase change material dots are in a second state, wherein the offset filtering range is non-overlapping with the filtering range.

26. A method of fabricating a phase change filter, the method comprising:
forming a plurality of phase change material dots, each dot being formed of a phase change material, wherein the phase change material dots are formed in columns and rows of regular spacing, wherein a pitch of the phase change material dots in the columns and rows is in the range of 500 nm to 1000 nm.

Assignees

• St Microelectronics Crolles 2 Sas

Inventors

• Barlas Marios
• Shiianov Kirill
• Josse Emmanuel
• Monfray Stephane

Classifications

• H10F39/806 Primary

  Optical elements or arrangements associated with the image sensors · CPC title

• G02F2203/055

  wavelength filtering · CPC title

• G02F2203/11

  involving infrared radiation · CPC title

• G02F1/0147 Primary

  based on thermo-optic effects (G02F1/132 takes precedence) · CPC title