Tuning emission wavelengths of quantum emitters via a phase change material

Patent metadata

Field	Value
Publication number	US-11848400-B2
Application number	US-202117352880-A
Country	US
Kind code	B2
Filing date	Jun 21, 2021
Priority date	Jun 21, 2021
Publication date	Dec 19, 2023
Grant date	Dec 19, 2023

Abstract

A device having a layered structure that includes a layer of phase change material and a matrix material layer having embedding quantum emitters is tuned. An electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters. A phase of the phase change material is changed, in a non-volatile manner, in each of one or more of local areas of the phase change material, to form local alterations that are opposite to respective ones of the quantum emitters in the matrix material layer, to locally modify the electric field at the respective quantum emitters.

First claim

What is claimed is:

1. An emission device comprising:
a layered structure including a layer of phase change material and a matrix material layer embedding one or more quantum emitters, wherein the matrix material layer extends over the layer of phase change material;
two electrodes arranged on each side of the layered structure, so as to allow an electric field to be generated through the matrix material layer and the layer of phase change material, so as to change the emission wavelengths of the quantum emitters, in operation; and
a substrate, over which extends the layer of phase change material, so as for the layer of phase change material to be between the substrate and the matrix material layer,
wherein the layer of phase change material comprises one or more local areas that have a phase distinct from that of remaining portions of the layer of phase change material, thereby forming local phase alterations opposite to respective ones of the quantum emitters in the matrix material layer, so as to locally modify the electric field at the respective quantum emitters, in operation; and
wherein the electrodes are patterned on the substrate, so as for the layered structure to extend between the electrodes.

2. The emission device according to claim 1 , wherein
the phase change material comprises one of GeSbTe and HfO2.

3. The emission device according to claim 1 , wherein
the matrix material layer comprises one of a crystalline material and a polymer material; and
the quantum emitters comprise one of epitaxially-grown semiconductor quantum dots, colloidal quantum dots, and organic emitters.

4. The emission device according to claim 1 , wherein an average distance between the quantum emitters in the matrix material layer is larger than or equal to 50 nm.

5. The emission device according to claim 1 , wherein an average, in-plane dimension of said local areas is between 50 and 5000 nm, said average, in-plane dimension being measured along a direction that is parallel to an average plane of the matrix material layer.

6. The emission device according to claim 5 , wherein an average thickness of said local areas is larger than or equal to 1 nm, said thickness measured perpendicularly to the matrix material layer and from an interface between the matrix material layer and the layer of phase change material.

7. The emission device according to claim 1 , wherein an average thickness of the layer of phase change material is between 50 nm and 200 nm and an average thickness of the matrix material layer is between 20 nm and 200 nm.

8. The emission device according to claim 1 , wherein an average, static relative permittivity of said local areas is at least twice as large as an average, static relative permittivity of said remaining portions.

9. The emission device according to claim 1 , wherein one of the one or more local areas has a bowtie shape.

10. The emission device according to claim 9 , wherein the bowtie shape comprises two opposing triangular shapes and the corresponding quantum emitter is positioned therebetween.

11. The emission device according to claim 1 , wherein the substrate is an electrical insulator.

12. The emission device according to claim 1 , wherein the substrate does not emit light.

13. The emission device according to claim 1 , wherein the one or more local areas are in a crystalline phase and the remaining portions of the layer of phase change material are in an amorphous phase.

Assignees

• IBM

Inventors

• Stoeferle Thilo Hermann Curt
• Becker Michael A
• Mahrt Rainer F
• Urbonas Darius
• Scafirimuto Fabio

Classifications

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• G02F1/0147 Primary

  based on thermo-optic effects (G02F1/132 takes precedence) · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title