Flip-chip light emitting diode having connecting electrodes with multiple binding layers including eutectic system with tin

Patent metadata

Field	Value
Publication number	US-12439753-B2
Application number	US-202217664950-A
Country	US
Kind code	B2
Filing date	May 25, 2022
Priority date	Dec 10, 2019
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

A light-emitting device includes a carrier substrate, a flip-chip light-emitting diode (LED) mounted onto the carrier substrate, and an electrode unit disposed between the carrier substrate and the flip-chip LED. The electrode unit includes first and second connecting electrodes that have opposite conductivity. Each of the first and second connecting electrodes includes an intermediate metal layer and a binding layer that are sequentially disposed on the flip-chip LED in such order. The binding layer includes a first portion being adjacent to the carrier substrate and forming an eutectic system with tin, and a second portion located between the first portion and the intermediate metal layer.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a carrier substrate;
at least one flip-chip light-emitting diode (LED) which is mounted onto said carrier substrate; and
an electrode unit which is disposed between said carrier substrate and said flip-chip LED, and which includes a first connecting electrode and a second connecting electrode opposite in conductivity to said first connecting electrode,
wherein each of said first connecting electrode and said second connecting electrode includes an intermediate metal layer and a binding layer that are sequentially disposed on said flip-chip LED in such order, said binding layer including a first portion that is adjacent to said carrier substrate and that forms an eutectic system with tin, and a second portion that is located between said first portion and said intermediate metal layer,
wherein said second portion of said binding layer is made of a material free of tin, and
wherein for each of said first connecting electrode and said second connecting electrode, said intermediate metal layer includes a plurality of stress relieving sublayers, and at least one migration resisting sublayer, said at least one migration resisting sublayer being interposed between any two immediately adjacent ones of said plurality of stress relieving sublayers.

2. The light-emitting device of claim 1 , wherein for each of said first connecting electrode and said second connecting electrode, said second portion of said binding layer has a minimal thickness ranging from 50 nm to 300 nm.

3. The light-emitting device of claim 1 , wherein for each of said first connecting electrode and said second connecting electrode, said second portion of said binding layer includes nickel.

4. The light-emitting device of claim 1 , wherein for each of said first connecting electrode and said second connecting electrode, said eutectic system and said second portion of said binding layer are further disposed on a lateral surface of said intermediate metal layer.

5. The light-emitting device of claim 1 , wherein said carrier substrate is a packaging substrate.

6. The light-emitting device of claim 1 , wherein said carrier substrate is a circuit board.

7. The light-emitting device of claim 1 , wherein said carrier substrate is a flexible substrate.

8. The light-emitting device of claim 1 , wherein said at least one flip-chip LED is mounted onto said carrier substrate via a solder paste, and said solder paste is made of a material containing tin to form the eutectic system with said first portion of each of said first connecting electrode and said second connecting electrode.

9. A light-emitting device, comprising:
a carrier substrate;
at least one flip-chip light-emitting diode (LED) which is mounted onto said carrier substrate; and
an electrode unit which is disposed between said carrier substrate and said flip-chip LED, and which includes a first connecting electrode and a second connecting electrode opposite in conductivity to said first connecting electrode,
wherein each of said first connecting electrode and said second connecting electrode includes an intermediate metal layer and a binding layer that are sequentially disposed on said flip-chip LED in such order, said binding layer including a first portion that is adjacent to said carrier substrate and that forms an eutectic system with tin, and a second portion that is located between said first portion and said intermediate metal layer, and
wherein for each of said first connecting electrode and said second connecting electrode, said intermediate metal layer includes at least one functional sublayer selected from a stress relieving sublayer, a stress transition sublayer, and a reflective sublayer.

10. The light-emitting device of claim 9 , wherein for each of said first connecting electrode and said second connecting electrode, said intermediate metal layer includes said stress relieving sublayer which is made of a material selected from the group consisting of titanium, aluminum, copper, gold and combinations thereof.

11. The light-emitting device of claim 9 , wherein for each of said first connecting electrode and said second connecting electrode, said intermediate metal layer includes said stress relieving sublayer and said stress transition sublayer disposed between said stress relieving sublayer and said second portion.

12. The light-emitting device of claim 11 , wherein for each of said first connecting electrode and said second connecting electrode, said stress transition sublayer is made of one of titanium, chromium and a combination thereof.

13. The light-emitting device of claim 9 , wherein for each of said first connecting electrode and said second connecting electrode, said intermediate metal layer includes a plurality of stress relieving sublayers, a number of said stress relieving sublayers ranging from 3 to 5, each of said stress relieving sublayers having a thickness ranging from 100 nm to 500 nm.

14. A light-emitting device, comprising:
a carrier substrate;
at least one flip-chip light-emitting diode (LED) which is mounted onto said carrier substrate; and
an electrode unit which is disposed between said carrier substrate and said flip-chip LED, and which includes a first connecting electrode and a second connecting electrode opposite in conductivity to said first connecting electrode,
wherein each of said first connecting electrode and said second connecting electrode includes an intermediate metal layer and a binding layer that are sequentially disposed on said flip-chip LED in such order, said binding layer including a first portion that is adjacent to said carrier substrate and that forms an eutectic system with tin, and a second portion that is located between said first portion and said intermediate metal layer, and
wherein for each of said first connecting electrode and said second connecting electrode, said intermediate metal layer includes a plurality of stress relieving sublayers, and at least one migration resisting sublayer, said migration resisting sublayer being interposed between any two immediately adjacent ones of said stress relieving sublayers.

15. The light-emitting device of claim 14 , wherein for each of said first connecting electrode and said second connecting electrode, a ratio of a thickness of said migration resisting sublayer to a thickness of each of said stress relieving sublayers is not greater than 1:3.

16. The light-emitting device of claim 14 , wherein for each of said first connecting electrode and said second connecting electrode, said migration resisting sublayer is made of one of titanium and chromium.

17. The light-emitting device of claim 14 , wherein for each of said first connecting electrode and said second connecting electrode, each of said stress relieving sublayers is made of Al, and said at least one migration resisting sublayer is made of Ti.

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Liu Shiwei
• Zheng Gaolin
• He Anhe
• Wang Qing
• Lin Su-Hui
• Peng Kang-Wei
• Hong ling-yuan
• Zeng Jiangbin

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title

• H10W72/07255

  changes in materials · CPC title

• H10W72/07236

  Soldering or alloying · CPC title

• H10W72/2524

  Eutectic alloys · CPC title