Display device

Patent metadata

Field	Value
Publication number	US-12439697-B2
Application number	US-202418610416-A
Country	US
Kind code	B2
Filing date	Mar 20, 2024
Priority date	Dec 1, 2020
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

A display device according to an embodiment includes a light blocking layer disposed on a substrate; an oxygen supply layer disposed on and contacting the light blocking layer; a semiconductor layer disposed on the oxygen supply layer; and a light emitting diode electrically connected with the semiconductor layer. The semiconductor layer includes an oxide semiconductor, and the oxygen supply layer includes a metal oxide that includes at least one of indium, zinc, gallium, and tin.

First claim

What is claimed is:

1. A display device comprising:
a light blocking layer disposed on a substrate;
an oxygen supply layer disposed on and contacting the light blocking layer; and
a semiconductor layer disposed on the oxygen supply layer; wherein
the semiconductor layer comprises an oxide semiconductor, and
the oxygen supply layer includes a metal oxide that includes at least one of indium, zinc, gallium, and tin, wherein a thickness of the oxygen supply layer is in a range of about 30% to about 50% of a thickness of the semiconductor layer.

2. The display device of claim 1 , further comprising:
a light emitting diode electrically connected with the semiconductor layer.

3. The display device of claim 1 , wherein the oxygen supply layer and the semiconductor layer comprise a same material.

4. The display device of claim 1 , wherein the oxygen supply layer and the light blocking layer have a same planar shape.

5. The display device of claim 1 , wherein a planar shape of the oxygen supply layer is different from a planar shape of the light blocking layer.

6. The display device of claim 1 , wherein at least a part of the light blocking layer does not overlap the oxygen supply layer in a direction that is perpendicular to a surface of the substrate.

7. The display device of claim 1 , further comprising:
a gate insulating layer disposed on the semiconductor layer; and
a gate electrode disposed on the gate insulating layer.

8. The display device of claim 1 , wherein the semiconductor layer and the oxygen supply layer comprise an IGZO.

9. A display device comprising:
a light blocking layer disposed on a substrate;
a first oxygen supply layer disposed on and contacting the light blocking layer;
a semiconductor layer disposed on the first oxygen supply layer;
a gate insulating layer disposed on the semiconductor layer;
a second oxygen supply layer disposed on the gate insulating layer; and
a gate electrode disposed on the second oxygen supply layer; wherein
the semiconductor layer comprises an oxide semiconductor,
the first oxygen supply layer and the second oxygen supply layer comprise a metal oxide that includes at least one of indium, zinc, gallium, and tin, and
a thickness of the first oxygen supply layer and a thickness of the second oxygen supply layer are in a range of about 30% to about 50% of a thickness of the semiconductor layer.

10. The display device of claim 9 , further comprising:
a light emitting diode electrically connected with the semiconductor layer.

11. The display device of claim 9 , wherein the second oxygen supply layer and the gate electrode have a same planar shape.

12. The display device of claim 9 , wherein the first oxygen supply layer, the second oxygen supply layer, and the semiconductor layer comprise a same material.

13. The display device of claim 9 , wherein the first oxygen supply layer and the light blocking layer have the same planar shape.

14. The display device of claim 9 , wherein a planar shape of the first oxygen supply layer is different from a planar shape of the light blocking layer.

15. The display device of claim 9 , wherein at least a part of the light blocking layer does not overlap the first oxygen supply layer in a direction that is perpendicular to a surface of the substrate.

16. The display device of claim 9 , wherein the semiconductor layer, the first oxygen supply layer, and the second oxygen supply layer comprise an IGZO.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Hyung Jun
• Koo So Young
• Kim Eok Su
• Nam Yun Yong
• Lim Jun Hyung
• Jeon Kyung Jin

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W74/43 Primary

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title